Efficient coupling from the silicon waveguide to the GeSi layer is the key to success in the GeSi electro-absorption （EA） modulator based on evanescent coupling. A lateral taper in the upper GeSi layer has room for ...Efficient coupling from the silicon waveguide to the GeSi layer is the key to success in the GeSi electro-absorption （EA） modulator based on evanescent coupling. A lateral taper in the upper GeSi layer has room for increasing the modulating efficiency and alleviating the sensitivity of the extinction ratio （ER） and insertion loss （IL） to the length of the active region. The light behavior and the effect of the taper are explored in detail using the beam propagation method （BPM）. After optimization, the light can nearly be totally confined in the GeSi layer without any oscillation. The modulator with the designed taper can achieve low IL and high ER.展开更多
We report experimental realization of Raman spectra enhancement of copper phthalocyanine, using an on-chip metallic planar waveguide of the sub-millimeter scale. The oscillating ultrahigh order modes excited by the di...We report experimental realization of Raman spectra enhancement of copper phthalocyanine, using an on-chip metallic planar waveguide of the sub-millimeter scale. The oscillating ultrahigh order modes excited by the direct coupling method yield high optical intensity at resonance, which is different from the conventional strategy to create localized ＂hot spots.＂ The observed excitation efficiency of the Raman signal is significantly enhanced,owing to the high Q factor of the resonant cavity. Furthermore, effective modulation of the Raman intensity is available by adjusting the polymethyl methacrylate（PMMA） thickness in the guiding layer, i.e., by tuning the light–matter interaction length. A large modulation depth is verified through the fact that 10 times variation in the enhancement factor is observed in the experiment as the PMMA thickness varies from 7 to 23 μm.展开更多
In this paper, a substrate removing technique in a silicon Mach–Zehnder modulator(MZM) is proposed and demonstrated to improve modulation bandwidth. Based on the novel and optimized traveling wave electrodes,the elec...In this paper, a substrate removing technique in a silicon Mach–Zehnder modulator(MZM) is proposed and demonstrated to improve modulation bandwidth. Based on the novel and optimized traveling wave electrodes,the electrode transmission loss is reduced, and the electro-optical group index and 50 Ω impedance matching are improved, simultaneously. A 2 mm long substrate removed silicon MZM with the measured and extrapolated 3 dB electro-optical bandwidth of >50 GHz and 60 GHz at the-8 V bias voltage is designed and fabricated.Open optical eye diagrams of up to 90 GBaud∕s NRZ and 56 GBaud∕s four-level pulse amplitude modulation(PAM-4) are experimentally obtained without additional optical or digital compensations. Based on this silicon MZM, the performance in a short-reach transmission system is further investigated. Single-lane 112 Gb∕s and 128 Gb∕s transmissions over different distances of 1 km, 2 km, and 10 km are experimentally achieved based on this high-speed silicon MZM.展开更多
This Letter introduces the design and simulation of a microstrip-line-based electro-optic （EO） polymer optical phase modulator （PM） that is further enhanced by the addition of photonic crystal （PhC） structures t...This Letter introduces the design and simulation of a microstrip-line-based electro-optic （EO） polymer optical phase modulator （PM） that is further enhanced by the addition of photonic crystal （PhC） structures that are in close proximity to the optical core. The slow-wave PhC structure is designed for two different material configurations and placed in the modulator as a superstrate to the optical core; simulation results are depicted for both 1D and 2D PhC structures. The PM characteristics are modeled using a combination of the finite element method and the optical beam propagation method in both the RF and optical domains, respectively. The phase-shift simulation results show a factor of 1.7 increase in an effective EO coefficient （120 pm/V） while maintaining a broadband bandwidth of 40 GHz.展开更多
文摘Efficient coupling from the silicon waveguide to the GeSi layer is the key to success in the GeSi electro-absorption （EA） modulator based on evanescent coupling. A lateral taper in the upper GeSi layer has room for increasing the modulating efficiency and alleviating the sensitivity of the extinction ratio （ER） and insertion loss （IL） to the length of the active region. The light behavior and the effect of the taper are explored in detail using the beam propagation method （BPM）. After optimization, the light can nearly be totally confined in the GeSi layer without any oscillation. The modulator with the designed taper can achieve low IL and high ER.
基金supported by the Natural Science Foundation of Jiangsu Province(Nos.BK20140246 and BK20160417)the National Natural Science Foundation of China(No.61371057,61601251,11404092,and61701261)+1 种基金the China Postdoctoral Science Foundation Funded Project(No.2016M601586)the Fundamental Research Funds for the Central Universities(No.2017B14914)
文摘We report experimental realization of Raman spectra enhancement of copper phthalocyanine, using an on-chip metallic planar waveguide of the sub-millimeter scale. The oscillating ultrahigh order modes excited by the direct coupling method yield high optical intensity at resonance, which is different from the conventional strategy to create localized ＂hot spots.＂ The observed excitation efficiency of the Raman signal is significantly enhanced,owing to the high Q factor of the resonant cavity. Furthermore, effective modulation of the Raman intensity is available by adjusting the polymethyl methacrylate（PMMA） thickness in the guiding layer, i.e., by tuning the light–matter interaction length. A large modulation depth is verified through the fact that 10 times variation in the enhancement factor is observed in the experiment as the PMMA thickness varies from 7 to 23 μm.
文摘In this paper, a substrate removing technique in a silicon Mach–Zehnder modulator(MZM) is proposed and demonstrated to improve modulation bandwidth. Based on the novel and optimized traveling wave electrodes,the electrode transmission loss is reduced, and the electro-optical group index and 50 Ω impedance matching are improved, simultaneously. A 2 mm long substrate removed silicon MZM with the measured and extrapolated 3 dB electro-optical bandwidth of >50 GHz and 60 GHz at the-8 V bias voltage is designed and fabricated.Open optical eye diagrams of up to 90 GBaud∕s NRZ and 56 GBaud∕s four-level pulse amplitude modulation(PAM-4) are experimentally obtained without additional optical or digital compensations. Based on this silicon MZM, the performance in a short-reach transmission system is further investigated. Single-lane 112 Gb∕s and 128 Gb∕s transmissions over different distances of 1 km, 2 km, and 10 km are experimentally achieved based on this high-speed silicon MZM.
文摘This Letter introduces the design and simulation of a microstrip-line-based electro-optic （EO） polymer optical phase modulator （PM） that is further enhanced by the addition of photonic crystal （PhC） structures that are in close proximity to the optical core. The slow-wave PhC structure is designed for two different material configurations and placed in the modulator as a superstrate to the optical core; simulation results are depicted for both 1D and 2D PhC structures. The PM characteristics are modeled using a combination of the finite element method and the optical beam propagation method in both the RF and optical domains, respectively. The phase-shift simulation results show a factor of 1.7 increase in an effective EO coefficient （120 pm/V） while maintaining a broadband bandwidth of 40 GHz.
