The method and procedure of realizing parameter statistical correlation analysis ofbipolar analog IC’s are given,and the statistical model of parameter are constructed with doubleparameters(B_F,R_S).Based on the comp...The method and procedure of realizing parameter statistical correlation analysis ofbipolar analog IC’s are given,and the statistical model of parameter are constructed with doubleparameters(B_F,R_S).Based on the comparison and analysis of the circuit characteristics,it isshown that the method can be used for analysis and design of bipolar IC’s.展开更多
Techniques for constructing metamodels of device parameters at BSIM3v3 level accuracy are presented to improve knowledge-based circuit sizing optimization. Based on the analysis of the prediction error of analytical p...Techniques for constructing metamodels of device parameters at BSIM3v3 level accuracy are presented to improve knowledge-based circuit sizing optimization. Based on the analysis of the prediction error of analytical performance expressions, operating point driven (OPD) metamodels of MOSFETs are introduced to capture the circuit's characteristics precisely. In the algorithm of metamodel construction, radial basis functions are adopted to interpolate the scattered multivariate data obtained from a well tailored data sampling scheme designed for MOSFETs. The OPD metamodels can be used to automatically bias the circuit at a specific DC operating point. Analytical-based performance expressions composed by the OPD metamodels show obvious improvement for most small-signal performances compared with simulation-based models. Both operating-point variables and transistor dimensions can be optimized in our nesting-loop optimization formulation to maximize design flexibility. The method is successfully applied to a low-voltage low-power amplifier.展开更多
文摘The method and procedure of realizing parameter statistical correlation analysis ofbipolar analog IC’s are given,and the statistical model of parameter are constructed with doubleparameters(B_F,R_S).Based on the comparison and analysis of the circuit characteristics,it isshown that the method can be used for analysis and design of bipolar IC’s.
文摘Techniques for constructing metamodels of device parameters at BSIM3v3 level accuracy are presented to improve knowledge-based circuit sizing optimization. Based on the analysis of the prediction error of analytical performance expressions, operating point driven (OPD) metamodels of MOSFETs are introduced to capture the circuit's characteristics precisely. In the algorithm of metamodel construction, radial basis functions are adopted to interpolate the scattered multivariate data obtained from a well tailored data sampling scheme designed for MOSFETs. The OPD metamodels can be used to automatically bias the circuit at a specific DC operating point. Analytical-based performance expressions composed by the OPD metamodels show obvious improvement for most small-signal performances compared with simulation-based models. Both operating-point variables and transistor dimensions can be optimized in our nesting-loop optimization formulation to maximize design flexibility. The method is successfully applied to a low-voltage low-power amplifier.
基金supported by the National Natural Science Foundation of China (No. 61474081)Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology (No. DH201513)