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ANTI-PLANE SHEAR CRACK IN A FUNCTIONALLY GRADIENT PIEZOELECTRIC MATERIAL 被引量:2
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作者 Hu Keqiang Zhong Zheng Jin Bo 《Acta Mechanica Solida Sinica》 SCIE EI 2002年第2期140-148,共9页
The main objective of this paper is to study the singular natureof the crack-tip stress and electric displacement field in afunctionally gradient piezoelectric medium having materialcoefficients with a discontinuous d... The main objective of this paper is to study the singular natureof the crack-tip stress and electric displacement field in afunctionally gradient piezoelectric medium having materialcoefficients with a discontinuous derivative. The problem isconsidered for the simplest possible loading and geometry, namely,the anti-plane shear stress and electric displacement in -plane oftwo bonded half spaces in which the crack is parallel to theinterface. 展开更多
关键词 functionally gradient material piezoelectric material stress intensityfactors electric dis- placement intensity factors
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Fracture mechanics analysis on Smart-Cut~ technology.Part 1:Effects of stiffening wafer and defect interaction 被引量:3
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作者 Bin Gu Hongyuan Liu +2 位作者 Yiu-Wing Mai Xi Qiao Feng Shou Wen Yu 《Acta Mechanica Sinica》 SCIE EI CAS CSCD 2009年第1期73-81,共9页
In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator (SOI)... In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator (SOI) wafers of high uniformity in thickness. Using integral transform and Cauchy singular integral equation methods, the mode-I and mode-II stress intensity factors, energy release rate, and crack opening displacements are derived in order to examine several important fracture mechanisms involved in the Smart-Cut process. The effects of defect interaction and stiffening wafer on defect growth are investigated. The numerical results indi- cate that a stiffener/handle wafer can effectively prevent the donor wafer from blistering and exfoliation, but it slows down the defect growth by decreasing the magnitudes of SIF's. Defect interaction also plays an important role in the splitting process of SOI wafers, but its contribution depends strongly on the size, interval and internal pressure of defects. Finally, an analytical formula is derived to estimate the implantation dose required for splitting a SOI wafer. 展开更多
关键词 Smart-Cut technology Silicon-on-insulatorwafer Crack growth Fracture mechanics Stress intensityfactor
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Interaction Between Crack and Elastic Inclusion 被引量:1
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作者 张明焕 汤任基 《Applied Mathematics and Mechanics(English Edition)》 SCIE EI 1995年第4期307-318,共12页
By using the basic displacements and stresses caused by a single elastic inclusionand a single crack on infinite plane,the interaction problem between a crack and anelastic inclusion is reduced io solve a set of Cauch... By using the basic displacements and stresses caused by a single elastic inclusionand a single crack on infinite plane,the interaction problem between a crack and anelastic inclusion is reduced io solve a set of Cauchy-type singular integral equation.Based on this result,the singular behaviour of the solution for the inclusion-branchingcrack is analysed theoretically and the oscillating singular interface stress field isobtained. For the separating inclusion-crack problem,the stress intensity factors at thetips and the interface stress of the inclusion are calculated and the results of which aresatisfactory. 展开更多
关键词 inclusion and crack inclusion-branching crack stress intensityfactor interface stress
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Heat Conduction in Multilayered Thermoelectric Materials with Multiple Cracks 被引量:5
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作者 Shenghu Ding Yueting Zhou 《Acta Mechanica Solida Sinica》 SCIE EI CSCD 2018年第4期512-522,共11页
Multilayer thin-film thermoelectric materials are of technological importance. This paper describes a method to analyze the heat conduction in a multilayered thermoelectric plate containing some non-collinear cracks. ... Multilayer thin-film thermoelectric materials are of technological importance. This paper describes a method to analyze the heat conduction in a multilayered thermoelectric plate containing some non-collinear cracks. The material properties in one layer may be different from those in another even though each layer may still be homogeneous. Using the Fourier integral transforms, the boundary value problem is reduced to a system of general singular integral equations. The model is sufficiently general to account for any number of layers and any number of cracks. As a numerical illustration, the electric flux intensity factor, energy flux intensity factor and thermal flux intensity factor for a three-layer plate specimen with two cracks are presented. The effects of strip width on the electric flux intensity factor and thermal flux intensity factor are studied. 展开更多
关键词 MULTILAYER Thermoelectric materials CRACK Singular integral equation intensityfactors
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