Left-handedness with three zero-absorption windows is achieved in a triple-quantum-dot system. With the typ- ical parameters of a GaAs/AlGaAs heterostructure, the simultaneous negative relative electric permittivity a...Left-handedness with three zero-absorption windows is achieved in a triple-quantum-dot system. With the typ- ical parameters of a GaAs/AlGaAs heterostructure, the simultaneous negative relative electric permittivity and magnetic permeability are obtained by the adjustable incoherent pumping field and two inter-dot tunnelings. Furthermore, three zero-absorption windows in the left-handedness frequency bands are observed. The left- handedness with zero-absorption in the solid state heterostrueture may solve the challenges not only in the left-handed materials achieved by the photonic resonant scheme but also in the application of negative refractive materials with a large amount of absorption.展开更多
Based on the Green＇s function technique and the equation of motion approach, this paper theoretically studies the thermoelectric effect in parallel coupled double quantum dots （DQDs）, in which Rashba spin-orbit int...Based on the Green＇s function technique and the equation of motion approach, this paper theoretically studies the thermoelectric effect in parallel coupled double quantum dots （DQDs）, in which Rashba spin-orbit interaction is taken into account. Rashba spin^rbit interaction contributions, even in a magnetic field, are exhibited obviously in the double quantum dots system for the thermoelectric effect. The periodic oscillation of thermopower can be controlled by tunning the Rashba spin^rbit interaction induced phase. The interesting spin-dependent thermoelectric effects will arise which has important influence on thermoelectric properties of the studied system.展开更多
This paper presents the temperature dependence measurements characterisation of several InAs/GaAs quantum dots （QDs） solar cell devices. The devices with cylindrical geometry were fabricated and characterised on-waf...This paper presents the temperature dependence measurements characterisation of several InAs/GaAs quantum dots （QDs） solar cell devices. The devices with cylindrical geometry were fabricated and characterised on-wafer under 20 suns in a temperature range from 300°K to 430°K. The temperature dependence parameters such as open circuit voltage, short circuit density current, fill factor and efficiency are studied in detail. The increase of temperature produces an enhancement of the short circuit current. However, the open circuit voltage is degraded because the temperature increases the recombination phenomena involved, as well as reducing the effective band gap of the semiconductor.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61205205the Foundation for Personnel Training Projects of Yunnan Province under Grant No KKSY201207068
文摘Left-handedness with three zero-absorption windows is achieved in a triple-quantum-dot system. With the typ- ical parameters of a GaAs/AlGaAs heterostructure, the simultaneous negative relative electric permittivity and magnetic permeability are obtained by the adjustable incoherent pumping field and two inter-dot tunnelings. Furthermore, three zero-absorption windows in the left-handedness frequency bands are observed. The left- handedness with zero-absorption in the solid state heterostrueture may solve the challenges not only in the left-handed materials achieved by the photonic resonant scheme but also in the application of negative refractive materials with a large amount of absorption.
基金supported by the Scientific Research Fund of Heilongjiang Provincial Education Department of China (GrantNo. 11551145)
文摘Based on the Green＇s function technique and the equation of motion approach, this paper theoretically studies the thermoelectric effect in parallel coupled double quantum dots （DQDs）, in which Rashba spin-orbit interaction is taken into account. Rashba spin^rbit interaction contributions, even in a magnetic field, are exhibited obviously in the double quantum dots system for the thermoelectric effect. The periodic oscillation of thermopower can be controlled by tunning the Rashba spin^rbit interaction induced phase. The interesting spin-dependent thermoelectric effects will arise which has important influence on thermoelectric properties of the studied system.
文摘This paper presents the temperature dependence measurements characterisation of several InAs/GaAs quantum dots （QDs） solar cell devices. The devices with cylindrical geometry were fabricated and characterised on-wafer under 20 suns in a temperature range from 300°K to 430°K. The temperature dependence parameters such as open circuit voltage, short circuit density current, fill factor and efficiency are studied in detail. The increase of temperature produces an enhancement of the short circuit current. However, the open circuit voltage is degraded because the temperature increases the recombination phenomena involved, as well as reducing the effective band gap of the semiconductor.
