We report on a long wavelength interband cascade photodetector with type Ⅱ InAs/GaSb superlattice absorber.The device is a three-stage interband cascade structure.At 77 K,the 50%cutoff wavelength of the detector is 8...We report on a long wavelength interband cascade photodetector with type Ⅱ InAs/GaSb superlattice absorber.The device is a three-stage interband cascade structure.At 77 K,the 50%cutoff wavelength of the detector is 8.48μm and the peak photoresponse wavelength is 7.78μm.The peak responsivity is 0.93 A/W and the detectivity D*is 1.12×10^(11)cm·Hz0.5/W for 7.78μm at-0.20 V.The detector can operate up to about 260 K.At 260 K,the 50%cutoff wavelength is 11.52μm,the peak responsivity is 0.78 A/W and the D*is 5.02×10^(8)cm·Hz0.5/W for the peak wavelength of 10.39μm at-2.75 V.The dark current of the device is dominated by the diffusion current under both a small bias voltage of-0.2 V and a large one of-2.75 V for the temperature range of 120 to 260 K.展开更多
The investigation of the interband type-II superlattice In As/Ga Sb cascade photodetector in the temperature range of 320–380 K is presented. The article is devoted to the theoretical modeling of the cascade detector...The investigation of the interband type-II superlattice In As/Ga Sb cascade photodetector in the temperature range of 320–380 K is presented. The article is devoted to the theoretical modeling of the cascade detector characteristics by the use of the Simu Apsys platform and the 4-band model（k·p 8 × 8 method）. The obtained theoretical characteristics are comparable with experimentally measured ones, suggesting that transport in the absorber is determined by the dynamics of intrinsic carriers and by their lifetime. An overlap equal to 120 me V was used in calculations and a correction term in the ＂non-common atom＂ model Hxy = 700 me V was added to the Hamiltonian. The electron and hole effective masses from dispersion curves were estimated and absorption coefficient α was calculated. Based on the simulation detectivity, D＊ characteristics in the temperature range 320–380 K were calculated. The simulated theoretical characteristics at 320 K are comparable to experimentally measured ones, however at higher temperatures, the experimental value of D＊ does not reach the theoretical values due to the low resistance of the device and short diffusion length.展开更多
基金supported in part by China’s NSF Program 61874103
文摘We report on a long wavelength interband cascade photodetector with type Ⅱ InAs/GaSb superlattice absorber.The device is a three-stage interband cascade structure.At 77 K,the 50%cutoff wavelength of the detector is 8.48μm and the peak photoresponse wavelength is 7.78μm.The peak responsivity is 0.93 A/W and the detectivity D*is 1.12×10^(11)cm·Hz0.5/W for 7.78μm at-0.20 V.The detector can operate up to about 260 K.At 260 K,the 50%cutoff wavelength is 11.52μm,the peak responsivity is 0.78 A/W and the D*is 5.02×10^(8)cm·Hz0.5/W for the peak wavelength of 10.39μm at-2.75 V.The dark current of the device is dominated by the diffusion current under both a small bias voltage of-0.2 V and a large one of-2.75 V for the temperature range of 120 to 260 K.
基金supported by the Polish National Science Centre(No.OPUS/UMO-2015/19/B/ST7/02200)
文摘The investigation of the interband type-II superlattice In As/Ga Sb cascade photodetector in the temperature range of 320–380 K is presented. The article is devoted to the theoretical modeling of the cascade detector characteristics by the use of the Simu Apsys platform and the 4-band model（k·p 8 × 8 method）. The obtained theoretical characteristics are comparable with experimentally measured ones, suggesting that transport in the absorber is determined by the dynamics of intrinsic carriers and by their lifetime. An overlap equal to 120 me V was used in calculations and a correction term in the ＂non-common atom＂ model Hxy = 700 me V was added to the Hamiltonian. The electron and hole effective masses from dispersion curves were estimated and absorption coefficient α was calculated. Based on the simulation detectivity, D＊ characteristics in the temperature range 320–380 K were calculated. The simulated theoretical characteristics at 320 K are comparable to experimentally measured ones, however at higher temperatures, the experimental value of D＊ does not reach the theoretical values due to the low resistance of the device and short diffusion length.
