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Long wavelength interband cascade photodetector with type Ⅱ InAs/GaSb superlattice absorber
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作者 Shaolong Yan Jianliang Huang +2 位作者 Ting Xue Yanhua Zhang Wenquan Ma 《Journal of Semiconductors》 EI CAS CSCD 2023年第4期81-85,共5页
We report on a long wavelength interband cascade photodetector with type Ⅱ InAs/GaSb superlattice absorber.The device is a three-stage interband cascade structure.At 77 K,the 50%cutoff wavelength of the detector is 8... We report on a long wavelength interband cascade photodetector with type Ⅱ InAs/GaSb superlattice absorber.The device is a three-stage interband cascade structure.At 77 K,the 50%cutoff wavelength of the detector is 8.48μm and the peak photoresponse wavelength is 7.78μm.The peak responsivity is 0.93 A/W and the detectivity D*is 1.12×10^(11)cm·Hz0.5/W for 7.78μm at-0.20 V.The detector can operate up to about 260 K.At 260 K,the 50%cutoff wavelength is 11.52μm,the peak responsivity is 0.78 A/W and the D*is 5.02×10^(8)cm·Hz0.5/W for the peak wavelength of 10.39μm at-2.75 V.The dark current of the device is dominated by the diffusion current under both a small bias voltage of-0.2 V and a large one of-2.75 V for the temperature range of 120 to 260 K. 展开更多
关键词 interband cascade infrared photodetector type II superlattices long wavelength
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Relative Chronology in High-Grade Crystalline Terrain of the Eastern Ghats, India: New Insights 被引量:1
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作者 Samarendra Bhattacharya Rajib Kar +1 位作者 Amit Kumar Saw Prasanta Das 《International Journal of Geosciences》 2011年第4期398-405,共8页
The two major lithology or gneiss components in the polycyclic granulite terrain of the Eastern Ghats, India, are the supracrustal rocks, commonly described as khondalites, and the charnockite-gneiss. Northern Eastern... The two major lithology or gneiss components in the polycyclic granulite terrain of the Eastern Ghats, India, are the supracrustal rocks, commonly described as khondalites, and the charnockite-gneiss. Northern Eastern Ghats belt, north of the Godavari rift has been defined as the Eastern Ghats Province, while that to the south has been defined as the Ongole domain;and although, these distinct crustal domains also record different ages of granulite metamorphism, both of these domains are dominated by the two lithologies. Many of the workers considered the khondalites as the oldest component with unknown basement and the charnockite- protoliths as intrusive into the khondalites. However, published geochronological data do not corroborate the aforesaid relations. Onset of khondalite sedimentation in the Proterozoic Eastern Ghats Province, constrained by detrital zircon data, as around 1.3 Ga and the charnockite-protolith emplacement between 1.9 and 2.9 Ga, argue against intrusion of felsic magma (tonalite, now enderbite!) in to the khondalites. The field relations of the hornblende-mafic granulite with the two gneiss components together with Sm-Nd isotopic data of the hornblende-mafic granulites (both the xenoliths within charnockites and those interbanded with the khondalites) indicate that khondalite sediments were deposited on older mafic crustal rocks. Mafic basement and supracrustal rocks were subsequently deformed and metamorphosed together during collisional orogeny at high to ultra-high temperatures – partial melting of mafic rocks producing the charnockitic melt;and partial melting of pelitic sediments producing the peraluminous granitoids. This is compatible with all the geochronological data as well as the petrogenetic model of partial melting for the charnockitic rocks in the Eastern Ghats Belt. The Ongole domain, south of the Godavari rift, though, is distinct in terms of the age of first/ earliest UHT metamorphism, but here too the charnockite-protoliths are older mafic rocks evidently not intrusive in to the khondalites. 展开更多
关键词 Hornblende-Mafic GRANULITE XENOLITH interbanded MAFIC Basement Partial Melting.
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Visible-Light Excitated Photocatalytic Activity of Rare Earth Metal-Ion-Doped Titania 被引量:5
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作者 谢一兵 李萍 袁春伟 《Journal of Rare Earths》 SCIE EI CAS CSCD 2002年第6期619-625,共7页
The rare earth ion Ce 4+ doped TiO 2 was prepared by sol-gel method. The average particle sizes are about 10 nm for sol phase and 55 nm for polycrystalline phase. The photocatalytic activities to degrade Reactive ... The rare earth ion Ce 4+ doped TiO 2 was prepared by sol-gel method. The average particle sizes are about 10 nm for sol phase and 55 nm for polycrystalline phase. The photocatalytic activities to degrade Reactive Brilliant Red Dye X-3B were investigated. The result reveals that the spectrum response of Ce 4+-TiO 2 has extended to visible region from the UV region(λ<387 nm) of pure TiO 2. Amorphous phase Ce 4+-TiO 2 sol with an electron scavenger (1.0% atom fraction Ce 4+ ion doping amount) shows the capability of the photocatalytic degradation of the dye X-3B as well as the nanocrystallite Ce 4+-TiO 2 with an interband trap site. Despite of the difference in the morphology of Ce 4+-TiO 2 photocatalyst, there is no apparent difference in respect of the decoloring effects. Whereas, polycrystalline phase Ce 4+-TiO 2 exhibits strong photomineralization power in comparison with the amorphous phase. The photocatalytic oxidation mechanisms of the dye molecule mainly involved in the self-photo-sensitization photolysis process by the first excited singlet oxygen ( 1O 2) and photocatalysis process by hydroxyl radicals(·OH) under visible light irradiation. 展开更多
关键词 rare earths amorphous phase polycrystalline phase photocatalysis process self-photo-sensitization photolysis interband trap site electron scavenger
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Theoretical investigation on near-infrared and visible absorption spectra of nanometallic aluminium with oxide coating in nanoenergetic materials:size and shape effects 被引量:1
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作者 彭亚晶 张淑平 +1 位作者 王英惠 杨延强 《Chinese Physics B》 SCIE EI CAS CSCD 2008年第9期3505-3511,共7页
The effects of metal core dimension, oxide shell thickness and ellipsoid aspect ratio of Al-Al2O3 core-shell nanoparticles on the near-infrared and visible absorption spectra of nanocomposite Al-Al2O3/nitrocellulose... The effects of metal core dimension, oxide shell thickness and ellipsoid aspect ratio of Al-Al2O3 core-shell nanoparticles on the near-infrared and visible absorption spectra of nanocomposite Al-Al2O3/nitrocellulose(NC) film are investigated by numerical calculations. Both the size-dependent interband transitions and frequency-dependent free electron damping of the nanometallic aluminium are taken into account in the calculations. Oxidation effect of nanoaluminium is also analysed. It is shown that oxidation may enhance but may also reduce the optical absorption, depending on the excited light energy and initial dimension of nanoparticle. Metal core size and excited light energy dominate the absorption characteristic. The absorption ability of ellipsoidal nanoparticles is larger than that of spheroidal nanoparticles and increases by the square index as the aspect ratio increases. These calculations will provide some significant theoretical guidance for the preparation and laser ignition of nanoenergetic materials. 展开更多
关键词 core-shell nanoparticle optical absorption interband transition nanoenergetic material
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Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm 被引量:1
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作者 Yi Zhang Fu-Hui Shao +8 位作者 Cheng-Ao Yang Sheng-Wen Xie Shu-Shan Huang Ye Yuan Jin-Ming Shang Yu Zhang Ying-Qiang Xu Hai-Qiao Ni Zhi-Chuan Niu 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第12期311-314,共4页
We report a type-Ⅱ GaSb-based interband cascade laser operating a continuous wave at room temperature. The cascade region of interband cascade laser was designed using the ‘W' configuration of the active quantum... We report a type-Ⅱ GaSb-based interband cascade laser operating a continuous wave at room temperature. The cascade region of interband cascade laser was designed using the ‘W' configuration of the active quantum wells and the ‘Carrier Rebalancing' method in the electron injector. The devices were processed into narrow ridges and mounted epitaxial side down on a copper heat sink. The 25-μm-wide, 3-mm-long ridge without coated facets generated 41.4 mW of continuous wave output power at T = 15℃. And a low threshold current density of 267 A/cm^2 is achieved. The emission wavelength of the ICL is 3452.3 nm at 0.5 A. 展开更多
关键词 interband cascade laser MID-INFRARED GaSb-based type-Ⅱ W quantum well
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Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well 被引量:1
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作者 Ling Sun Lu Wang +7 位作者 Jin-Lei Lu Jie Liu Jun Fang Li-Li Xie Zhi-Biao Hao Hai-Qiang Jia Wen-Xin Wang Hong Chen 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第4期396-400,共5页
Here in this paper,we report a room-temperature operating infrared photodetector based on the interband transition of an In As Sb/Ga Sb quantum well.The interband transition energy of 5-nm thick In As(0.91)Sb(0.09... Here in this paper,we report a room-temperature operating infrared photodetector based on the interband transition of an In As Sb/Ga Sb quantum well.The interband transition energy of 5-nm thick In As(0.91)Sb(0.09) embedded in the Ga Sb barrier is calculated to be 0.53 e V(2.35μm),which makes the absorption range of In As Sb cover an entire range from short-wavelength infrared to long-wavelength infrared spectrum.The fabricated photodetector exhibits a narrow response range from 2.0μm to 2.3μm with a peak around 2.1μm at 300 K.The peak responsivity is 0.4 A/W under-500-m Vapplied bias voltage,corresponding to a peak quantum efficiency of 23.8%in the case without any anti-reflection coating.At 300 K,the photodetector exhibits a dark current density of 6.05×10^-3A/cm^2 under-400-m V applied bias voltage and 3.25×10^-5A/cm^2 under zero,separately.The peak detectivity is 6.91×10^10cm·Hz^1/2/W under zero bias voltage at 300 K. 展开更多
关键词 InAsSb/GaSb quantum well interband transition PHOTODETECTOR room temperature operating
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Influence of intraband motion on the interband excitation and high harmonic generation
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作者 Rui-Xin Zuo Xiao-Hong Song +2 位作者 Xi-Wang Liu Shi-Dong Yang Wei-Feng Yang 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第9期9-15,共7页
Tunnelling, acceleration, and collision of electrons are the basic events in the process of high harmonic generation(HHG) in strong-field interaction with atoms.However, the periodic array of atoms in semiconductor st... Tunnelling, acceleration, and collision of electrons are the basic events in the process of high harmonic generation(HHG) in strong-field interaction with atoms.However, the periodic array of atoms in semiconductor structure makes three steps become interatomic coherent process which leads to complicated carrier dynamics and two sources of high harmonic emission: interband polarization and intraband current.The difference of features of high harmonic generation between semiconductors and atoms is strongly linked to the unique presence of intraband motion which manifests itself a nontrivial role in intertwined two dynamics.Here, we review recent experimental and theoretical advances of understanding coupled interband and intraband mechanisms of HHG in semiconductors.Particularly we focus on the influence of intraband motion on the interband excitation, and on the subsequent HHG emission and attosecond pulse generation. 展开更多
关键词 high HARMONIC GENERATION interband POLARIZATION intraband current ATTOSECOND PULSE GENERATION
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A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector
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作者 Xuan-Zhang Li Ling Sun +7 位作者 Jin-Lei Lu Jie Liu Chen Yue Li-Li Xie Wen-Xin Wang Hong Chen Hai-Qiang Jia Lu Wang 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第3期468-472,共5页
We present a method to extend the operating wavelength of the interband transition quantum well photodetector from an extended short-wavelength infrared region to a middle-wavelength infrared region. In the modified I... We present a method to extend the operating wavelength of the interband transition quantum well photodetector from an extended short-wavelength infrared region to a middle-wavelength infrared region. In the modified In As Sb quantum well, Ga Sb is replaced with Al Sb/Al Ga Sb, the valence band of the barrier material is lowered, the first restricted energy level is higher than the valence band of the barrier material, the energy band structure forms type-II structure. The photocurrent spectrum manifest that the fabricated photodetector exhibits a response range from 1.9 μm to 3.2 μm with two peaks at 2.18 μm and 3.03 μm at 78 K. 展开更多
关键词 photodetector energy band calculation InAsSb/AlSb/AlGaSb quantum well interband transition
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Quantifying plasmon resonance and interband transition contributions in photocatalysis of gold nanoparticle
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作者 Liang Dong Chengyun Zhang +6 位作者 Lei Yan Baobao Zhang Huan Chen Xiaohu Mi Zhengkun Fu Zhenglong Zhang Hairong Zheng 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第7期456-460,共5页
Localized surface plasmon has been extensively studied and used for the photocatalysis of various chemical reactions.However,the different contributions between plasmon resonance and interband transition in photocatal... Localized surface plasmon has been extensively studied and used for the photocatalysis of various chemical reactions.However,the different contributions between plasmon resonance and interband transition in photocatalysis has not been well understood.Here,we study the photothermal and hot electrons effects for crystal transformation by combining controlled experiments with numerical simulations.By photo-excitation of Na YF4:Eu^(3+)@Au composite structure,it is found that the plasmonic catalysis is much superior to that of interband transition in the experiments,owing to the hot electrons generated by plasmon decay more energetic to facilitate the reaction.We emphasize that the energy level of hot electrons plays an essential role for improving the photocatalytic activity.The results provide guidelines for improving the efficiency of plasmonic catalysis in future experimental design. 展开更多
关键词 surface plasmon interband transition hot electron photothermal effect
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Influence of Polar Pressure Transmission Medium on the Pressure Coefficient of Excitonic Interband Transitions in Monolayer WSe_2
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作者 Shun-yu Zhou Yan-xia Ye +3 位作者 Kun Ding De-sheng Jiang Xiu-ming Dou Bao-quan Sun 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第6期45-49,共5页
The influence of the pressure transmission medium(PTM)on the excitonic interband transitions in monolayer tungsten diselenide(WSe2)is investigated using photoluminescence(PL)spectra under hydrostatic pressure up... The influence of the pressure transmission medium(PTM)on the excitonic interband transitions in monolayer tungsten diselenide(WSe2)is investigated using photoluminescence(PL)spectra under hydrostatic pressure up to 5GPa.Three kinds of PTMs,condensed argon(Ar),1:1 n-pentane and isopentane mixture(PM),and4:1 methanol and ethanol mixture(MEM,a PTM with polarity),are used.It is found that when either Ar or PM is used as the PTM,the PL peak of exciton related to the direct K-K interband transition shows a pressure-induced blue-shift at a rate of 32±4 or 32±1 meV/GPa,while it turns to be 50±9meV/GPa when MEM is used as the PTM.The indirect A-K interband transition presents almost no shift with increasing pressure up to approximatel.y 5 GPa when Ar and PM are used as the PTM,while it shows a red-shift at the rate of-17±7meV/GPa by using MEM as the PTM.These results reveal that the optical interband transitions of monolayer WSe2 are very sensitive to the polarity of the PTM.The anomalous pressure coefficient obtained using the polar PTM of MEM is ascribed to the existence of hydrogen-like bonds between hydroxyl in MEM and Se atoms under hydrostatic pressure. 展开更多
关键词 PTM MEM Influence of Polar Pressure Transmission Medium on the Pressure Coefficient of Excitonic Interband Transitions in Monolayer WSe2
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ZTE Debuts LTE-A InterBand Dual-Carrier Commercial Base Station at MWC
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作者 ZTE Corporation 《ZTE Communications》 2012年第1期F0002-F0002,共1页
ZTE debuted its LTEA interband dualcarrier commercial base station at the Mobile World Congress 2012 (MWC 2012) in Barcelona on February 27, 2012.
关键词 LTE ZTE Debuts LTE-A InterBand Dual-Carrier Commercial Base Station at MWC Base
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FDD单天线多组合载波聚合解决方案
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作者 杨东 周明晖 《信息与电脑》 2019年第7期175-176,共2页
载波聚合能利用不连续的频谱资源,聚合为载波资源,提高频谱的利用率,增加信号带宽,提高信号的传输速度。不同的运营商采用的载波聚合的形态不同,终端所能支持的载波聚合形态要尽可能多。基于此,在主天线采用单天线的终端系统中,采用分... 载波聚合能利用不连续的频谱资源,聚合为载波资源,提高频谱的利用率,增加信号带宽,提高信号的传输速度。不同的运营商采用的载波聚合的形态不同,终端所能支持的载波聚合形态要尽可能多。基于此,在主天线采用单天线的终端系统中,采用分离滤波器、四工器、DoubleFilter或者TripleFliter替代传统的双工器,实现多种组合载波聚合。 展开更多
关键词 LTE关键技术 载波聚合 单天线 Interband
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Hot hole multiplication from silver plasmon-resonated gold interband transitions for enhanced photoelectrochemical sensing 被引量:1
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作者 Pei Zhang Bo Shen +2 位作者 Xu Li Zhou Nie Kun Li 《Chinese Chemical Letters》 SCIE CAS CSCD 2023年第12期522-526,共5页
Compared with the widespread exploitation of hot electrons in plasmonic nanoparticles(NPs),hot holes generated from plasmonic metal interband transitions,are often overlooked in photoelectrochemistry,including photoel... Compared with the widespread exploitation of hot electrons in plasmonic nanoparticles(NPs),hot holes generated from plasmonic metal interband transitions,are often overlooked in photoelectrochemistry,including photoelectrochemical sensing.Motivated by the subtle spectral overlap between the characteristic plasmonic bands of Ag NPs and interband transitions of Au,herein,we construct unusual core-shell Ag@Au NPs via an anti-galvanic reaction to promote the generation of hot holes.Benefiting from the unique plasmon resonances of Ag cores in specific wavelength regimes,Ag@Au can excite multiplied hot holes while Au cannot under the same conditions.With satisfactory accuracy and good practicability,the photoelectrochemical sensing platform based on Ag@Au NPs possesses a detection limit of 77 nmol/L for glucose,exhibiting significantly higher sensitivity compared to that using Au NPs.This work exemplifies the applications of interband hot-hole accumulation initiated by plasmons and may inspire more strategies to explore the utilization of hot holes in photoelectrochemistry. 展开更多
关键词 Nanoplasmonics Core-shell structures Interband transition Hot hole PHOTOELECTROCHEMICAL Biosensors
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Origin of strong and narrow localized surface plasmon resonance of copper nanocubes 被引量:4
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作者 Peng Zheng Haibin Tang +3 位作者 Botong Liu Sujan Kasani Ling Huang Nianqiang Wu 《Nano Research》 SCIE EI CAS CSCD 2019年第1期63-68,共6页
Inexpe nsive copper nano particles are generally thought to possess weak and broad localized surface plasm on resonance(LSPR).The,present experimental and theoretical studies show that tailoring the Cu nanoparticle to... Inexpe nsive copper nano particles are generally thought to possess weak and broad localized surface plasm on resonance(LSPR).The,present experimental and theoretical studies show that tailoring the Cu nanoparticle to a cubic shape results in a single intense,narrow,and asymmetric LSPR line shape,which is even superior to round-shaped gold nanoparticles.In this study,the dielectric function of copper is decomposed into an interband transition component and a free-electron component.This allows interband transition-induced plasmon damping to be visualized both spectrally and by surface polarization charges.The results reveal that the LSPR of Cu nanocubes originates from the comer mode as it is spectrally separated from the interb and transitions.In additi on,the interband tran sitions lead to severe damping of the local electromagnetic field but the cubic corner LSPR mode survives.Cu nanocubes display an extinction coefficient comparable to the dipole mode of a gold nanosphere with the same volume and show a larger local electromagnetic field enhancement These results will guider-development of in expensive plasmonic copper-based nano materials. 展开更多
关键词 COPPER nanocube LOCALIZED surface PLASMON resonance discrete DIPOLE approximation interband transition
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InAs-based interband cascade lasers at 4.0 μm operating at room temperature 被引量:4
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作者 Tian Yu Shuman Liu +9 位作者 Jinchuan Zhang Bo Xu Lijun Wang Junqi Liu Ning Zhuo Shenqiang Zhai Xiaoling Ye Yonghai Chen Fengqi Liu Zhanguo Wang 《Journal of Semiconductors》 EI CAS CSCD 2018年第11期36-39,共4页
InAs-based interband cascade lasers(ICLs) with InAs plasmon waveguides or InAs/AlSb superlattice(SL) waveguides were demonstrated at emission wavelengths below 4.1 μm. The threshold current densities of the laser... InAs-based interband cascade lasers(ICLs) with InAs plasmon waveguides or InAs/AlSb superlattice(SL) waveguides were demonstrated at emission wavelengths below 4.1 μm. The threshold current densities of the lasers with SL waveguides were 37 A/cm;at 77 K in continuous wave mode. The operation temperature of these lasers reached room temperature in pulsed mode. Compared with the thick InAs n++ plasmon cladding layer, the InAs/AlSb superlattice cladding layers have greater advantages for ICLs with wavelengths less than 4 μm even in InAs based ICLs because in the short-wavelength region they have a higher confinement factor than InAs plasmon waveguides. 展开更多
关键词 interband cascade laser InAs-based InAs/AlSb superlattice
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Theoretical simulation of T2SLs InAs/GaSb cascade photodetector for HOT condition 被引量:2
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作者 Tetiana Manyk Klaudia Hackiewicz +1 位作者 Jaroslaw Rutkowski Piotr Martyniuk 《Journal of Semiconductors》 EI CAS CSCD 2018年第9期34-37,共4页
The investigation of the interband type-II superlattice In As/Ga Sb cascade photodetector in the temperature range of 320–380 K is presented. The article is devoted to the theoretical modeling of the cascade detector... The investigation of the interband type-II superlattice In As/Ga Sb cascade photodetector in the temperature range of 320–380 K is presented. The article is devoted to the theoretical modeling of the cascade detector characteristics by the use of the Simu Apsys platform and the 4-band model(k·p 8 × 8 method). The obtained theoretical characteristics are comparable with experimentally measured ones, suggesting that transport in the absorber is determined by the dynamics of intrinsic carriers and by their lifetime. An overlap equal to 120 me V was used in calculations and a correction term in the "non-common atom" model Hxy = 700 me V was added to the Hamiltonian. The electron and hole effective masses from dispersion curves were estimated and absorption coefficient α was calculated. Based on the simulation detectivity, D* characteristics in the temperature range 320–380 K were calculated. The simulated theoretical characteristics at 320 K are comparable to experimentally measured ones, however at higher temperatures, the experimental value of D* does not reach the theoretical values due to the low resistance of the device and short diffusion length. 展开更多
关键词 interband cascade photodetectors type-II superlattice infrared detectors
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Detection of Ethanol Using a Tunable Interband Cascade Laser at 3.345μm 被引量:2
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作者 Hui GAO Liang XIE +1 位作者 Ping GONG Hui WANG 《Photonic Sensors》 SCIE EI CAS CSCD 2018年第4期303-309,共7页
With the progress of the laser manufacturing technology, trace gas sensors based on tunable interband cascade lasers (ICLs) and quantum cascade lasers (QCLs) have been widely used to detect organic compounds with ... With the progress of the laser manufacturing technology, trace gas sensors based on tunable interband cascade lasers (ICLs) and quantum cascade lasers (QCLs) have been widely used to detect organic compounds with high sensitivity. Compared with overtone and combination bands in the near infrared region, for many species, the intensities of fundamental rotational-vibrational absorption bands in the mid-infrared region are much stronger. In this paper, we demonstrate an ethanol sensor using a room-temperature continuous-wave (CW) tunable ICL laser as a light source to detect ethanol vapor concentration with high sensitivity. Combined with the first harmonic (1 f) normalized second harmonic (2f) wavelength modulation spectroscopy (WMS) technology, the characteristics of the harmonics of the system are analyzed, and the amplitude of the first harmonic decrease with an increased concentration of ethanol has been demonstrated both theoretically and experimentally. As a result, a detection limitation of 28 ppb is achieved. 展开更多
关键词 Ethanol sensor interband cascade lasers wavelength modulation spectroscopy
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Multistage interband cascade photovoltaic devices with a bandgap of 0.23 eV operating above room temperature
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作者 Hao Ye Hossein Lotfi +7 位作者 Lu Li Robert T.Hinkey Rui Q.Yang Lin Lei Joel C.Keay Matthew B.Johnson Tetsuya D.Mishima Michael B.Santos 《Chinese Science Bulletin》 SCIE EI CAS 2014年第10期950-955,共6页
Interband cascade(IC)photovoltaic(PV)device structures,consisting of multiple discrete InAs/GaSb superlattice absorbers sandwiched between electron and hole barriers,were grown by molecular beam epitaxy.Details of the... Interband cascade(IC)photovoltaic(PV)device structures,consisting of multiple discrete InAs/GaSb superlattice absorbers sandwiched between electron and hole barriers,were grown by molecular beam epitaxy.Details of the molecular beam epitaxy growth and material characterization of the structures are presented.The discrete absorber architecture enables certain advantages,such as high open-circuit voltage,high collection efficiency,high operating temperature,and smooth integration of cascade stages with different bandgaps.The two-and three-stage ICPV devices presented in this article operate at room temperature with substantial open-circuit voltages at a cutoff wavelength of 5.3 lm(corresponding to a bandgap of 0.23 eV),the longest ever reported for room temperature PV devices.The device characteristics indicate a high level of current matching and demonstrate the advantages of the interband cascade approach in thermophotovoltaic cell design. 展开更多
关键词 INAS GASB SUPERLATTICE THERMOPHOTOVOLTAIC Interband cascade devices
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Interband cascade lasers with short electron injector
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作者 Chao Ning Tian Yu +7 位作者 Shuman Liu Jinchuan Zhang Lijun Wang Junqi Liu Ning Zhuo Shenqiang Zhai Yuan Li Fengqi Liu 《Chinese Optics Letters》 SCIE EI CAS CSCD 2022年第2期142-147,共6页
We demonstrate Ga Sb-based interband cascade lasers(ICLs) emitting around 3.65 μm, which exhibit a room-temperature continuous-wave(CW) output power above 100 m W. Cavity-length analysis showed that the laser structu... We demonstrate Ga Sb-based interband cascade lasers(ICLs) emitting around 3.65 μm, which exhibit a room-temperature continuous-wave(CW) output power above 100 m W. Cavity-length analysis showed that the laser structure has a low internal loss of 3 cm^(-1) while maintaining a total internal quantum efficiency greater than one. After 6400 h CW operation at 25°C,the threshold current of the laser increased by 3%, and the output power decreased by 7%, indicating good reliability of the device. 展开更多
关键词 interband cascade lasers quantum well MID-INFRARED semiconductor lasers
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Dielectric confinement on exciton binding energy and nonlinear optical properties in a strained Zn_(1-x_(in))Mg_(x(in))Se/Zn_(1-x(out))Mg_(x(out))Se quantum well
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作者 J.Abraham Hudson Mark A.John Peter 《Journal of Semiconductors》 EI CAS CSCD 2012年第9期1-7,共7页
The band offsets for a Zn1-xin Mgxin Se/Zn1-xout Mgxout Se quantum well heterostructure are determined using the model solid theory. The heavy hole exciton binding energies are investigated with various Mg alloy conte... The band offsets for a Zn1-xin Mgxin Se/Zn1-xout Mgxout Se quantum well heterostructure are determined using the model solid theory. The heavy hole exciton binding energies are investigated with various Mg alloy contents. The effect of mismatch between the dielectric constants between the well and the barrier is taken into account. The dependence of the excitonic transition energies on the geometrical confinement and the Mg alloy is discussed. Non-linear optical properties are determined using the compact density matrix approach. The linear, third order non-linear optical absorption coefficient values and the refractive index changes of the exciton are calculated for different concentrations of magnesium. The results show that the occurred blue shifts of the resonant peak due to the Mg incorporation give the information about the variation of two energy levels in the quantum well width. 展开更多
关键词 interband emission energy exciton binding energy quantum well
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