The Richtmyer–Meshkov instability of a 'V' shaped air/helium interface subjected to a weak shock

The Richtmyer-Meshkov instability ofa ‘V＇ shaped air/helium gaseous interface subjected to a weak shock wave is experimentally studied. A soap film technique is adopted to create a ‘V＇ shaped interface with accurate initial conditions. Five kinds of ‘V＇ shaped interfaces with different vertex angles are formed to highlight the effects of initial conditions on the flow characteristics. The results show that a spike is generated after the shock impact, and grows constantly with time. As the vertex angle increases, vortices generated on the interface become less noticeable, and the spike develops less pronouncedly. The linear growth rate of interface width after compression phase is estimated by a linear model and a revised linear model, and the latter is proven to be more effective for the interface with high initial amplitudes. The linear growth rate of interface width is, for the first time in a heavy/light interface configuration, found to be a non-monotonous function of the initial perturbation amplitude-wavelength ratio.

THE THERMAL STRESS ANALYSIS OF THE INTERFACIAL EDGE IN DISSIMILAR STRUCTURE AND THE EFFECTS OF GEOMETRIC SHAPE

This paper describes the analysis of the thermal stress concentration and the effects of geometrical shape in the interfacial edge by FEM. It is shown that the elevated stress in a dissimilar material caused by temperature is only restricted in a minor region of the interfacial edge, where the stress peak value and and the stress gradient are high. It is also found that narrowing the boundary angle can effectively reduce the peak value of stress components on the interfacial layer, especially the peeling stress σ y , which is a condition of the debonding failure in the interface.θ=60, an obvious variation, proves that selecting a reasonable edge geometrical shape helps to reduce the value of the maximum stress. At last the methods of relaxing stress concentration and effects of the geometric blunt are also discussed.

熔体生长中自然对流对溶质分凝和界面形状的影响

The uniformity of impurity distribution in a melt growth process is significantly determined by the melt convection and melt/crystal interface.Therefore,it is important to investigate the coupling effects of convection,segregation and growth interface shapes in order to largely improve the crystal quality. In this paper,we employ a finite element algorithm to study the vertical Bridgman growth process of Te doped GaSb crystals.The calculation model consists of unsteady state equations of heat transfer,mass transfer and momentum transfer,as well as their correspondingly boundary and initial conditions.A boundary conformal mapping technique is used to obtain the free melt/crystal interface shape and position which is a prior unknown.The set of algebraic equations obtained after finite element discretion is iteratively solved by Newton Raphson method until a given criterion is reached.

Shape Memory Effect,Thermal Expansion and Damping Property of Friction Stir Processed NiTip/Al Composite

NiTi particles reinforced aluminum （NiTip/Al） composite was prepared via friction stir processing, elimi- nating interfacial reaction and/or elemental diffusion. The NiTip in the composite maintained the intrinsic characteristic of a reversible thermoelastic phase transformation even after heat-treatment. The shape memory characteristic of the NiTip decreased the coefficient of thermal expansion of the Al matrix, and an apparent two-way shape memory effect was observed in the composite. The composite owned a good combination of adjustable damping and thermal physical properties.

Analysis of microcrystal formation in DS-silicon ingot

The DS(directional solidification) polycrystalline silicon ingot is the most important photovoltaic material today,and the conversion efficiency of solar cells is affected by the morphology and organization of the crystal.Uniform grains with larger size are conducive to get high-quality wafer,so improving the cell conversion efficiency.However,grains sizes that are less than 1 mm2 can be observed frequently in the central district of mc-Si ingots,which bring negative effect to the quality of the mc-Si ingot and decrease the electrical performance of wafer.In this paper,we make an attempt to explain the formation mechanism and influence factors of microcrystal in mc-Si ingot with computer simulation technology and theory of component supercooling.It was found that:to avoid production of microcrystal,it's better to increase the value of G/V(V is the growth rate and G is the near-interface temperature gradient),strengthen the melt convection front in the solidification interface and keep a fairly flat solid/melt interface in producing mc-Si ingot.