An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents ...An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents a small signal AlGaAs/GaAs HBT equivalent circuit, based on the DC characteristics and S parameter of the device. Using Volterra series, we have calculated the third order intermodulation distortion in a linear AlGaAs/GaAs HBT amplifier. The calculations are well concordant with the measurements from two tone signals intermodulation distortion test, and its excellent third order intermodulation performance shows that AlGaAs/GaAs HBT is a very attractive candidate for linear amplification.展开更多
Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order in...Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order intermodulation distortion(IM2 ), the third order intermodulation distortion(IM 3) and intercept point(IP 3) are deduced. With the aid of software Multisim, we simulate transistor common emitter amplifier, transistor common emitter amplifier with resistor in emitter, differential amplifier and differential amplifier with resistor between emitters. The simulational results and theoretical analyses are almost the same.展开更多
This paper presents an analog predistortion circuit for RF optical fiber links. The circuit consists of two source-coupled differential transconductance amplifiers which could provide linear and nonlinear transfer cha...This paper presents an analog predistortion circuit for RF optical fiber links. The circuit consists of two source-coupled differential transconductance amplifiers which could provide linear and nonlinear transfer characteristics by adjusting the bias voltage and the transistor sizes. The circuit was designed and realized in a standard 0,18-μm CMOS technology of SMIC. The chip occupies 0.48 × 0.24 mm^2. The DC supply is 3.3 V. Using this circuit, the third-order intermodulation distortion （IMD） suppression of a directly modulated RF optical fiber link can be improved by 9-16 dBc at relatively low cost.展开更多
文摘An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents a small signal AlGaAs/GaAs HBT equivalent circuit, based on the DC characteristics and S parameter of the device. Using Volterra series, we have calculated the third order intermodulation distortion in a linear AlGaAs/GaAs HBT amplifier. The calculations are well concordant with the measurements from two tone signals intermodulation distortion test, and its excellent third order intermodulation performance shows that AlGaAs/GaAs HBT is a very attractive candidate for linear amplification.
文摘Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order intermodulation distortion(IM2 ), the third order intermodulation distortion(IM 3) and intercept point(IP 3) are deduced. With the aid of software Multisim, we simulate transistor common emitter amplifier, transistor common emitter amplifier with resistor in emitter, differential amplifier and differential amplifier with resistor between emitters. The simulational results and theoretical analyses are almost the same.
基金Project supported by the High-Tech-Program of China (No.2007AA01Z2a5)
文摘This paper presents an analog predistortion circuit for RF optical fiber links. The circuit consists of two source-coupled differential transconductance amplifiers which could provide linear and nonlinear transfer characteristics by adjusting the bias voltage and the transistor sizes. The circuit was designed and realized in a standard 0,18-μm CMOS technology of SMIC. The chip occupies 0.48 × 0.24 mm^2. The DC supply is 3.3 V. Using this circuit, the third-order intermodulation distortion （IMD） suppression of a directly modulated RF optical fiber link can be improved by 9-16 dBc at relatively low cost.
