An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents ...An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents a small signal AlGaAs/GaAs HBT equivalent circuit, based on the DC characteristics and S parameter of the device. Using Volterra series, we have calculated the third order intermodulation distortion in a linear AlGaAs/GaAs HBT amplifier. The calculations are well concordant with the measurements from two tone signals intermodulation distortion test, and its excellent third order intermodulation performance shows that AlGaAs/GaAs HBT is a very attractive candidate for linear amplification.展开更多
Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order in...Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order intermodulation distortion(IM2 ), the third order intermodulation distortion(IM 3) and intercept point(IP 3) are deduced. With the aid of software Multisim, we simulate transistor common emitter amplifier, transistor common emitter amplifier with resistor in emitter, differential amplifier and differential amplifier with resistor between emitters. The simulational results and theoretical analyses are almost the same.展开更多
针对星载功率放大器噪声功率比(noise power ratio,NPR)指标缺乏考核方法的问题,根据多载波非线性工作原理,使用基于数字I/Q调制的方法在Matlab里编辑基带波形文件,形成具有陷波的宽带多载波信号,依据频谱仪采样的数字预处理方法校准宽...针对星载功率放大器噪声功率比(noise power ratio,NPR)指标缺乏考核方法的问题,根据多载波非线性工作原理,使用基于数字I/Q调制的方法在Matlab里编辑基带波形文件,形成具有陷波的宽带多载波信号,依据频谱仪采样的数字预处理方法校准宽带多载波信号的幅度平坦度,调节矢量信号源I/Q两路的功率偏置进而调整陷波的深度来生成满足条件的宽带多载波激励信号。通过输入放大器该校正后的激励信号、分析被测放大器件输出端频谱陷波内产生的互调失真分量的测试方法,设计了通过矢量信号源和频谱仪进行测试的方案。根据方案所搭建的测试系统,完成了某K频段行波管放大器(主载波频率为19800MHz,带宽为80MHz)的测试验证。研究结果表明,提出的NPR测试方法有效可行,为考核星载微波功率放大器NPR指标提供了具体的测试方法。展开更多
文摘An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents a small signal AlGaAs/GaAs HBT equivalent circuit, based on the DC characteristics and S parameter of the device. Using Volterra series, we have calculated the third order intermodulation distortion in a linear AlGaAs/GaAs HBT amplifier. The calculations are well concordant with the measurements from two tone signals intermodulation distortion test, and its excellent third order intermodulation performance shows that AlGaAs/GaAs HBT is a very attractive candidate for linear amplification.
文摘Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order intermodulation distortion(IM2 ), the third order intermodulation distortion(IM 3) and intercept point(IP 3) are deduced. With the aid of software Multisim, we simulate transistor common emitter amplifier, transistor common emitter amplifier with resistor in emitter, differential amplifier and differential amplifier with resistor between emitters. The simulational results and theoretical analyses are almost the same.
文摘针对星载功率放大器噪声功率比(noise power ratio,NPR)指标缺乏考核方法的问题,根据多载波非线性工作原理,使用基于数字I/Q调制的方法在Matlab里编辑基带波形文件,形成具有陷波的宽带多载波信号,依据频谱仪采样的数字预处理方法校准宽带多载波信号的幅度平坦度,调节矢量信号源I/Q两路的功率偏置进而调整陷波的深度来生成满足条件的宽带多载波激励信号。通过输入放大器该校正后的激励信号、分析被测放大器件输出端频谱陷波内产生的互调失真分量的测试方法,设计了通过矢量信号源和频谱仪进行测试的方案。根据方案所搭建的测试系统,完成了某K频段行波管放大器(主载波频率为19800MHz,带宽为80MHz)的测试验证。研究结果表明,提出的NPR测试方法有效可行,为考核星载微波功率放大器NPR指标提供了具体的测试方法。
