The hydrogenic donor impurity states and intersubband optical absorption spectra in monolayer transition metal dichalcogenides(ML TMDs) under dielectric environments are theoretically investigated based on a two-dimen...The hydrogenic donor impurity states and intersubband optical absorption spectra in monolayer transition metal dichalcogenides(ML TMDs) under dielectric environments are theoretically investigated based on a two-dimensional(2D)nonorthogonal associated Laguerre basis set. The 2D quantum confinement effect together with the strongly reduced dielectric screening results in the strong attractive Coulomb potential between electron and donor ion, with exceptionally large impurity binding energy and huge intersubband oscillator strength. These lead to the strong interaction of the electron with light in a 2D regime. The intersubband optical absorption spectra exhibit strong absorption lines of the non-hydrogenic Rydberg series in the mid-infrared range of light. The strength of the Coulomb potential can be controlled by changing the dielectric environment. The electron affinity difference leads to charge transfer between ML TMD and the dielectric environment, generating the polarization-electric field in ML TMD accompanied by weakening the Coulomb interaction strength. The larger the dielectric constant of the dielectric environment, the more the charge transfer is, accompanied by the larger polarization-electric field and the stronger dielectric screening. The dielectric environment is shown to provide an efficient tool to tune the wavelength and output of the mid-infrared intersubband devices based on ML TMDs.展开更多
The effects of polarization and related structural parameters on the intersubband transitions of A1GaN/GaN multi- quantum wells (MQWs) have been investigated by solving the Schr6dinger and the Poisson equations self...The effects of polarization and related structural parameters on the intersubband transitions of A1GaN/GaN multi- quantum wells (MQWs) have been investigated by solving the Schr6dinger and the Poisson equations self-consistently. The results show that the intersubband absorption coefficient increases with increasing polarization while the transition wavelength decreases, which is not identical to the case of the interband transitions. Moreover, it suggests that the well width has a greater effect on the intersubband transitions than the barrier thickness, and the intersubband transition wavelength of the structure when doped in the barrier is shorter than that when doped in the well. It is found that the influences of the structural parameters differ for different electron subbands. The mechanisms responsible for these effects have been investigated in detail.展开更多
A detailed numerical calculation on the phonon-assisted intersubband transition rates of electrons in wurtzite CaN/InxGal-xN quantum wells is presented. The quantum-confined Stark effect, induced by the built-in elect...A detailed numerical calculation on the phonon-assisted intersubband transition rates of electrons in wurtzite CaN/InxGal-xN quantum wells is presented. The quantum-confined Stark effect, induced by the built-in electric field, and the ternary mixed crystal effect are considered. The electron states are obtained by iteratively solving the coupled SchrSdinger and Poisson equations. The dispersion properties of each type of phonon modes are considered in the derivation of Fermi's golden rule to evaluate the transition rates. It is indicated that the interface and half- space phonon scattering play an important role in the process of 1 2 radiative transition. The transition rate is also greatly reduced by the built-in electric field. This work can be helpful for the structural design and simulation of new semiconductor lasers.展开更多
Nonlinear optical properties of intersubband electrons in a 3-level quantum well under intense terahertz field are investigated by using a density matrix approach. The results show that the terahertz fields with diffe...Nonlinear optical properties of intersubband electrons in a 3-level quantum well under intense terahertz field are investigated by using a density matrix approach. The results show that the terahertz fields with different frequencies cause the distinct modulations of the intersubband absorptions. The terahertz-indueed sideband and Autler-Towns splitting in the absorption spectrum are obtained, respectively for the terahertz-photon energy below and close to the transition energy between the ground and first excited state.展开更多
The hole subband structures and effective masses of tensile strained Si/Sil-yGey quantum wells are calculated by using the 6 × 6 k·p method. The results show that when the tensile strain is induced in the qu...The hole subband structures and effective masses of tensile strained Si/Sil-yGey quantum wells are calculated by using the 6 × 6 k·p method. The results show that when the tensile strain is induced in the quantum well, the light-hole state becomes the ground state, and the light hole effective masses in the growth direction are strongly reduced while the in-plane effective masses are considerable. Quantitative calculation of the valence intersubband transition between two light hole states in a 7nm tensile strained Si/Si0.55Ge0.45 quantum well grown on a relaxed Si0.5Ge0.5 (100) substrates shows a large absorption coefficient of 8400 cm^-1.展开更多
In this paper, we theoretically study the effects of doping concentration ND and an external electric field on the intersubband transitions in InxAl(l-x)N/InyGa(l-y)N single quantum well by solving the Schrodinger...In this paper, we theoretically study the effects of doping concentration ND and an external electric field on the intersubband transitions in InxAl(l-x)N/InyGa(l-y)N single quantum well by solving the Schrodinger and Poisson equations self-consistently. Obtained results including transition energies, the band structure, and the optical absorption have been discussed. The lowest three intersubband transitions (E2 -El), (E3 -El), and (E3 -E2) are calculated as functions of doping concentration ND. By increasing the doping concentration ND, the depletion effect can be reduced, and the ionized electrons will compensate the internal electric field which results from the spontaneous polarization. Our results show that an optimum concentration ND exists for which the transition 0.8 eV (1.55 μm) is carried out. Finally, the dependence of the optical absorption α13(ω) on the external electric field and doping concentration is studied. The maximum of the optical absorption can be red-shifted or blue-shifted through varying the doping concentration and the external electric field. The obtained results can be used for designing optical fiber telecommunications operating at 1.55 μm.展开更多
This paper presents Atmospheric Pressure Metalorganic Chemical Vapor Deposition(AP-MOCVD) growth of GaAs/Al-xGa_(1-x)As multiquantum wells for the study of intersubband transition.The multiple quantum well structures ...This paper presents Atmospheric Pressure Metalorganic Chemical Vapor Deposition(AP-MOCVD) growth of GaAs/Al-xGa_(1-x)As multiquantum wells for the study of intersubband transition.The multiple quantum well structures are characterized by using cross-sectional transmission electron microscopy(TEM) and low temperature photoluminescence(PL),which are in consistent with the designed parameters.The in- frared absorption from intersubband transitions between the bounded- ground state and the extended excited state in GaAs/AtGaAs quantum wells shows peak at 10 μm with FWHM 250 cm^(-1).The absorption peak positions are in agreement with the calculated results based on the envelope function approximation.展开更多
We propose an optically pumped nonpolar GaN/AlGaN quantum well(QW) active region design for terahertz(THz) lasing in the wavelength range of 30 μm~ 40 μm and operating at room temperature.The fast longitudinal ...We propose an optically pumped nonpolar GaN/AlGaN quantum well(QW) active region design for terahertz(THz) lasing in the wavelength range of 30 μm~ 40 μm and operating at room temperature.The fast longitudinal optical(LO) phonon scattering in GaN/AlGaN QWs is used to depopulate the lower laser state,and more importantly,the large LO phonon energy is utilized to reduce the thermal population of the lasing states at high temperatures.The influences of temperature and pump intensity on gain and electron densities are investigated.Based on our simulations,we predict that with a sufficiently high pump intensity,a room temperature operated THz laser using a nonpolar GaN/AlGaN structure is realizable.展开更多
Some realizable structures of double parabolic quantum wells(DPQWs) consisting of Al_xGa_(1-x)As/Al_yGa_(1-y)As are constructed to discuss theoretically the optical absorption due to the intersubband transition ...Some realizable structures of double parabolic quantum wells(DPQWs) consisting of Al_xGa_(1-x)As/Al_yGa_(1-y)As are constructed to discuss theoretically the optical absorption due to the intersubband transition of electrons for both symmetric and asymmetric cases with three energy levels of conduction bands. The electronic states in these structures are obtained using a finite element difference method. Based on a compact density matrix approach, the optical absorption induced by intersubband transition of electrons at room temperature is discussed. The results reveal that the peak positions and heights of intersubband optical absorption coefficients(IOACs) of DPQWs are sensitive to the barrier thickness, depending on Al component. Furthermore, external electric fields result in the decrease of peak, and play an important role in the blue shifts of absorption spectra due to electrons excited from ground state to the first and second excited states. It is found that the peaks of IOACs are smaller in asymmetric DPQWs than in symmetric ones. The results also indicate that the adjustable extent of incident photon energy for DPQW is larger than for a square one of a similar size. Our results are helpful in experiments and device fabrication.展开更多
The microscopic equations of motion including many-body effects are derived to study the intersubband polarization in the double quantum well structure induced by an ultrafast pumping infrared light. Based on the self...The microscopic equations of motion including many-body effects are derived to study the intersubband polarization in the double quantum well structure induced by an ultrafast pumping infrared light. Based on the selfconsistent field theory, the transient probe absorption coefficient is calculated. These calculations are beyond the previous steady-state assumption. Transient probe absorption spectra are calculated under different pumping intensity and various pump probe delay.展开更多
On-demand modification of the electronic band structures of high-mobility two-dimensional(2D)materials is of great interest for various applications that require rapid tuning of electrical and optical responses of sol...On-demand modification of the electronic band structures of high-mobility two-dimensional(2D)materials is of great interest for various applications that require rapid tuning of electrical and optical responses of solid-state devices.Although electrically tunable superlattice(SL)potentials have been proposed for band structure engineering of the Dirac electrons in graphene,the ultimate goal of engineering emergent quasiparticle excitations that can hybridize with light has not been achieved.We show that an extreme modulation of one-dimensional(1D)SL potentials in monolayer graphene produces ladder-like electronic energy levels near the Fermi surface,resulting in optical conductivity dominated by intersubband transitions(ISBTs).A specific and experimentally realizable platform comprising hBN-encapsulated graphene on top of a 1D periodic metagate and a second unpatterned gate is shown to produce strongly modulated electrostatic potentials.We find that Dirac electrons with large momenta perpendicular to the modulation direction are waveguided via total internal reflections off the electrostatic potential,resulting in flat subbands with nearly equispaced energy levels.The predicted ultrastrong coupling of surface plasmons to electrically controlled ISBTs is responsible for emergent polaritonic quasiparticles that can be optically probed.Our study opens an avenue for exploring emergent polaritons in 2D materials with gate-tunable electronic band structures.展开更多
An interference suppression design scheme based on conjugate weighted butterfly interleaving mapping(CWBIM)is proposed for inter-carrier interference(ICI)and inter-subband interference(IBI)in the received signals of u...An interference suppression design scheme based on conjugate weighted butterfly interleaving mapping(CWBIM)is proposed for inter-carrier interference(ICI)and inter-subband interference(IBI)in the received signals of universal filtered multi-carrier(UFMC)systems.It applies an interleaving mapping operation to subtract the interference coefficients of adjacent terms in ICI and IBI twice,thereby achieving suppression effects similar to the self-cancellation(SC)algorithm while maintaining the original data transmission efficiency.Meanwhile,conjugate and complex weighting operations can effectively suppress the impact of phase rotation errors in high-speed mobile channel environments,thereby further improving the bit error rate(BFR)performance of the system,Moreover,butterfly operation can effectively control the computational complexity of the interleaving mapping process.Theoretical analysis and simulation results show that,compared with the PSC-UFMC algorithm,the CWBIM-UFMC scheme proposed in this paper can effectively suppress ICI and IBI in the received signal without compromising data transmission efficiency and reducing computational complexity,thereby achieving good BER performance of the system.展开更多
Effects of LO-phonon contribution on the electronic and the optical properties are investigated in a Cdo.sZno.2 Se/ZnSe quantum dot in the presence of magnetic field strength. The magneto-polaron induced hydro- genic ...Effects of LO-phonon contribution on the electronic and the optical properties are investigated in a Cdo.sZno.2 Se/ZnSe quantum dot in the presence of magnetic field strength. The magneto-polaron induced hydro- genic binding energy as a function of dot radius in the wide band gap quantum dot is calculated. The oscilla- tor strength and the spontaneous lifetime are studied taking into account the spatial confinement, magnetic field strength and the phonon contribution. Numerical calculations are carried out using variational formulism within the single band effective mass approximation. The optical properties are computed with the compact density matrix method. The magneto-polaron induced optical gain as a function of photon energy is observed. The results show that the optical telecommunication wavelength in the fiber optic communications can be achieved using CdSe/ZnSe semiconductors and it can be tuned with the proper applications of external perturbations.展开更多
Based on the effective mass approximation, the Schrodinger equation and Poisson equation in GaAs/AlGaAs multi-quantum wells(MQWs) are self-consistently solved to obtain the wave functions and energy levels of electron...Based on the effective mass approximation, the Schrodinger equation and Poisson equation in GaAs/AlGaAs multi-quantum wells(MQWs) are self-consistently solved to obtain the wave functions and energy levels of electrons in the conduction band for the ground first excited state by considering a lateral electric field(LEF). Then, the effects of size, ternary mixed crystal, doping concentration, and temperature on linear and nonlinear intersubband optical absorption coefficients(IOACs), and refractive index changes(RICs) due to the transition between ground states and the first excited states of electrons are discussed based on Fermi’s golden rule. The results show that, under a fixed LEF, with increase of A1 composition and doping concentration, the IOACs produce a red shift. With increases of both widths of the wells and barriers IOACs appear as blue shifts and their amplitudes increase, but the barrier width change is much more important to affect nonlinear IOACs, whereas increasing the temperature results in a blue shift first and then a red shift of IOACs. When the other parameters are fixed but there is an increase in the LEF, IOACs occur with a blue shift, and the RICs have similar properties.展开更多
文摘The hydrogenic donor impurity states and intersubband optical absorption spectra in monolayer transition metal dichalcogenides(ML TMDs) under dielectric environments are theoretically investigated based on a two-dimensional(2D)nonorthogonal associated Laguerre basis set. The 2D quantum confinement effect together with the strongly reduced dielectric screening results in the strong attractive Coulomb potential between electron and donor ion, with exceptionally large impurity binding energy and huge intersubband oscillator strength. These lead to the strong interaction of the electron with light in a 2D regime. The intersubband optical absorption spectra exhibit strong absorption lines of the non-hydrogenic Rydberg series in the mid-infrared range of light. The strength of the Coulomb potential can be controlled by changing the dielectric environment. The electron affinity difference leads to charge transfer between ML TMD and the dielectric environment, generating the polarization-electric field in ML TMD accompanied by weakening the Coulomb interaction strength. The larger the dielectric constant of the dielectric environment, the more the charge transfer is, accompanied by the larger polarization-electric field and the stronger dielectric screening. The dielectric environment is shown to provide an efficient tool to tune the wavelength and output of the mid-infrared intersubband devices based on ML TMDs.
基金Project supported by the National Basic Research Program of China (Grant Nos. 2012CB619302 and 2010CB923204)the National Natural Science Foundation of China (Grant Nos. 60976042, 51002058, and 11104150)the China Postdoctoral Science Foundation (Grant No. 20100480064)
文摘The effects of polarization and related structural parameters on the intersubband transitions of A1GaN/GaN multi- quantum wells (MQWs) have been investigated by solving the Schr6dinger and the Poisson equations self-consistently. The results show that the intersubband absorption coefficient increases with increasing polarization while the transition wavelength decreases, which is not identical to the case of the interband transitions. Moreover, it suggests that the well width has a greater effect on the intersubband transitions than the barrier thickness, and the intersubband transition wavelength of the structure when doped in the barrier is shorter than that when doped in the well. It is found that the influences of the structural parameters differ for different electron subbands. The mechanisms responsible for these effects have been investigated in detail.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60966001)the Science Foundation of Inner Mongolia Autonomous Region, China (Grant No. 2010BS0102)
文摘A detailed numerical calculation on the phonon-assisted intersubband transition rates of electrons in wurtzite CaN/InxGal-xN quantum wells is presented. The quantum-confined Stark effect, induced by the built-in electric field, and the ternary mixed crystal effect are considered. The electron states are obtained by iteratively solving the coupled SchrSdinger and Poisson equations. The dispersion properties of each type of phonon modes are considered in the derivation of Fermi's golden rule to evaluate the transition rates. It is indicated that the interface and half- space phonon scattering play an important role in the process of 1 2 radiative transition. The transition rate is also greatly reduced by the built-in electric field. This work can be helpful for the structural design and simulation of new semiconductor lasers.
基金Project supported by the National Science Fund for Distinguished Young Scholars of China (Grant Nos 60425415 and 605280058), the Major Program of the National Natural Science Foundation of China (Grant No 10390162), and the Shanghai Municipal Commission of Science and Technology of China (Grant Nos 03JC14082 and 05XD14020).
文摘Nonlinear optical properties of intersubband electrons in a 3-level quantum well under intense terahertz field are investigated by using a density matrix approach. The results show that the terahertz fields with different frequencies cause the distinct modulations of the intersubband absorptions. The terahertz-indueed sideband and Autler-Towns splitting in the absorption spectrum are obtained, respectively for the terahertz-photon energy below and close to the transition energy between the ground and first excited state.
基金supported by National Natural Science Foundation of China (Grant Nos 50672079,60336010 and 60676027)National Basic Research Program of China (Grant No 2007CB613400)
文摘The hole subband structures and effective masses of tensile strained Si/Sil-yGey quantum wells are calculated by using the 6 × 6 k·p method. The results show that when the tensile strain is induced in the quantum well, the light-hole state becomes the ground state, and the light hole effective masses in the growth direction are strongly reduced while the in-plane effective masses are considerable. Quantitative calculation of the valence intersubband transition between two light hole states in a 7nm tensile strained Si/Si0.55Ge0.45 quantum well grown on a relaxed Si0.5Ge0.5 (100) substrates shows a large absorption coefficient of 8400 cm^-1.
文摘In this paper, we theoretically study the effects of doping concentration ND and an external electric field on the intersubband transitions in InxAl(l-x)N/InyGa(l-y)N single quantum well by solving the Schrodinger and Poisson equations self-consistently. Obtained results including transition energies, the band structure, and the optical absorption have been discussed. The lowest three intersubband transitions (E2 -El), (E3 -El), and (E3 -E2) are calculated as functions of doping concentration ND. By increasing the doping concentration ND, the depletion effect can be reduced, and the ionized electrons will compensate the internal electric field which results from the spontaneous polarization. Our results show that an optimum concentration ND exists for which the transition 0.8 eV (1.55 μm) is carried out. Finally, the dependence of the optical absorption α13(ω) on the external electric field and doping concentration is studied. The maximum of the optical absorption can be red-shifted or blue-shifted through varying the doping concentration and the external electric field. The obtained results can be used for designing optical fiber telecommunications operating at 1.55 μm.
基金Work supported by the National Natural Science Foundation of China.
文摘This paper presents Atmospheric Pressure Metalorganic Chemical Vapor Deposition(AP-MOCVD) growth of GaAs/Al-xGa_(1-x)As multiquantum wells for the study of intersubband transition.The multiple quantum well structures are characterized by using cross-sectional transmission electron microscopy(TEM) and low temperature photoluminescence(PL),which are in consistent with the designed parameters.The in- frared absorption from intersubband transitions between the bounded- ground state and the extended excited state in GaAs/AtGaAs quantum wells shows peak at 10 μm with FWHM 250 cm^(-1).The absorption peak positions are in agreement with the calculated results based on the envelope function approximation.
基金Project supported in part by the National Major Basic Research Program of China (Grant No. 2011CB925603)the Shanghai Municipal Major Basic Research Project (Grant No. 09DJ1400102)
文摘We propose an optically pumped nonpolar GaN/AlGaN quantum well(QW) active region design for terahertz(THz) lasing in the wavelength range of 30 μm~ 40 μm and operating at room temperature.The fast longitudinal optical(LO) phonon scattering in GaN/AlGaN QWs is used to depopulate the lower laser state,and more importantly,the large LO phonon energy is utilized to reduce the thermal population of the lasing states at high temperatures.The influences of temperature and pump intensity on gain and electron densities are investigated.Based on our simulations,we predict that with a sufficiently high pump intensity,a room temperature operated THz laser using a nonpolar GaN/AlGaN structure is realizable.
基金Project supported by the National Natural Science Foundation of China(Grant No.61274098)
文摘Some realizable structures of double parabolic quantum wells(DPQWs) consisting of Al_xGa_(1-x)As/Al_yGa_(1-y)As are constructed to discuss theoretically the optical absorption due to the intersubband transition of electrons for both symmetric and asymmetric cases with three energy levels of conduction bands. The electronic states in these structures are obtained using a finite element difference method. Based on a compact density matrix approach, the optical absorption induced by intersubband transition of electrons at room temperature is discussed. The results reveal that the peak positions and heights of intersubband optical absorption coefficients(IOACs) of DPQWs are sensitive to the barrier thickness, depending on Al component. Furthermore, external electric fields result in the decrease of peak, and play an important role in the blue shifts of absorption spectra due to electrons excited from ground state to the first and second excited states. It is found that the peaks of IOACs are smaller in asymmetric DPQWs than in symmetric ones. The results also indicate that the adjustable extent of incident photon energy for DPQW is larger than for a square one of a similar size. Our results are helpful in experiments and device fabrication.
基金the National Fund for Distinguished Young Scholars of China,国家重点基础研究发展计划(973计划),上海市科委资助项目
文摘The microscopic equations of motion including many-body effects are derived to study the intersubband polarization in the double quantum well structure induced by an ultrafast pumping infrared light. Based on the selfconsistent field theory, the transient probe absorption coefficient is calculated. These calculations are beyond the previous steady-state assumption. Transient probe absorption spectra are calculated under different pumping intensity and various pump probe delay.
基金supported by the Office of Naval Research (Grant No. N00014-21-1-2056)the Army Research Office (Grant No. W911NF-21-1-0180)+1 种基金the National Science Foundation MRSEC program (Grant No. DMR-1719875)supported in part by the Kwanjeong Fellowship from Kwanjeong Educational Foundation
文摘On-demand modification of the electronic band structures of high-mobility two-dimensional(2D)materials is of great interest for various applications that require rapid tuning of electrical and optical responses of solid-state devices.Although electrically tunable superlattice(SL)potentials have been proposed for band structure engineering of the Dirac electrons in graphene,the ultimate goal of engineering emergent quasiparticle excitations that can hybridize with light has not been achieved.We show that an extreme modulation of one-dimensional(1D)SL potentials in monolayer graphene produces ladder-like electronic energy levels near the Fermi surface,resulting in optical conductivity dominated by intersubband transitions(ISBTs).A specific and experimentally realizable platform comprising hBN-encapsulated graphene on top of a 1D periodic metagate and a second unpatterned gate is shown to produce strongly modulated electrostatic potentials.We find that Dirac electrons with large momenta perpendicular to the modulation direction are waveguided via total internal reflections off the electrostatic potential,resulting in flat subbands with nearly equispaced energy levels.The predicted ultrastrong coupling of surface plasmons to electrically controlled ISBTs is responsible for emergent polaritonic quasiparticles that can be optically probed.Our study opens an avenue for exploring emergent polaritons in 2D materials with gate-tunable electronic band structures.
基金Supported by the National Natural Science Foundation of China(No.61601296,61701295)the Science and Technology Innovation ActionPlan Project of Shanghai Science and Technology Commission(No.20511103500)the Talent Program of Shanghai University of Engineer-ing Science(No.2018RC43)。
文摘An interference suppression design scheme based on conjugate weighted butterfly interleaving mapping(CWBIM)is proposed for inter-carrier interference(ICI)and inter-subband interference(IBI)in the received signals of universal filtered multi-carrier(UFMC)systems.It applies an interleaving mapping operation to subtract the interference coefficients of adjacent terms in ICI and IBI twice,thereby achieving suppression effects similar to the self-cancellation(SC)algorithm while maintaining the original data transmission efficiency.Meanwhile,conjugate and complex weighting operations can effectively suppress the impact of phase rotation errors in high-speed mobile channel environments,thereby further improving the bit error rate(BFR)performance of the system,Moreover,butterfly operation can effectively control the computational complexity of the interleaving mapping process.Theoretical analysis and simulation results show that,compared with the PSC-UFMC algorithm,the CWBIM-UFMC scheme proposed in this paper can effectively suppress ICI and IBI in the received signal without compromising data transmission efficiency and reducing computational complexity,thereby achieving good BER performance of the system.
文摘Effects of LO-phonon contribution on the electronic and the optical properties are investigated in a Cdo.sZno.2 Se/ZnSe quantum dot in the presence of magnetic field strength. The magneto-polaron induced hydro- genic binding energy as a function of dot radius in the wide band gap quantum dot is calculated. The oscilla- tor strength and the spontaneous lifetime are studied taking into account the spatial confinement, magnetic field strength and the phonon contribution. Numerical calculations are carried out using variational formulism within the single band effective mass approximation. The optical properties are computed with the compact density matrix method. The magneto-polaron induced optical gain as a function of photon energy is observed. The results show that the optical telecommunication wavelength in the fiber optic communications can be achieved using CdSe/ZnSe semiconductors and it can be tuned with the proper applications of external perturbations.
基金Project supported by the National Natural Science Foundation of China(No.61764012)
文摘Based on the effective mass approximation, the Schrodinger equation and Poisson equation in GaAs/AlGaAs multi-quantum wells(MQWs) are self-consistently solved to obtain the wave functions and energy levels of electrons in the conduction band for the ground first excited state by considering a lateral electric field(LEF). Then, the effects of size, ternary mixed crystal, doping concentration, and temperature on linear and nonlinear intersubband optical absorption coefficients(IOACs), and refractive index changes(RICs) due to the transition between ground states and the first excited states of electrons are discussed based on Fermi’s golden rule. The results show that, under a fixed LEF, with increase of A1 composition and doping concentration, the IOACs produce a red shift. With increases of both widths of the wells and barriers IOACs appear as blue shifts and their amplitudes increase, but the barrier width change is much more important to affect nonlinear IOACs, whereas increasing the temperature results in a blue shift first and then a red shift of IOACs. When the other parameters are fixed but there is an increase in the LEF, IOACs occur with a blue shift, and the RICs have similar properties.