MOCVD GaAs/AIGaAs Multiquantum Well Structures and Observation upon the Intersubband Absorption

This paper presents Atmospheric Pressure Metalorganic Chemical Vapor Deposition(AP-MOCVD) growth of GaAs/Al-xGa_(1-x)As multiquantum wells for the study of intersubband transition.The multiple quantum well structures are characterized by using cross-sectional transmission electron microscopy(TEM) and low temperature photoluminescence(PL),which are in consistent with the designed parameters.The in- frared absorption from intersubband transitions between the bounded- ground state and the extended excited state in GaAs/AtGaAs quantum wells shows peak at 10 μm with FWHM 250 cm^(-1).The absorption peak positions are in agreement with the calculated results based on the envelope function approximation.

Hydrogenic donor impurity states and intersubband optical absorption spectra of monolayer transition metal dichalcogenides in dielectric environments

The hydrogenic donor impurity states and intersubband optical absorption spectra in monolayer transition metal dichalcogenides(ML TMDs) under dielectric environments are theoretically investigated based on a two-dimensional(2D)nonorthogonal associated Laguerre basis set. The 2D quantum confinement effect together with the strongly reduced dielectric screening results in the strong attractive Coulomb potential between electron and donor ion, with exceptionally large impurity binding energy and huge intersubband oscillator strength. These lead to the strong interaction of the electron with light in a 2D regime. The intersubband optical absorption spectra exhibit strong absorption lines of the non-hydrogenic Rydberg series in the mid-infrared range of light. The strength of the Coulomb potential can be controlled by changing the dielectric environment. The electron affinity difference leads to charge transfer between ML TMD and the dielectric environment, generating the polarization-electric field in ML TMD accompanied by weakening the Coulomb interaction strength. The larger the dielectric constant of the dielectric environment, the more the charge transfer is, accompanied by the larger polarization-electric field and the stronger dielectric screening. The dielectric environment is shown to provide an efficient tool to tune the wavelength and output of the mid-infrared intersubband devices based on ML TMDs.

Intersubband optical absorption of electrons in double parabolic quantum wells of Al_xGa_(1-x)As/Al_yGa_(1-y)As

Some realizable structures of double parabolic quantum wells（DPQWs） consisting of Al_xGa_（1-x）As/Al_yGa_（1-y）As are constructed to discuss theoretically the optical absorption due to the intersubband transition of electrons for both symmetric and asymmetric cases with three energy levels of conduction bands. The electronic states in these structures are obtained using a finite element difference method. Based on a compact density matrix approach, the optical absorption induced by intersubband transition of electrons at room temperature is discussed. The results reveal that the peak positions and heights of intersubband optical absorption coefficients（IOACs） of DPQWs are sensitive to the barrier thickness, depending on Al component. Furthermore, external electric fields result in the decrease of peak, and play an important role in the blue shifts of absorption spectra due to electrons excited from ground state to the first and second excited states. It is found that the peaks of IOACs are smaller in asymmetric DPQWs than in symmetric ones. The results also indicate that the adjustable extent of incident photon energy for DPQW is larger than for a square one of a similar size. Our results are helpful in experiments and device fabrication.

Optical absorption via intersubband transition of electrons in GaAs/Al_xGa_(1-x)As multi-quantum wells in an electric field

Based on the effective mass approximation, the Schrodinger equation and Poisson equation in GaAs/AlGaAs multi-quantum wells(MQWs) are self-consistently solved to obtain the wave functions and energy levels of electrons in the conduction band for the ground first excited state by considering a lateral electric field(LEF). Then, the effects of size, ternary mixed crystal, doping concentration, and temperature on linear and nonlinear intersubband optical absorption coefficients(IOACs), and refractive index changes(RICs) due to the transition between ground states and the first excited states of electrons are discussed based on Fermi’s golden rule. The results show that, under a fixed LEF, with increase of A1 composition and doping concentration, the IOACs produce a red shift. With increases of both widths of the wells and barriers IOACs appear as blue shifts and their amplitudes increase, but the barrier width change is much more important to affect nonlinear IOACs, whereas increasing the temperature results in a blue shift first and then a red shift of IOACs. When the other parameters are fixed but there is an increase in the LEF, IOACs occur with a blue shift, and the RICs have similar properties.