Li-N dual-doped ZnO films [ZnO：（Li,N）] with Li doping concentrations of 3 at.%-5 at.% were grown on a glass substrate using an ion beam enhanced deposition （IBED） method. An optimal p-type ZnO：（Li,N） film with...Li-N dual-doped ZnO films [ZnO：（Li,N）] with Li doping concentrations of 3 at.%-5 at.% were grown on a glass substrate using an ion beam enhanced deposition （IBED） method. An optimal p-type ZnO：（Li,N） film with the resistivity of 11.4 Ω·cm was obtained by doping 4 at.% of Li and 5 sccm flow ratio of N2. The ZnO：（Li,N） films-exhibited a wurtzite structure and good transmittance in the visible region. The p-type conductive mechanism of ZnO：（Li,N） films are attributed to the Li substitute Zn site （Lizn） acceptor. N doping in ZnO can forms the Lii-No complex, which depresses the compensation of Li occupy interstitial site （Lii） donors for Lizn acceptor and helps to achieve p-type ZnO：（Li,N） films. Room temperature photoluminescence measurements indicate that the UV peak （381 nm） is due to the shallow acceptors Lizn in the p-type ZnO：（Li,N） films. The band gap of the ZnO：（Li,N） films has a red-shift after p-type doping.展开更多
A new method for preparation of hard TiN films has been developed by using electron beam evaporation-deposition of Ti and bombardment with 40 keV Xe^+ ion beam in a N_2 gas environment.The synthesized TiN films were s...A new method for preparation of hard TiN films has been developed by using electron beam evaporation-deposition of Ti and bombardment with 40 keV Xe^+ ion beam in a N_2 gas environment.The synthesized TiN films were superior to PVD and CVD ones in respects of improved adhesion to substrate and low preparing temperature.They exhibited good wear resistance and high hardness up to 2200 kg/mm^2.Some industrial applications have been reported.展开更多
In this paper, blood compatibility of carbonnitride film synthesized by ion beam enhanced deposition is studied. Clotting time measurement, platelet adhesion test and surface energy determination were performed to eva...In this paper, blood compatibility of carbonnitride film synthesized by ion beam enhanced deposition is studied. Clotting time measurement, platelet adhesion test and surface energy determination were performed to evaluate the interaction between blood and material. The results show that carbonnitride film has better blood compatibility than titanium, and may be promising in biomaterial filed.展开更多
The TiN films were synthesized with an alternate process of depositing titanium from a E-gun evaporation source and 40 keV N^+ bombarding onto the target.It is shown from the composi- tion analysis and structure inves...The TiN films were synthesized with an alternate process of depositing titanium from a E-gun evaporation source and 40 keV N^+ bombarding onto the target.It is shown from the composi- tion analysis and structure investigations using RBS,AES,TEM,XPS and X-ray diffraction spectrum that the formed fihns are mainly composed of TiN phase with grain size of 30—40 nm and without preferred orientation,the nitrogen content in the film is much less than that in case without N^+ bombarding,and an intermixed region about 40 nm thick exists between the film and the substrate.The films exhibt high microhardness and low friction. ZHOU Jiankun,Ion Beam Laboratory,Shanghai Institute of Metallurgy,Academia Sinica, Shanghai 200050,China展开更多
Self heating effects in silicon on insulator (SOI) devices limit the applicability of SOI materials in electronics in cases where high power dissipation is expected. AlN film as a potential candidate for buried insula...Self heating effects in silicon on insulator (SOI) devices limit the applicability of SOI materials in electronics in cases where high power dissipation is expected. AlN film as a potential candidate for buried insulator material in SOI structures is investigated. Ion beam enhanced deposition (IBED) is used to manufacture large area AlN films. SIMS measurements indicate the formation of AlN films. The characterization of the films reveals that the quality of the films strongly depends on the evaporation rate of Al. For the film with high quality deposited at 0.05 nm/s, it has higher component of N, excellent dielectric property and a smoother surface with roughness RMS value of 0.13 nm, and can be bonded directly at room temperature by the smart cut process. SOI structure with the AlN film as buried insulator has formed successfully for the first time, which is confirmed by XTEM micrograph.展开更多
文摘Li-N dual-doped ZnO films [ZnO：（Li,N）] with Li doping concentrations of 3 at.%-5 at.% were grown on a glass substrate using an ion beam enhanced deposition （IBED） method. An optimal p-type ZnO：（Li,N） film with the resistivity of 11.4 Ω·cm was obtained by doping 4 at.% of Li and 5 sccm flow ratio of N2. The ZnO：（Li,N） films-exhibited a wurtzite structure and good transmittance in the visible region. The p-type conductive mechanism of ZnO：（Li,N） films are attributed to the Li substitute Zn site （Lizn） acceptor. N doping in ZnO can forms the Lii-No complex, which depresses the compensation of Li occupy interstitial site （Lii） donors for Lizn acceptor and helps to achieve p-type ZnO：（Li,N） films. Room temperature photoluminescence measurements indicate that the UV peak （381 nm） is due to the shallow acceptors Lizn in the p-type ZnO：（Li,N） films. The band gap of the ZnO：（Li,N） films has a red-shift after p-type doping.
文摘A new method for preparation of hard TiN films has been developed by using electron beam evaporation-deposition of Ti and bombardment with 40 keV Xe^+ ion beam in a N_2 gas environment.The synthesized TiN films were superior to PVD and CVD ones in respects of improved adhesion to substrate and low preparing temperature.They exhibited good wear resistance and high hardness up to 2200 kg/mm^2.Some industrial applications have been reported.
文摘In this paper, blood compatibility of carbonnitride film synthesized by ion beam enhanced deposition is studied. Clotting time measurement, platelet adhesion test and surface energy determination were performed to evaluate the interaction between blood and material. The results show that carbonnitride film has better blood compatibility than titanium, and may be promising in biomaterial filed.
文摘The TiN films were synthesized with an alternate process of depositing titanium from a E-gun evaporation source and 40 keV N^+ bombarding onto the target.It is shown from the composi- tion analysis and structure investigations using RBS,AES,TEM,XPS and X-ray diffraction spectrum that the formed fihns are mainly composed of TiN phase with grain size of 30—40 nm and without preferred orientation,the nitrogen content in the film is much less than that in case without N^+ bombarding,and an intermixed region about 40 nm thick exists between the film and the substrate.The films exhibt high microhardness and low friction. ZHOU Jiankun,Ion Beam Laboratory,Shanghai Institute of Metallurgy,Academia Sinica, Shanghai 200050,China
文摘Self heating effects in silicon on insulator (SOI) devices limit the applicability of SOI materials in electronics in cases where high power dissipation is expected. AlN film as a potential candidate for buried insulator material in SOI structures is investigated. Ion beam enhanced deposition (IBED) is used to manufacture large area AlN films. SIMS measurements indicate the formation of AlN films. The characterization of the films reveals that the quality of the films strongly depends on the evaporation rate of Al. For the film with high quality deposited at 0.05 nm/s, it has higher component of N, excellent dielectric property and a smoother surface with roughness RMS value of 0.13 nm, and can be bonded directly at room temperature by the smart cut process. SOI structure with the AlN film as buried insulator has formed successfully for the first time, which is confirmed by XTEM micrograph.
