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Simulation Investigation on Particle Transmission Characteristics of Two Different Ion Barrier Films
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作者 李野 付申成 +3 位作者 向嵘 王国政 端木庆铎 田景全 《Defence Technology(防务技术)》 SCIE EI CAS 2008年第4期268-271,共4页
The simulation calculation and analysis of electron transmittance and ion stopping power for ion barrier films (IBFs) of Al2O3 and SiO2 are performed by Monte Carlo methods. The interaction model between particles and... The simulation calculation and analysis of electron transmittance and ion stopping power for ion barrier films (IBFs) of Al2O3 and SiO2 are performed by Monte Carlo methods. The interaction model between particles and solids are described. It is found that at the same conditions,the electron transmittance for SiO2 IBF is relatively higher than that of Al2O3 IBF,and the ion stopping power of SiO2 IBF is relatively lower than that of Al2O3 by Monte Carlo simulations. It is also indicated that SiO2 is one of the ideal materials for fabricating IBFs. 展开更多
关键词 真空电子学 电子物理学 光电子学 激光
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Characterization of ion-implanted 4H-SiC Schottky barrier diodes
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作者 王守国 张岩 +1 位作者 张义门 张玉明 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第1期456-460,共5页
Ion-implantation layers are fabricated by multiple nitrogen ion-implantations (3 times for sample A and 4 times for sample B) into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by u... Ion-implantation layers are fabricated by multiple nitrogen ion-implantations (3 times for sample A and 4 times for sample B) into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I-V and C V characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs) fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors (MESFETs), and SiC static induction transistors (SITs). The parameters of the diodes are extracted from the forward I-V and C-V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance Rs are 11.9 and 1.0 kf~ respectively. The values of barrier height φB of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I-V method and 1.14 and 0.93 eV obtained by the C-V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2% and 4% respectively extracted from C V testing results. 展开更多
关键词 silicon carbide ion-implantation Schottky barrier diodes barrier height
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Theoretical analysis of ion kinetic energies and DLC film deposition by CH4+ Ar (He) dielectric barrier discharge plasmas
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作者 刘艳红 张家良 +2 位作者 马腾才 李建 刘东平 《Chinese Physics B》 SCIE EI CAS CSCD 2007年第9期2809-2813,共5页
The kinetic energy of ions in dielectric barrier discharge plasmas are analysed theoretically using the model of binary collisions between ions and gas molecules. Langevin equation for ions in other gases, Blanc law f... The kinetic energy of ions in dielectric barrier discharge plasmas are analysed theoretically using the model of binary collisions between ions and gas molecules. Langevin equation for ions in other gases, Blanc law for ions in mixed gases, and the two-temperature model for ions at higher reduced field are used to determine the ion mobility. The kinetic energies of ions in CH4 + Ar(He) dielectric barrier discharge plasma at a fixed total gas pressure and various Ar (He) concentrations are calculated. It is found that with increasing Ar (He) concentration in CH4 + Ar (He) from 20% to 83%, the CH4+ kinetic energy increases from 69.6 (43.9) to 92.1 (128.5)eV, while the Ar+ (He+) kinetic energy decreases from 97 (145.2) to 78.8 (75.5)eV. The increase of CH4+ kinetic energy is responsible for the increase of hardness of diamond-like carbon films deposited by CH4 + Ar (He) dielectric barrier discharge without bias voltage over substrates. 展开更多
关键词 ion energy dielectric barrier discharge diamond-like carbon deposition
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Analytical model for capacitance-voltage characteristics of ion-implanted 4H silicon carbide Schottky barrier diodes
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作者 王守国 张岩 《Journal of Harbin Institute of Technology(New Series)》 EI CAS 2011年第6期44-47,共4页
In order to undertake theory analysis in the application area of switching,frequency and power devices,an analytical model for capacitance-voltage (C-V) characteristics of ion-implanted 4H silicon carbide (SiC) Schott... In order to undertake theory analysis in the application area of switching,frequency and power devices,an analytical model for capacitance-voltage (C-V) characteristics of ion-implanted 4H silicon carbide (SiC) Schottky barrier diodes (SBDs) was investigated.This model was established by considering the effects of incomplete ionization of nitrogen in 4H-SiC,the Poole-Frenkel on the ionization energy,and the ion-implanted nitrogen donor profiles.The simulation process is discussed in detail for two multiple nitrogen ion-implanted 4H-SiC SBDs (three and four fold ion-implantations) designed and fabricated in the experiments using this model at different activation rates.An agreement between the modeled C-V curves and the measured results for two ion-implanted 4H-SiC SBDs fabricated is shown.This capacitance model has the potential to be used to simulate and design ion-implanted SiC devices concerned in the future. 展开更多
关键词 silicon carbide CAPACITANCE Schottky barrier diodes ion implantation
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Performance of Metal and Acid Ions Remediation in Contaminated Soils by Electrokinetics with Chitosan Permeable Reactive Barrier
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作者 杜勇立 马德青 +2 位作者 张燕青 单文盼 黄满红 《Journal of Donghua University(English Edition)》 EI CAS 2017年第4期607-612,共6页
Metal and acid ions contamination of soil in China is serious. To find an efficient solution for remediating the combined pollution,electrokinetics( EK) coupled with chitosan( CTS)permeable reactive barrier( EK/CPRB) ... Metal and acid ions contamination of soil in China is serious. To find an efficient solution for remediating the combined pollution,electrokinetics( EK) coupled with chitosan( CTS)permeable reactive barrier( EK/CPRB) was used to investigate the performances of metal and acid ions remediation. Adsorption characteristics of Zn^(2+),Fe^(3+),Ca^(2+),SO_4^(2-) and NO_3^- onto CTS were also conducted. The results showed the sorption of Zn^(2+),Fe^(3+),Ca^(2+),SO_4^(2-) and NO_3^- on CTS could be well described by Freundlich model. When the CTS dosage is 8 g,the total removal efficiency for Zn^(2+),Fe^(3+),Ca^(2+),SO_4^(2-) and NO_3^- is 86. 8%,90. 2%,92. 4%,90. 0% and 82. 5%,respectively. CTS enhanced ions remediation efficiencies significantly compared with the single EK system,especially for SO_4^(2-) and NO_3^-. The results indicate EK/CPRB system is suitable for the remediation of soil contaminated by both metal ions and acid ions. 展开更多
关键词 electrokinetics acid ions metal ions Chitosan permeable reactive barrier REMEDIATion
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Flow Shear Stabilization of Ion Temperature Gradient Modes in an Internal Transport Barrier
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作者 董家齐 《Plasma Science and Technology》 SCIE EI CAS CSCD 2003年第2期1683-1688,共6页
Ion temperature gradient (ITG) driven instability is studied withgyro-kinetic theory in an internal transport barrier (ITB) of tokamak plasmas. The stabilizationeffects of a parallel velocity shear on the modes are in... Ion temperature gradient (ITG) driven instability is studied withgyro-kinetic theory in an internal transport barrier (ITB) of tokamak plasmas. The stabilizationeffects of a parallel velocity shear on the modes are investigated. It is found that the modestructures and stability properties, as well as the effects of a velocity shear, in an ITB aresignificantly different from that in off-ITB regions. 展开更多
关键词 tokamak plasma ion temperature gradient internal transport barrier
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Evaluation of influence of surface barrier in solid on ion reflection by bipartition model of ion transport
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作者 YANGDai-Lun WUZhang-Wen 《Nuclear Science and Techniques》 SCIE CAS CSCD 2004年第2期89-94,共6页
The influence of surface barrier of solid upon ion reflection was studied in a few papers of other authors by using the Monte-Carlo simulation. Based on the bipartition model of ion transport, a new analytical theory ... The influence of surface barrier of solid upon ion reflection was studied in a few papers of other authors by using the Monte-Carlo simulation. Based on the bipartition model of ion transport, a new analytical theory has been developed instead of the MC simulation, due to important implication of the effect for fusion research. In the present paper we have calculated the number reflection coefficients of H+, D+, He and T+ normally incident on C,Al and Cu for ion energy from several eV to one hundred keV respectively. Our computational results accorded with the MC simulation. The results have shown that the effect of surface barrier on ion reflection becomes evident when the energy of incident ions is lower than one keV. In particular, for the ion energy from several eV to one hun dred eV, the discrepancies of number reflection coefficients can increase up to 0.1~0.3, showing this influence to be very important. 展开更多
关键词 表面势垒 离子反射 MONTE-CARLO法 喷涂屈服
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Modified Classical Over Barrier Model for Multi-Charged Ion in Collisions with Multiple Electron Target at Energies Below 1 keV/u
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作者 K.ISHII K.OKUNO 《Plasma Science and Technology》 SCIE EI CAS CSCD 2010年第3期369-371,共3页
Charge transfer cross sections for Kr^q+ with Ne are calculated quantitatively by using modified classical over barrier model in order to clarify energy dependence of charge transfer cross sections in low energy regi... Charge transfer cross sections for Kr^q+ with Ne are calculated quantitatively by using modified classical over barrier model in order to clarify energy dependence of charge transfer cross sections in low energy region. Essential of this model is taking the induced dipole potential into consideration. As a result, this calculation can reproduce systematic energy dependence of experimental results. This suggests that the bending trajectory of the projectile due to an induced dipole potential should be considered to describe pictures of collisions at low energy regime below 1 keV/u. 展开更多
关键词 atomic processes highly charged ion charge transfer classical over barrier
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Evaluation of trans-ferulic acid degradation by dielectric barrier discharge plasma combined with ozone in wastewater with different water quality conditions 被引量:2
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作者 Jingyu REN Nan JIANG +3 位作者 Kefeng SHANG Na LU Jie LI Yan WU 《Plasma Science and Technology》 SCIE EI CAS CSCD 2019年第2期68-77,共10页
In this study, dielectric barrier discharge plasma and ozone(O_3) were combined to synergistically degrade trans-ferulic acid(FA), and the effect of water quality on FA degradation was studied. The results showed that... In this study, dielectric barrier discharge plasma and ozone(O_3) were combined to synergistically degrade trans-ferulic acid(FA), and the effect of water quality on FA degradation was studied. The results showed that 96.9% of FA was degraded after 40 min treatment by the plasma/O_3 process. FA degradation efficiency increased with the p H values. The presence of suspended solid and humic acid inhibited FA degradation. FA degradation efficiency increased as the water temperature increased to 30 °C. However, the further increase in water temperature was adverse for FA degradation. Effects of common inorganic ions on FA degradation were also investigated. The addition of Cl^- inhibited the FA degradation, whileCO_3^(2-) had both negative and positive influences on FA degradation.NO_3^- andSO_4^(2-) did not have significant effect on FA degradation. Fe^(3+)and Cu^(2+)benefited FA degradation through the Fenton-like and catalytic ozonation reactions. 展开更多
关键词 dielectric barrier DISCHARGE OZONE trans-ferulic acid water quality INORGANIC ions
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HL-2A装置高β_(N)双输运垒实验的集成分析
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作者 李正吉 陈伟 +11 位作者 孙爱萍 于利明 王卓 陈佳乐 许健强 李继全 石中兵 蒋敏 李永高 何小雪 杨曾辰 李鉴 《物理学报》 SCIE EI CAS CSCD 北大核心 2024年第6期250-257,共8页
HL-2A托卡马克装置在中性束加热条件下获得了稳定的归一化环向比压(β_(N))大于2.5的等离子体,并且实现了瞬态β_(N)=3.05、归一化密度(n_(e,1)/n_(e,G))~0.6、储能(WE)~46 kJ和高约束因子(H_(98))~1.65的高约束性能.本文使用集成模拟平... HL-2A托卡马克装置在中性束加热条件下获得了稳定的归一化环向比压(β_(N))大于2.5的等离子体,并且实现了瞬态β_(N)=3.05、归一化密度(n_(e,1)/n_(e,G))~0.6、储能(WE)~46 kJ和高约束因子(H_(98))~1.65的高约束性能.本文使用集成模拟平台OMFIT对β_(N)=2.83和β_(N)=3.05时刻的等离子体进行了集成模拟,计算得到的WE,n_(e,1)/n_(e,G),H_(98)和β_(N)等与实验参数基本一致,并通过计算发现两种情况下自举电流份额(fBS)分别约达到45%和46%.此外,还进一步分析了HL-2A装置形成离子温度内部输运垒(ITB)的原因:快离子和E×B剪切流使得芯部湍流输运被抑制,改善了约束,从而形成了离子温度ITB.离子温度的ITB与H模边缘输运垒相互协同形成了高β_(N)的等离子体. 展开更多
关键词 HL-2A 高β_(N) OMFIT集成模拟 快离子 内部运垒
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Engineering Sodium Metal Anode with Sodiophilic Bismuthide Penetration for Dendrite-Free and High-Rate Sodium-Ion Battery 被引量:3
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作者 Wanyu Zhao Min Guo +8 位作者 Zhijun Zuo Xiaoli Zhao Huanglin Dou Yijie Zhang Shiying Li Zichen Wu Yayun Shi Zifeng Ma Xiaowei Yang 《Engineering》 SCIE EI 2022年第4期87-94,共8页
Sodium(Na)metal batteries with a high volumetric energy density that can be operated at high rates are highly desirable.However,an uneven Na-ion migration in bulk Na anodes leads to localized deposition/dissolution of... Sodium(Na)metal batteries with a high volumetric energy density that can be operated at high rates are highly desirable.However,an uneven Na-ion migration in bulk Na anodes leads to localized deposition/dissolution of sodium during high-rate plating/stripping behaviors,followed by severe dendrite growth and loose stacking.Herein,we engineer the Na hybrid anode with sodiophilic Na_(3)Bi-penetration to develop the abundant phase-boundary ionic transport channels.Compared to intrinsic Na,the reduced adsorption energy and ion-diffusion barrier on Na_(3)Bi ensure even Na^(+)nucleation and rapid Na^(+)migration within the hybrid electrode,leading to uniform deposition and dissolution at high current densities.Furthermore,the bismuthide enables compact Na deposition within the sodiophilic framework during cycling,thus favoring a high volumetric capacity.Consequently,the obtained anode was endowed with a high current density(up to 5 mA∙cm^(−2)),high areal capacity(up to 5 mA∙h∙cm^(−2)),and long-term cycling stability(up to 2800 h at 2 mA∙cm^(−2)). 展开更多
关键词 Sodium metal anode Dendrite-free Compact electrodeposition Sodiophilic bismuthide ion diffusion barrier
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近Bohr速度129Xeq+离子入射Ta靶发射近红外光谱线
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作者 王益军 张颖 +9 位作者 张小安 周贤明 梅策香 梁昌慧 曾利霞 李耀宗 柳钰 向前兰 孟惠 张艳宁 《原子与分子物理学报》 北大核心 2024年第6期84-91,共8页
用动能一定的高电荷态^(129)Xe^(q+)(17≤q≤27)离子,分别入射洁净的Ta靶表面,测量中性化的激发态Xe原子从组态5p^(5)(^(2)P°_(3/2))nl退激到组态5p^(5)(^(2)P°_(3/2))ml’过程中辐射的近红外光谱线.实验结果表明:多激发态的... 用动能一定的高电荷态^(129)Xe^(q+)(17≤q≤27)离子,分别入射洁净的Ta靶表面,测量中性化的激发态Xe原子从组态5p^(5)(^(2)P°_(3/2))nl退激到组态5p^(5)(^(2)P°_(3/2))ml’过程中辐射的近红外光谱线.实验结果表明:多激发态的空心原子退激发射其特征光谱线,部分典型的跃迁按照阶梯方式退激.Xe原子发射的谱线的单粒子荧光产额和激发的Ta原子发射谱线的单粒子荧光产额随入射离子电荷态的增加而增加,其增加的趋势与入射离子携带的势能随电荷态增加的趋势一致.证明在近Bohr速度的能区,经典过垒模型是成立的. 展开更多
关键词 玻尔速度 高电荷态离子 经典过垒模型 近红外光谱线 空心原子
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非溶剂组分对有机载膜及防离子反馈MCP性能的影响
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作者 杨凯莉 张妮 +4 位作者 孙超 朱宇峰 郝子恒 郭欣 李朋博 《应用光学》 CAS 北大核心 2024年第4期828-833,共6页
有机载膜作为制备Al_(2)O_(3)防离子反馈膜的临时衬底,其膜层致密性及厚度显著影响Al_(2)O_(3)膜的致密性、电子透过性和防离子反馈微通道板(microchannel plate,MCP)的电特性。将非溶剂组分由超纯水改为NaCl溶液,通过金相显微镜及台阶... 有机载膜作为制备Al_(2)O_(3)防离子反馈膜的临时衬底,其膜层致密性及厚度显著影响Al_(2)O_(3)膜的致密性、电子透过性和防离子反馈微通道板(microchannel plate,MCP)的电特性。将非溶剂组分由超纯水改为NaCl溶液,通过金相显微镜及台阶仪分析不同NaCl溶液质量浓度所制有机载膜的膜层致密性及厚度;并测量相应有机载膜应用所制Al_(2)O_(3)膜的致密性、电子透过性及防离子反馈MCP的电特性。研究发现,NaCl溶液的质量浓度为0.05 g·ml^(-1)时,有机载膜具备高致密性;且制备的Al_(2)O_(3)防离子反馈膜致密,MCP的增益损失量较小,是最佳的非溶剂组分质量浓度。 展开更多
关键词 防离子反馈微通道板 有机载膜 非溶剂组分 电子透过特性 电特性
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CrSi_(2)P_(4)和CrSiGeP_(4)单层作为锂离子电池阳极材料的第一性原理研究
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作者 周永生 白丽娜 《高师理科学刊》 2024年第11期42-49,共8页
设计优良的电极材料是提高锂离子电池性能的关键.二维材料作为金属离子电池的电极,具有存容量高、电子/离子电导性能优异的特征,在储能领域显示出广阔的应用前景.采用第一性原理计算,探索二维CrSi_(2)P_(4)和CrSiGeP_(4)单层作为锂离子... 设计优良的电极材料是提高锂离子电池性能的关键.二维材料作为金属离子电池的电极,具有存容量高、电子/离子电导性能优异的特征,在储能领域显示出广阔的应用前景.采用第一性原理计算,探索二维CrSi_(2)P_(4)和CrSiGeP_(4)单层作为锂离子电池电极材料的可行性,并阐明这种结构在提高电池性能方面的优势.基于此,建立了CrSi_(2)P_(4)和CrSiGeP_(4)单层模型,并对其电子特征进行了分析.结果表明,二维Cr Si_(2)P_(4)单层是窄带隙半导体材料,且具有良好的稳定性和较高的离子电导能力(锂离子扩散能垒为0.17 eV);二维CrSiGeP_(4)单层的带隙比Cr Si_(2)P_(4)单层小(0.14 eV),其结构稳定性和离子电导能力(0.72 eV)都低于CrSi_(2)P_(4)单层.因此,CrSi_(2)P_(4)单层有望成为一种极具吸引力的锂离子电池电极材料,为新材料在电池领域的应用提供了前期理论探索. 展开更多
关键词 第一性原理计算 电极材料 二维材料 锂离子电池 扩散能垒
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Parameter analysis for gate metal-oxide-semiconductor structures of ion-implanted 4H silicon carbide metal-semiconductor field-effect transistors
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作者 王守国 张义门 张玉明 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第9期510-514,共5页
From the theoretical analysis of the thermionic emission model of current-voltage characteristics, this paper extracts the parameters for the gate Schottky contact of two ion-implanted 4H-SiC metal-semiconductor field... From the theoretical analysis of the thermionic emission model of current-voltage characteristics, this paper extracts the parameters for the gate Schottky contact of two ion-implanted 4H-SiC metal-semiconductor field-effect transistors (sample A and sample B for three and four times multiple ion-implantation channel region respectively) fabricated in the experiment, including the ideality factor, the series resistance, the zero-field barrier height, the interface oxide capacitance, the interface state density distribution, the neutral level of interface states and the fixed space charge density. The methods to improve the interface of the ion-implanted Schottky contact are given at last. 展开更多
关键词 silicon carbide interface states ion-implantation barrier height
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Influence of Ga^+ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers
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作者 祁先进 王寅岗 +2 位作者 缪雪飞 李子全 黄一中 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第5期388-392,共5页
This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates. It investigates the thermal relaxations of both non-irradiated and Ca^+ ion irr... This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates. It investigates the thermal relaxations of both non-irradiated and Ca^+ ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field. The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ca^+ ion irradiated CoFe/IrMn bilayers. Exchange bias field is also found to be smaller upon irradiation at higher ion dose. This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation. 展开更多
关键词 thermal relaxation exchange bias ion irradiation energy barrier
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Improvement of the Uniformity of Surface Barrier Discharge in Atmospheric Nitrogen by Spark Discharge 被引量:1
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作者 高亮 齐冰 +1 位作者 黄建军 汝丽丽 《Plasma Science and Technology》 SCIE EI CAS CSCD 2010年第6期668-672,共5页
A spark generator was employed to assist surface barrier discharge (SBD) in nitrogen at atmospheric pressure. The influence of spark discharge on the SBD electrical behavior is investigated by means of volt-ampere c... A spark generator was employed to assist surface barrier discharge (SBD) in nitrogen at atmospheric pressure. The influence of spark discharge on the SBD electrical behavior is investigated by means of volt-ampere characteristics. Also, the electron density of plasma in the filament of each SBD arrangement is determined by plasma radiation method. It is found that the filaments in spark-assistant SBD are much stronger, while the corresponding mean electron density is much lower. Results show that the spark generator can improve the uniformity of SBD in atmospheric nitrogen in a particular range of applied frequency. 展开更多
关键词 surface barrier discharge spark preionization plasma radiation ion density
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DEGRADATION DUE TO ENERGY PULSE IN HIGH-ENERGY ZnO VARISTORS
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作者 Zhang Shugao Huang Baiyun Fang Xunhua (Powder Metallurgy Research Institute, Central South University of Technology, Changsha 410083, China)Ji Youzhang (Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China) 《Journal of Central South University》 SCIE EI CAS 1997年第2期113-116,共4页
The degradation phenomena due to the energy pulse in the high-energy ZnO varistors used for deexitation and overvoltage protection of hydroelectric generator are investigated. The energy pulse, obtained by releasing t... The degradation phenomena due to the energy pulse in the high-energy ZnO varistors used for deexitation and overvoltage protection of hydroelectric generator are investigated. The energy pulse, obtained by releasing the energy stored in an inductor, can be equivalent to the combination of the DC field components and the energy component. The variations of the characterized voltages, nonlinear coefficients and pre-breakdown V-A characteristics, increase with the number of the applied energy pulse. The asymmetrical variations of the electric properties of the high-energy ZnO varistors after the energy pulse arise from the deformation of the double Schottky barriers due to the ion migration occuring in the depletion layer and in the grain boundary. 展开更多
关键词 HIGH-ENERGY ZnO VARISTORS ENERGY PULSE DEGRADATion V-A characteristics GRAIN boundary barrier ion migration
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Projectile electron loss in collisions of light charged ions with helium
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作者 尹永智 王赟 陈熙萌 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第5期244-248,共5页
We investigate the single-electron loss processes of light charged ions (Li^1+,2+, C^2+,3+,5+, and O^2+,3+) in collisions with helium. To better understand the experimental results, we propose a theoretical m... We investigate the single-electron loss processes of light charged ions (Li^1+,2+, C^2+,3+,5+, and O^2+,3+) in collisions with helium. To better understand the experimental results, we propose a theoretical model to calculate the cross section of projectile electron loss. In this model, an ionization radius of the incident ion was defined under the classical over-barrier model, and we developed "strings" to explain the processes of projectile electron loss, which is similar with the molecular over-barrier model. Theoretical calculations are in good agreement with the experimental results for the cross section of single-electron loss and the ratio of double-to-single ionization of helium associated with one-electron loss. 展开更多
关键词 ion-atom collision over-barrier model electron loss
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Calculation of Interaction Potentials between Spherical and Deformed Nuclei
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作者 张高龙 张焕乔 +9 位作者 刘祖华 张春雷 林承键 杨峰 安广朋 贾会明 吴振东 徐新星 白春林 喻宁 《Chinese Physics Letters》 SCIE CAS CSCD 2007年第2期397-399,共3页
The interaction potential for spherical-deformed reaction partners is calculated. The shape, separation and orientation dependence of the interaction potential and fusion cross section of the system ^32S+^154Sm are i... The interaction potential for spherical-deformed reaction partners is calculated. The shape, separation and orientation dependence of the interaction potential and fusion cross section of the system ^32S+^154Sm are investigated within the double-folding model of the deformed nuclei. The effective nucleon-nucleon interaction is taken to be the M3Y-Reid potential. The density is considered for three terms of the expansion using the truncated multipole expansion method, which is a deformed Fermi shape With quadrupole and hexadecapole for the density distribution of ^154Sm. It is found for the interaction potential that the height and the position of barrier strongly depend on the deformations, the orientation angle of the deformed nucleus, and hence produce great effects on fusion cross section. The integrated fusion cross section is in good agreement with the experimental data. 展开更多
关键词 SCATTERING barrier FUSion U-238 MODEL ionS
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