采用密度泛函理论研究了M(M=In,Ir)原子修饰的M-Au(111)合金表面的稳定性,并选其最优模型探讨了合金表面的活性及其对巴豆醛的吸附。合金的几何构型、形成能和结合能等性质表明,In-Au(111)面的稳定性随In原子的间距增大而提高,Ir-Au(111...采用密度泛函理论研究了M(M=In,Ir)原子修饰的M-Au(111)合金表面的稳定性,并选其最优模型探讨了合金表面的活性及其对巴豆醛的吸附。合金的几何构型、形成能和结合能等性质表明,In-Au(111)面的稳定性随In原子的间距增大而提高,Ir-Au(111)面的稳定性随Ir原子的间距增大而降低。对于巴豆醛在MAu(111)面上的吸附,当其通过C=O吸附于合金表面的TopM位时,吸附能最大,吸附构型最稳定。从巴豆醛的结构变化、态密度、差分电荷密度以及Mulliken电荷布居等分析可以看出,稳定吸附构型的巴豆醛分子形变较大,电荷转移明显。其中,位于-7.04 e V至费米能级处的p、d轨道杂化,对体系的吸附具有重要贡献。分析比较In-Au(111)面与Ir-Au(111)面,发现后者的配体效应更佳,不仅具有更高的稳定性和活性,而且对于巴豆醛具有更强的吸附力。此外,相比于改性前的Au(111)面,M原子的修饰明显提升了金属表面的稳定性及吸附能力。展开更多
基于巴豆醛在M/Au(111)合金表面(M=In,Ir)垂直吸附的最稳定吸附结构,采用密度泛函理论对其不完全加氢的反应机理进行探究。从不同加氢机理下各基元反应的活化能、反应热计算以及构型变化分析中可知,巴豆醛在M/Au(111)面上均优先对距离...基于巴豆醛在M/Au(111)合金表面(M=In,Ir)垂直吸附的最稳定吸附结构,采用密度泛函理论对其不完全加氢的反应机理进行探究。从不同加氢机理下各基元反应的活化能、反应热计算以及构型变化分析中可知,巴豆醛在M/Au(111)面上均优先对距离合金表面较近的CO进行加氢,且以C为活性中心优先进行加氢为最优机理,其中第1步加氢反应的活化能较高,是该机理的控速步骤。反应物巴豆醛的O原子与合金的掺杂原子M形成较强的化学吸附,提高了M/Au(111)面对CO加氢的选择性。巴豆醛按最优机理加氢的基元反应中在In/Au(111)面上最高反应能垒为0.969 e V,比在Ir/Au(111)面的最高反应能垒1.332 e V低,因此认为In/Au合金对其不完全加氢有更好的催化活性。展开更多
The kinetics for hydrogen(H)adsorption on Ir(111)electrode has been studied in both HClO_(4) and H_(2)SO_(4) solutions by impedance spectroscopy.In HClO_(4),the adsorption rate for H adsorption on Ir(111)increases fro...The kinetics for hydrogen(H)adsorption on Ir(111)electrode has been studied in both HClO_(4) and H_(2)SO_(4) solutions by impedance spectroscopy.In HClO_(4),the adsorption rate for H adsorption on Ir(111)increases from 1.74×10^(-8)mol·cm^(-2)·s^(-1) to 3.47×10^(-7)mol·cm^(-2)·s^(-1) with the decrease of the applied potential from 0.2 V to 0.1 V(vs.RHE),which is ca.one to two orders of magnitude slower than that on Pt(111)under otherwise identical condition.This is explained by the stronger binding of water to Ir(111),which needs a higher barrier to reorient during the under potential deposition of H from hydronium within the hydrogen bonded water network.In H_(2)SO_(4),the adsorption potential is ca.200 mV negatively shifted,accompanied by a decrease of adsorption rate by up to one order of magnitude,which is explained by the hindrance of the strongly adsorbed sulfate/bisulfate on Ir(111).Our results demonstrate that under electrochemical environment,H adsorption is strongly affected by the accompanying displacement and reorientation of water molecules that initially stay close to the electrode surface.展开更多
Iridium is a promising substrate for self-limiting growth of graphene. However, single-crystalline graphene can only be fabricated over 1120 K. The weak interaction between graphene and Ir makes it challenging to grow...Iridium is a promising substrate for self-limiting growth of graphene. However, single-crystalline graphene can only be fabricated over 1120 K. The weak interaction between graphene and Ir makes it challenging to grow graphene with a single orientation at a relatively low temperature. Here, we report the growth of large-scale, single-crystalline graphene on Ir(111) substrate at a temperature as low as 800 K using an oxygen-etching assisted epitaxial growth method. We firstly grow polycrystalline graphene on Ir. The subsequent exposure of oxygen leads to etching of the misaligned domains.Additional growth cycle, in which the leftover aligned domain serves as a nucleation center, results in a large-scale and single-crystalline graphene layer on Ir(111). Low-energy electron diffraction, scanning tunneling microscopy, and Raman spectroscopy experiments confirm the successful growth of large-scale and single-crystalline graphene. In addition, the fabricated single-crystalline graphene is transferred onto a SiO_2/Si substrate. Transport measurements on the transferred graphene show a carrier mobility of about 3300 cm^2·V^(-1)·s^(-1). This work provides a way for the synthesis of large-scale,high-quality graphene on weak-coupled metal substrates.展开更多
文摘采用密度泛函理论研究了M(M=In,Ir)原子修饰的M-Au(111)合金表面的稳定性,并选其最优模型探讨了合金表面的活性及其对巴豆醛的吸附。合金的几何构型、形成能和结合能等性质表明,In-Au(111)面的稳定性随In原子的间距增大而提高,Ir-Au(111)面的稳定性随Ir原子的间距增大而降低。对于巴豆醛在MAu(111)面上的吸附,当其通过C=O吸附于合金表面的TopM位时,吸附能最大,吸附构型最稳定。从巴豆醛的结构变化、态密度、差分电荷密度以及Mulliken电荷布居等分析可以看出,稳定吸附构型的巴豆醛分子形变较大,电荷转移明显。其中,位于-7.04 e V至费米能级处的p、d轨道杂化,对体系的吸附具有重要贡献。分析比较In-Au(111)面与Ir-Au(111)面,发现后者的配体效应更佳,不仅具有更高的稳定性和活性,而且对于巴豆醛具有更强的吸附力。此外,相比于改性前的Au(111)面,M原子的修饰明显提升了金属表面的稳定性及吸附能力。
文摘基于巴豆醛在M/Au(111)合金表面(M=In,Ir)垂直吸附的最稳定吸附结构,采用密度泛函理论对其不完全加氢的反应机理进行探究。从不同加氢机理下各基元反应的活化能、反应热计算以及构型变化分析中可知,巴豆醛在M/Au(111)面上均优先对距离合金表面较近的CO进行加氢,且以C为活性中心优先进行加氢为最优机理,其中第1步加氢反应的活化能较高,是该机理的控速步骤。反应物巴豆醛的O原子与合金的掺杂原子M形成较强的化学吸附,提高了M/Au(111)面对CO加氢的选择性。巴豆醛按最优机理加氢的基元反应中在In/Au(111)面上最高反应能垒为0.969 e V,比在Ir/Au(111)面的最高反应能垒1.332 e V低,因此认为In/Au合金对其不完全加氢有更好的催化活性。
基金supported by the National Natural Science Foundation of China(No.91545124,No.21972131,No.21832004).
文摘The kinetics for hydrogen(H)adsorption on Ir(111)electrode has been studied in both HClO_(4) and H_(2)SO_(4) solutions by impedance spectroscopy.In HClO_(4),the adsorption rate for H adsorption on Ir(111)increases from 1.74×10^(-8)mol·cm^(-2)·s^(-1) to 3.47×10^(-7)mol·cm^(-2)·s^(-1) with the decrease of the applied potential from 0.2 V to 0.1 V(vs.RHE),which is ca.one to two orders of magnitude slower than that on Pt(111)under otherwise identical condition.This is explained by the stronger binding of water to Ir(111),which needs a higher barrier to reorient during the under potential deposition of H from hydronium within the hydrogen bonded water network.In H_(2)SO_(4),the adsorption potential is ca.200 mV negatively shifted,accompanied by a decrease of adsorption rate by up to one order of magnitude,which is explained by the hindrance of the strongly adsorbed sulfate/bisulfate on Ir(111).Our results demonstrate that under electrochemical environment,H adsorption is strongly affected by the accompanying displacement and reorientation of water molecules that initially stay close to the electrode surface.
基金Project supported by the National Key Research&Development Program of China(Grant Nos.2016YFA0202300 and 2018YFA0305800)the National Natural Science Foundation of China(Grant Nos.61888102 and 51872284)+2 种基金the Chinese Academy of Sciences(CAS)Pioneer Hundred Talents Program,the Strategic Priority Research Program of Chinese Academy of Sciences(Grant Nos.XDB30000000 and XDB28000000)Beijing Nova Program,China(Grant No.Z181100006218023)the University of Chinese Academy of Sciences
文摘Iridium is a promising substrate for self-limiting growth of graphene. However, single-crystalline graphene can only be fabricated over 1120 K. The weak interaction between graphene and Ir makes it challenging to grow graphene with a single orientation at a relatively low temperature. Here, we report the growth of large-scale, single-crystalline graphene on Ir(111) substrate at a temperature as low as 800 K using an oxygen-etching assisted epitaxial growth method. We firstly grow polycrystalline graphene on Ir. The subsequent exposure of oxygen leads to etching of the misaligned domains.Additional growth cycle, in which the leftover aligned domain serves as a nucleation center, results in a large-scale and single-crystalline graphene layer on Ir(111). Low-energy electron diffraction, scanning tunneling microscopy, and Raman spectroscopy experiments confirm the successful growth of large-scale and single-crystalline graphene. In addition, the fabricated single-crystalline graphene is transferred onto a SiO_2/Si substrate. Transport measurements on the transferred graphene show a carrier mobility of about 3300 cm^2·V^(-1)·s^(-1). This work provides a way for the synthesis of large-scale,high-quality graphene on weak-coupled metal substrates.
