Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell.The m...Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell.The microstructural,optical and electrical properties of the a-ITO film were characterized by XRD,SEM,XPS,UV-VIS spectrophotometer,four-point probe and Hall effect measurement,respectively.The electrical properties of heterojunction were investigated by I-V measurement,which reveals that the heterojunction shows strong rectifying behavior under a dark condition.The ideality factor and the saturation current density of this diode are 2.26 and 1.58×10-4 A cm-2,respectively.And the value of IF/IR(IF and IR stand for forward and reverse currents,respectively) at 1 V is found to be as high as 21.5.For the a-ITO/p-Si heterojunction solar cell,the a-ITO thin film acts not only as an emitter layer,but also as an anti-reflected coating film.The conversion efficiency of the fabricated a-ITO/p-Si heterojunction cell is approximately 1.1%,under 100 mW cm-2 illumination(AM1.5 condition).And the open-circuit voltage(Voc),short-circuit current density(J SC),filll factor(FF) are 280 mV,9.83 mA cm 2 and 39.9%,respectively.Because the ITO film deposited at low temperature is amorphous,it can effectively reduce the interface states between ITO and p-Si.The barrier height and internal electric field,which is near the surface of p-Si,can effectively be enhanced.Thus we can see the great photovoltaic effect.展开更多
The transient photovoltage of ITO/CuPc/AI is studied. The transient photovoltage under the Al side illumination is much greater than that under ITO side illumination. It is not negligible while light is almost complet...The transient photovoltage of ITO/CuPc/AI is studied. The transient photovoltage under the Al side illumination is much greater than that under ITO side illumination. It is not negligible while light is almost completely absorbed by the Al layer. It seems that the light absorption of the Al layer could enhance the generation of the photoinduced carriers in the organic layer, which is further shown by the transient photovoltage study of ITO/Al/NPB/Au. A possible mechanism proposed is that the holes generated in the Al are because of light absorption that is injected from the AI to organic materials. This results in further charge separation by the internal built-in electric field.展开更多
基金supported by the State Key Laboratory for Modification of Chemical Fibers and Polymer Materials,Donghua University (Grant No.13M1060102)the Fundamental Research Funds for the Central Universities,China,Donghua University (Grant No. 13D110913)+5 种基金National Natural Science Foundation of China (Grant Nos. 51072034,11174048,51172042)the Cultivation Fund of the Key Scientific and Technical Innovation Project of China (Grant No. 708039)Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 201100751300-01)Science and Technology Commission of Shanghai Municipality (Grant No. 12nm0503900)the Program for Professor of Special Appointment(Eastern Scholar)at Shanghai Institutions of Higher Learningthe Program of Introducing Talents of Discipline to Universities of China(Grant No. 111-2-04)
文摘Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell.The microstructural,optical and electrical properties of the a-ITO film were characterized by XRD,SEM,XPS,UV-VIS spectrophotometer,four-point probe and Hall effect measurement,respectively.The electrical properties of heterojunction were investigated by I-V measurement,which reveals that the heterojunction shows strong rectifying behavior under a dark condition.The ideality factor and the saturation current density of this diode are 2.26 and 1.58×10-4 A cm-2,respectively.And the value of IF/IR(IF and IR stand for forward and reverse currents,respectively) at 1 V is found to be as high as 21.5.For the a-ITO/p-Si heterojunction solar cell,the a-ITO thin film acts not only as an emitter layer,but also as an anti-reflected coating film.The conversion efficiency of the fabricated a-ITO/p-Si heterojunction cell is approximately 1.1%,under 100 mW cm-2 illumination(AM1.5 condition).And the open-circuit voltage(Voc),short-circuit current density(J SC),filll factor(FF) are 280 mV,9.83 mA cm 2 and 39.9%,respectively.Because the ITO film deposited at low temperature is amorphous,it can effectively reduce the interface states between ITO and p-Si.The barrier height and internal electric field,which is near the surface of p-Si,can effectively be enhanced.Thus we can see the great photovoltaic effect.
基金supported by the Ministry of Science and Technology of China (Grant No. 2012CB921401)the National Natural Science Foundation of China (Grant No. 11134002)
文摘The transient photovoltage of ITO/CuPc/AI is studied. The transient photovoltage under the Al side illumination is much greater than that under ITO side illumination. It is not negligible while light is almost completely absorbed by the Al layer. It seems that the light absorption of the Al layer could enhance the generation of the photoinduced carriers in the organic layer, which is further shown by the transient photovoltage study of ITO/Al/NPB/Au. A possible mechanism proposed is that the holes generated in the Al are because of light absorption that is injected from the AI to organic materials. This results in further charge separation by the internal built-in electric field.
