Quantum fluctuations of mesoscopic damped double resonance RLC circuit with mutual capacitance-inductance coupling

Based on the scheme of damped harmonic oscillator quantization and thermo-field dynamics （TFD）, the quantization of mesoscopic damped double resonance RLC circuit with mutual capacitance-inductance coupling is proposed. The quantum fluctuations of charge and current of each loop in a squeezed vacuum state are studied in the thermal excitation case. It is shown that the fluctuations not only depend on circuit inherent parameters, but also rely on excitation quantum number and squeezing parameter. Moreover, due to the finite environmental temperature and damped resistance, the fluctuations increase with the temperature rising, and decay with time.

A FAULT DETECTION SENSOR FOR CIRCUIT AGING USING DOUBLE-EDGE-TRIGGERED FLIP-FLOP

In nanoscale technology, transistor aging is one of the most critical problems that impact on the reliability of circuits. Aging sensor is a good online way to detect the circuit aging, which performs during the operating time with no influence of the normal operation of circuits. In this paper, a Double-edge-triggered Detection Sensor for circuit Aging (DSDA) is proposed, which employs data signal of logic circuits as its clock to control the sampling process. The simulation is done by Hspice using 45 nm technology. The results show that this technique is not sensitive to the process variations. The worst case of the detection precision is more than 80% under the different process variations. It can detect aging fault effectively with the 8% power cost and 30% performance cost.

Process Analysis of Double Circuit Transmission Line Trip-out on the Same Tower Due to Lightning

In recent years,several failures of double circuit transmission line on the same tower due to lightning were happened in Beijing power grid.Although it can be reclosed successful,the lightning strike caused a grave threat to the power grid security.The cause of the accident and the accident process were studied for the sake of further understanding of the impact of lightning on power grid.As an example,110 kV double circuit transmission line(Xilong-line) was analyzed.At first,the system topology was given.Through the analysis on relay protection actions and the fault recorder data,over voltage on the insulator strings was calculated.Based on the analysis and the calculation,accident cause and the process were presented respectively.Secondly,it comes to the conclusion that the lightning failure was caused by counterattack.The wave of the lightning over voltage would spread to the not grounded neutral point of the transformers,and make the neutral protective gap breakdown,then cause freewheeling with the frequency of 50 Hz.As results of the relay protection,the double circuit transmission line all tripped out.Finally,the causes of the accident were proposed that included terrain features,large corner towers,strong thunderstorm weather and poor grounded contact of the tower.

Protection of ±500 kV HVDC Double-circuit Converter Station from Lightning Induced Overvoltage

In order to obtain reasonable schemes of arrester in converter stations, the arrester scheme of "Xiluodu-Guangdong HVDC ± 500 kV double circuit transmission" project against lighting induced overvoltage, which was designed according to the main principle of lightning protection in converter station, is discussed. A calculation of the lighting induced overvoltage in Zhaotong converter station un- der various operation modes is performed with ATP-EMTP software, then the surge arrester configuration of the converter station is decided, and the arrester protection schemes of smoothing reactor and neutral line are studied. It is concluded that additional protection is necessary because of the relatively large gap between protected disconnecting switch and arrester of metallic return transfer bus. Plus, the smoothing reactor (SR) arrester near the valve hall could be removed to improve the scheme’s economic performance.

A Novel Fault Location Algorithmfor Double-Circuit Transmission Lines based on Distributed Parameter

Anewfault location algorithmfor double-circuit transmissionlines is described inthis paper.Theproposed method uses data extractedfromtwo ends of the transmissionlines andthus eliminates the effects ofthe source impedance andthe fault resistance.The distributed parameter model and the modal transformationare also employed.Depending on modal transformation,the coupled equations of the lines are converted intodecoupled ones.Inthis way,the mutual coupling effects between adjacent circuits of the lines are eliminatedandtherefore an accurate fault location can be achieved.The proposed methodis tested via digital simulationusing EMTP in conjunction with MATLAB.The test results corroborate the high accuracy of the proposedmethod.

Fault Locator Using Two-end Unsynchronized Measurements for UHV Series Compensated Double-circuit Lines

An accurate fault location algorithm for double-circuit series compensated lines is presented.Use of two-end unsynchronized measurements of current and voltage signals is considered.The algorithm applies two subroutines,designated for locating faults on particular line sections,and additionally the procedure for selecting the valid subroutine.The subroutines are formulated with use of the generalized fault loop model and the distributed parameter line model is applied.Performed ATP-EMTP based evaluation has shown the validity of the derived fault location algorithm and its high accuracy.

A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

Design and characterization of a G-band（140–220 GHz） terahertz monolithic integrated circuit（TMIC） amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heterojunction bipolar transistor（DHBT）. An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the In P substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are-2.688 dBm at 210 GHz and-2.88 dBm at 220 GHz,respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.

Design and Simulation of Solid State Pulser with Fast Rise Time and Double-exponential Waveform

Voltage pulses with fast rise time can be obtained from Marx circuits based on avalanche transistors. In this research, the ZETEX avalanche transistors are used as the switches in a Marx circuit to generate stable voltage pulses with double-exponential waveform and fast rise time. By using these transistors, the circuit is able to generate higher pulsed voltage with fewer stages. A three stages and a ten stages Marx circuit, as well as their triggering circuits, are designed. The two Marx circuits are also tested by simulations based on the Pspice code and by experiments, results of which are consistent with each other. With the ten stages Marx circuit, we obtain positive and negative pulses with the rise time of about 1.5 ns, the amplitude above 1 100 V, and the pulse width below 5 ns. It is proved that the proposed Marx circuit equipped with avalanche transistors could be an effective kind of solid-state pulse generator.

特勒根似功率保护在同塔双回交流输电线路中的应用

随着我国电网规模快速扩张,输电通道资源日渐紧缺,同塔多回输电技术逐渐得到广泛应用。超/特高压远距离输电线路一般以差动保护作为双重主保护,与纵联距离/方向保护构成双重化配置。但用于同塔双回输电线路时,分布电容电流将影响差动保护的灵敏度;同时,由于双回线线间和相间较强的电磁耦合作用,线间互感的影响将会降低纵联距离、纵联方向保护判断的正确性,导致原来的保护配置方案难以直接应用。将特勒根似功率保护原理推广至同塔双回线路,提出了一种基于特勒根似功率定理的同塔双回输电线路纵联保护方法,能够不受双回线内部复杂电磁耦合、分布电容、系统负荷等影响,并验证了该保护的对时方案在双回线路中的适用性。采用MATLAB/Simulink仿真软件搭建1000kV特高压同塔双回输电线示范工程模型,经大量仿真实验,验证了所提保护方法的有效性。

一类三电平伪图腾柱无桥PFC变换器

针对传统二极管钳位型三电平整流器在单相电源前级功率校正(power factor correction,PFC)电路应用场景下全控开关器件数量多的问题,该文基于3种传统无桥PFC电路进行三电平电路拓扑设计,提出一类三电平伪图腾柱PFC电路(single-phase three-level pseudo totem-pole PFC circuit,STPT-PFC),该类三电平PFC具有双电感支路桥臂,两者相互配合工作为输入电流提供路径,在正负半周两电感支路桥臂工作于不同模态可有效降低分别流过两电感的电流;基于该类PFC的一个代表性电路,从工作电流路径过程、关键波形和调制脉冲分配等方面对其进行工作原理分析,并对其它电路进行电路特性总结,推导桥臂对地电压电平特性与开关脉冲分配的数学关系式。另外,该类STPT-PFC共有5种结构,结合该类STPT-PFC结构特点,提出统一区间判断条件的双层载波调制技术,该类STPT-PFC具有相同开关器件不同拓扑结构可采用同一调制方案的特点,便于该类调制技术移植。最后,基于STPT-PFC-I电路设计1台额定功率1 kW、直流输出电压400 V的实验样机,从稳态及动态两方面进行实验分析,实验结果验证所提出一类三电平伪图腾柱PFC电路的可行性和三电平统一双层调制方法的有效性。

铯原子钟电子倍增器可调高压电源设计

电子倍增器用来放大并输出铯原子的跃迁信号。倍增器电源是其重要组成部分,针对电子倍增器在增益变化及衰减情况下的供电需求,提出了一种基于分流调整电路结合倍压整流电路的高压电源设计方案,该方案在低压部分采用分流调整技术实现了电源输出电压控制;采用变压器结合多级倍压整流电路对电压放大输出,实现了电源可调电压范围在-306~-3 150 V和低输出纹波,电源的遥测电路实现了输出电压遥测。星载铯原子钟经过长期在轨测试,测试结果表明,本设计的电源在控制范围内实现了宽范围电压输出和遥测,低于3.23 V的电源纹波,保证了铯原子钟稳定度指标。

高光谱应用的带可调复位时间CDS的低噪声红外焦平面读出电路

低辐射量的高光谱应用对红外焦平面读出电路(ROIC)提出了低噪声的设计要求。相关双采样(CDS)是常用的减少噪声的结构。本文通过调节钳位和采样保持之间的时间间隔来改进CDS,可灵活消除低频噪声。采用180 nm CMOS工艺设计和制造了640×512规模、15μm像元中心距的读出电路。输入级集成了低噪声CTIA与本文提出的可调复位时间CDS(AICDS),所设计的时序产生器使CDS复位时间可以延长0~270个时钟周期。通过延长复位时间减少这个时间间隔,噪声电子数可以由39 e^(-)减少到18.3 e^(-)。SPECTRE仿真结果和实验测试结果证实了提出的AICDS结构可以提升高光谱应用读出电路的噪声性能,因此可以广泛应用。

转子温度空间分布差异诱发永磁电机局部失磁特性研究

永磁材料磁特性受工作温度影响较大,高工作温度下存在的不可逆失磁现象是永磁电机高可靠性设计的主要瓶颈。针对内置式磁路结构的高功率密度永磁电机用钕铁硼永磁材料的不可逆失磁问题,基于电机全域空间损耗、温度分布的差异,该文提出一种永磁体局部失磁分析模型与特性计算方法。通过磁体虚拟分块法建立基于温度、退磁率等变量的永磁材料磁特性分析模型,利用电磁场和温度场双向耦合的三维多物理场计算方法,得到电机转子永磁体损耗、温度和局部失磁的空间分布特性。最后,通过对一台115 kW、8极永磁电机样机转子永磁体温度和转子表面磁场的实验测试,验证了分析模型与计算方法的准确性,为永磁电机局部失磁问题研究及精细化防失磁设计提供依据。

基于d-q理论的双馈异步电机定子匝间短路故障诊断方法

为实现双馈异步电机定子绕组匝间短路的早期故障诊断,提出一种基于转子电流特征频率分量的故障诊断方法 .首先,通过分析故障后电机的电磁特性,得到故障后转子电流中会产生特征频率分量的结论 .然后,通过对转子单相电流进行特殊的相移构造出三相电流,并对该组电流进行d-q变换,利用理论推导证明d-q变换后的直流分量幅值能够反映特征谐波的大小,将直流分量作为故障特征量进行双馈异步电机匝间短路故障的诊断.最后,依据有限元法建立故障前后电机的仿真模型,对不同工况下故障特征量的变化进行研究.结果表明:基于d-q理论提取的故障特征量与定子绕组的短路匝数呈正相关,且在转速变化和电压不平衡时也可有效诊断出匝间短路故障;通过设置合理的故障阈值可实现对双馈异步电机定子绕组匝间短路故障的精确辨识.研究结果可以为电机绕组匝间短路故障诊断提供参考.

基于双电容器耦合和线性补偿的高稳定度平顶脉冲强磁场调控系统分析与设计

平顶脉冲磁场具备脉冲磁场强度高和稳态磁场稳定度高的双重优势,是现代物理科学研究的重要工具。为满足脉冲场核磁共振、I-V测量等科学实验对平顶脉冲磁场高稳定度的需求,该文提出基于双电容器回路耦合放电和线性补偿的平顶磁场调控方案。为此,理论分析双电容器回路耦合放电过程,建立配置主/辅回路电容电压和放电时序的优化方法,基于IGBT有源区的流控特性,设计线性调节补偿回路和前馈反馈相结合的控制器,研制与主磁体解耦的1 T补偿磁体,对双电容器回路耦合放电产生的背景磁场进行高精度调控,最终实现了强度为45.2 T、持续时间为8 ms以及稳定度为0.02%的平顶脉冲磁场,满足相关固态核磁共振等科学实验需求。

基于力柔顺控制的断路器轴孔零件装配算法

针对双臂机器人断路器轴孔零件装配操作任务,研究了一种两阶段轴孔装配轨迹规划策略,为了提高双臂协调装配作业的柔顺性和精确性,提出一种FAIC控制算法,实现精确的力跟踪。首先建立轴和孔接触状态力学模型,开展轴孔装配机理研究,根据双臂末端受力平衡,提出了一种操作空间轴孔装配的双臂运动轨迹规划方法。基于阻抗控制实现柔顺轴孔装配,采用模糊控制器在线辨识阻抗控制最优参数,提高装配操作质量。实验结果表明,在双臂协作轴孔装配策略结合FAIC算法作用下,轴孔间接触力控制在3 N以内,装配效率提高36.5%。综上所述,本文提出的FAIC算法与装配策略在双臂协同断路器装配作业中有效地缩短磁组件的装配时间,提高装配效率与精度。

基于微带双脊间隙波导技术的Ka波段六端口网络电路

面向毫米波高精度雷达探测应用,文中提出了一种基于微带双脊间隙波导技术的六端口网络电路。设计了基于微带双脊间隙波导的功分器和耦合器电路,提出了微带双脊间隙波导至微带线的新型过渡转换结构,并基于简化的六端口网络原理框图,将所设计的功分器、耦合器以及过渡转换结构进行有机组合,实现了所设计的Ka波段六端口网络电路。实验测试结果表明:在所设计的37.5 GHz~42.5 GHz频率范围内,输入端口1与四个输出端口间的相位差均在±2.5°以内,输入端口2与四个输出端口间的相位差均在±5°内,工作中心频率处的输入输出间插入损耗约为7.3 dB。实验与仿真结果吻合较好。

非线性接口电路对双稳态压电能量收集器性能提升的仿真研究

采用谐波平衡法仿真分析非线性双稳态压电振动能量收集装置(Bistable Energy Harvester,BEH)与双同步开关收集(Double Synchronized Switch Harvesting,DSSH)电路之间的非线性机电耦合情况。研究结果表明,在上扫频激励的条件下,BEH耦合DSSH电路相较于耦合标准接口电路(Standard Energy Harvesting,SEH)的最优输出功率和工作带宽分别提高了391.1%和14.9%;在6 m/s^(2)的定频激励下,BEH耦合DSSH电路比耦合SEH电路的最优输出功率提高了344.8%,且与负载无关。

基于对称型双谐振电路的LTCC温湿传感器

为了实现高温、恶劣环境下温度和湿度复合参数测量,设计了一种基于对称型双谐振电路的双参数传感器。该传感器采用了一种独特的对称型双谐振电路,可解决多参数间物理性串扰的难题。首先通过高频结构模拟器(HFSS)对传感器电场进行仿真,采用低温共烧陶瓷(LTCC)技术对传感器进行制备,最后搭建温度和湿度平台测试并验证了传感器的可行性。测试结果表明,两个被测参数的谐振频率彼此完全独立、解耦,其中传感器的最高测试温度为500℃,随着温度的升高,温度灵敏度逐渐升高,在25~300℃、300~400℃和400~500℃范围内,温度灵敏度分别约为0.0116、0.0259和0.0493 MHz/℃,湿度灵敏度约为0.043 MHz/%RH,传感器对温度和湿度测量均表现出了良好的敏感特性。