In this work, an in-situ ozone treatment is carried out to improve the interface thermal stability of HfO_2/Al_2O_3 gate stack on germanium（Ge） substrate. The micrometer scale level of HfO_2/Al_2O_3 gate stack on Ge...In this work, an in-situ ozone treatment is carried out to improve the interface thermal stability of HfO_2/Al_2O_3 gate stack on germanium（Ge） substrate. The micrometer scale level of HfO_2/Al_2O_3 gate stack on Ge is studied using conductive atomic force microscopy（AFM） with a conductive tip. The initial results indicate that comparing with a non insitu ozone treated sample, the interface thermal stability of the sample with an in-situ ozone treatment can be substantially improved after annealing. As a result, void-free surface, low conductive spots, low leakage current density, and relative high breakdown voltage high-κ/Ge are obtained. A detailed analysis is performed to confirm the origins of the changes.All results indicate that in-situ ozone treatment is a promising method to improve the interface properties of Ge-based three-dimensional（3D） devices in future technology nodes.展开更多
Al2O3and HfO2thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition(ALD).The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy(AR-XP...Al2O3and HfO2thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition(ALD).The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy(AR-XPS).It is demonstrated that the Al2O3layer can reduce interfacial oxidation and trap charge formation.The gate leakage current densities are 1.37×106A/cm2and 3.22×106A/cm2at+1V for the Al2O3/InAlAs and HfO2/InAlAs MOS capacitors respectively.Compared with the HfO2/InAlAs metal-oxide-semiconductor(MOS) capacitor,the Al2O3/InAlAS MOS capacitor exhibits good electrical properties in reducing gate leakage current,narrowing down the hysteresis loop,shrinking stretch-out of the C-V characteristics,and significantly reducing the oxide trapped charge(Qot) value and the interface state density(Dit).展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61604016)China Postdoctoral Science Foundation(Grant No.2017M613028)the Fundamental Research Funds for the Central Universities,China(Grant Nos.310831161003 and CHD2017ZD142)
文摘In this work, an in-situ ozone treatment is carried out to improve the interface thermal stability of HfO_2/Al_2O_3 gate stack on germanium（Ge） substrate. The micrometer scale level of HfO_2/Al_2O_3 gate stack on Ge is studied using conductive atomic force microscopy（AFM） with a conductive tip. The initial results indicate that comparing with a non insitu ozone treated sample, the interface thermal stability of the sample with an in-situ ozone treatment can be substantially improved after annealing. As a result, void-free surface, low conductive spots, low leakage current density, and relative high breakdown voltage high-κ/Ge are obtained. A detailed analysis is performed to confirm the origins of the changes.All results indicate that in-situ ozone treatment is a promising method to improve the interface properties of Ge-based three-dimensional（3D） devices in future technology nodes.
基金supported by the National Basic Research Program of China(Grant No.2010CB327505)the Advanced Research Foundation of China(Grant No.914xxx803-051xxx111)+3 种基金the National Defense Advance Research Project,China(Grant No.513xxxxx306)the National Natural Science Foundation of China(Grant No.51302215)the Scientific Research Program Funded by Shaanxi Provincial Education Department,China(Grant No.14JK1656)the Science and Technology Project of Shaanxi Province,China(Grant No.2016KRM029)
文摘Al2O3and HfO2thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition(ALD).The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy(AR-XPS).It is demonstrated that the Al2O3layer can reduce interfacial oxidation and trap charge formation.The gate leakage current densities are 1.37×106A/cm2and 3.22×106A/cm2at+1V for the Al2O3/InAlAs and HfO2/InAlAs MOS capacitors respectively.Compared with the HfO2/InAlAs metal-oxide-semiconductor(MOS) capacitor,the Al2O3/InAlAS MOS capacitor exhibits good electrical properties in reducing gate leakage current,narrowing down the hysteresis loop,shrinking stretch-out of the C-V characteristics,and significantly reducing the oxide trapped charge(Qot) value and the interface state density(Dit).
