In this paper,we report the deductive formula used for the method of dual-wavelength corresponding solutions under condition of having ligand interference and the stability constants of three new coordination compound...In this paper,we report the deductive formula used for the method of dual-wavelength corresponding solutions under condition of having ligand interference and the stability constants of three new coordination compounds [AuL_2]^+determined with this method.The stability of the three compounds,the necessity of controlling pH in experimental systems and the advantage of this method are discussed in detail.展开更多
This paper presents an in-situ, non-contact, non-destructive "dual-wavelength laser flash Raman spectroscopy method" for measuring the thermal diffusivity. In this method, a heating pulse is used to heat the...This paper presents an in-situ, non-contact, non-destructive "dual-wavelength laser flash Raman spectroscopy method" for measuring the thermal diffusivity. In this method, a heating pulse is used to heat the sample and another pulsed laser with a different wavelength and negligible heating effect is used as a probe to measure the sample temperature changes during the heating and cooling periods from the Raman peak shifts. The sample temperature rise and fall curves are measured by changing the delay between the heating pulse and the probing pulse with the thermal diffusivity then characterized by fitting the temperature curves. The time delay between the heating and probing pulses can be precisely controlled with a minimum step of 100 ps. Hence, the temperature variation can be scanned with an ultra-high temporal resolution of up to 100 ps, which significantly improves the measurement accuracy of transient thermal parameters. The measurement accuracy of this method has been verified using a bulk material model and experiments. The measured thermal diffusivity of a silicon sample has been obtained to be 8.8×10^(-5 )m^2/s with a 3% difference between the measured value and the average result for bulk silicon in the literature which verifies the reliability and accuracy of this method.展开更多
Understanding the substrate and temperature effect on thermal transport properties of transition metal dichalcogenides(TMDs)monolayers are crucial for their future applications.Herein,a dual-wavelength flash Raman(DF-...Understanding the substrate and temperature effect on thermal transport properties of transition metal dichalcogenides(TMDs)monolayers are crucial for their future applications.Herein,a dual-wavelength flash Raman(DF-Raman)method is used to measure the thermal conductivity of monolayer WS_(2) at a temperature range of 200–400 K.High measurement accuracy can be guaranteed in this method since the influence of both the laser absorption coefficient and temperature-Raman coefficient can be eliminated through normalization.The room-temperature thermal conductivity of suspended and supported WS_(2) are 28.5±2.1(30.3±2.0)and 15.4±1.9(16.9±2.1)W/(m·K),respectively,with a~50%reduction due to substrate effect.Molecular dynamics(MD)simulations reveal that the suppression of acoustic phonons is mainly responsible for the striking reduction.The behaviors of optical phonons are also unambiguously investigated using Raman spectroscopy,and the in-plane optical mode,E(Γ),is surprisingly found to be slightly enhanced while out-of-plane mode,A1g(Γ),is suppressed due to substrate interaction,mutually verified with MD results.Our study provides a solid understanding of the phonon transport behavior of WS_(2) with substrate interaction,which provides guidance for TMDs-based nanodevices.展开更多
文摘In this paper,we report the deductive formula used for the method of dual-wavelength corresponding solutions under condition of having ligand interference and the stability constants of three new coordination compounds [AuL_2]^+determined with this method.The stability of the three compounds,the necessity of controlling pH in experimental systems and the advantage of this method are discussed in detail.
基金supported by the National Natural Science Foundation of China (Grant Nos. 51827807 and 51636002)
文摘This paper presents an in-situ, non-contact, non-destructive "dual-wavelength laser flash Raman spectroscopy method" for measuring the thermal diffusivity. In this method, a heating pulse is used to heat the sample and another pulsed laser with a different wavelength and negligible heating effect is used as a probe to measure the sample temperature changes during the heating and cooling periods from the Raman peak shifts. The sample temperature rise and fall curves are measured by changing the delay between the heating pulse and the probing pulse with the thermal diffusivity then characterized by fitting the temperature curves. The time delay between the heating and probing pulses can be precisely controlled with a minimum step of 100 ps. Hence, the temperature variation can be scanned with an ultra-high temporal resolution of up to 100 ps, which significantly improves the measurement accuracy of transient thermal parameters. The measurement accuracy of this method has been verified using a bulk material model and experiments. The measured thermal diffusivity of a silicon sample has been obtained to be 8.8×10^(-5 )m^2/s with a 3% difference between the measured value and the average result for bulk silicon in the literature which verifies the reliability and accuracy of this method.
基金supported by the National Natural Science Foundation of China(Nos.51827807,51972191,and 52130602).
文摘Understanding the substrate and temperature effect on thermal transport properties of transition metal dichalcogenides(TMDs)monolayers are crucial for their future applications.Herein,a dual-wavelength flash Raman(DF-Raman)method is used to measure the thermal conductivity of monolayer WS_(2) at a temperature range of 200–400 K.High measurement accuracy can be guaranteed in this method since the influence of both the laser absorption coefficient and temperature-Raman coefficient can be eliminated through normalization.The room-temperature thermal conductivity of suspended and supported WS_(2) are 28.5±2.1(30.3±2.0)and 15.4±1.9(16.9±2.1)W/(m·K),respectively,with a~50%reduction due to substrate effect.Molecular dynamics(MD)simulations reveal that the suppression of acoustic phonons is mainly responsible for the striking reduction.The behaviors of optical phonons are also unambiguously investigated using Raman spectroscopy,and the in-plane optical mode,E(Γ),is surprisingly found to be slightly enhanced while out-of-plane mode,A1g(Γ),is suppressed due to substrate interaction,mutually verified with MD results.Our study provides a solid understanding of the phonon transport behavior of WS_(2) with substrate interaction,which provides guidance for TMDs-based nanodevices.
