Inter-growth bismuth layer-structured ferroelectrics（BLSFs）, Bi_4Ti_3O_（12）-Na_（0.5）Bi_（4.5）Ti_4O_（15）（BIT-NBT）, were successfully synthesized using the traditional solid-state reaction method. X-ray diffr...Inter-growth bismuth layer-structured ferroelectrics（BLSFs）, Bi_4Ti_3O_（12）-Na_（0.5）Bi_（4.5）Ti_4O_（15）（BIT-NBT）, were successfully synthesized using the traditional solid-state reaction method. X-ray diffraction（XRD） Rietveld refinements were conducted using GSAS software. Good agreement and low residual are obtained. The XRD diffraction peaks can be well indexed into I2 cm space group. The inter-growth structure was further observed in the high-resolution TEM image. Dielectric and impedance properties were measured and systematically analyzed. At the temperature range 763-923 K（below T_c）, doubly ionized oxygen vacancies（OVs） are localized and the short-range hopping leads to the relaxation processes with an activation energy of 0.79-1.01 eV. Above T_c, the doubly charged OVs are delocalized and become free ones, which contribute to the long-range dc conduction. The reduction in relaxation species gives rise to a higher relaxation activation energy ~ 1.6 eV.展开更多
采用固相烧结法制备铋层结构Na 0.5 Bi 4.5 Ta x Ti 4-x O 15+0.5 x(NBT-Ta-x)(x=0~0.20)压电陶瓷。采用X射线衍射、扫描电镜和自动控温测试系统研究Ta 5+的B位掺杂对NBT-Ta-x陶瓷的微观结构、电导、介电和压电性能的影响。结果表明:随T...采用固相烧结法制备铋层结构Na 0.5 Bi 4.5 Ta x Ti 4-x O 15+0.5 x(NBT-Ta-x)(x=0~0.20)压电陶瓷。采用X射线衍射、扫描电镜和自动控温测试系统研究Ta 5+的B位掺杂对NBT-Ta-x陶瓷的微观结构、电导、介电和压电性能的影响。结果表明:随Ta掺杂量的增加,晶粒尺寸和长径比逐渐减小,表现出沿c轴的取向生长,同时,陶瓷的理论密度和体积密度增加,在掺杂量x=0.05时达到最高的相对密度96.1%,Ta在NBT晶格中的固溶极限在0.10附近。随Ta 5+掺杂量x增加到0.20,陶瓷的居里温度从680℃降至658℃。Ta 5+掺杂使NBT-Ta-x陶瓷的电阻率增加了两个数量级,压电常数d 33从13.8 pC/N增加到23 pC/N。当x=0.04~0.05时,NBT-Ta-x陶瓷的综合电性能良好:T c=670~672℃,d 33=21.8~23 pC/N,k p=7.9%~8.3%。展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51562014,51262009,and 51602135)
文摘Inter-growth bismuth layer-structured ferroelectrics（BLSFs）, Bi_4Ti_3O_（12）-Na_（0.5）Bi_（4.5）Ti_4O_（15）（BIT-NBT）, were successfully synthesized using the traditional solid-state reaction method. X-ray diffraction（XRD） Rietveld refinements were conducted using GSAS software. Good agreement and low residual are obtained. The XRD diffraction peaks can be well indexed into I2 cm space group. The inter-growth structure was further observed in the high-resolution TEM image. Dielectric and impedance properties were measured and systematically analyzed. At the temperature range 763-923 K（below T_c）, doubly ionized oxygen vacancies（OVs） are localized and the short-range hopping leads to the relaxation processes with an activation energy of 0.79-1.01 eV. Above T_c, the doubly charged OVs are delocalized and become free ones, which contribute to the long-range dc conduction. The reduction in relaxation species gives rise to a higher relaxation activation energy ~ 1.6 eV.
文摘采用固相烧结法制备铋层结构Na 0.5 Bi 4.5 Ta x Ti 4-x O 15+0.5 x(NBT-Ta-x)(x=0~0.20)压电陶瓷。采用X射线衍射、扫描电镜和自动控温测试系统研究Ta 5+的B位掺杂对NBT-Ta-x陶瓷的微观结构、电导、介电和压电性能的影响。结果表明:随Ta掺杂量的增加,晶粒尺寸和长径比逐渐减小,表现出沿c轴的取向生长,同时,陶瓷的理论密度和体积密度增加,在掺杂量x=0.05时达到最高的相对密度96.1%,Ta在NBT晶格中的固溶极限在0.10附近。随Ta 5+掺杂量x增加到0.20,陶瓷的居里温度从680℃降至658℃。Ta 5+掺杂使NBT-Ta-x陶瓷的电阻率增加了两个数量级,压电常数d 33从13.8 pC/N增加到23 pC/N。当x=0.04~0.05时,NBT-Ta-x陶瓷的综合电性能良好:T c=670~672℃,d 33=21.8~23 pC/N,k p=7.9%~8.3%。
