We develop a picosecond widely tunable laser in a deep-ultraviolet region from 175 nm to 210 nm, generated by two stages of frequency doubling of a 80-MHz mode-locked picosecond Ti：sapphire laser. A β-BaB2O4 walk-of...We develop a picosecond widely tunable laser in a deep-ultraviolet region from 175 nm to 210 nm, generated by two stages of frequency doubling of a 80-MHz mode-locked picosecond Ti：sapphire laser. A β-BaB2O4 walk-off compensation configuration and a KBe2BO3F2 prism-coupled device are adopted for the generation of second harmonic and fourth harmonics, respectively. The highest power is 3.72 mW at 193 nm, and the fluctuation at 2.85 mW in 130 rain is less than ±2%.展开更多
基金supported by the State Key Program for Basic Research of China (Grant No. 2010CB630706)National High Technology Research and Development Program of Chinathe National Natural Science Foundation of China (Grant No. 61138004)
文摘We develop a picosecond widely tunable laser in a deep-ultraviolet region from 175 nm to 210 nm, generated by two stages of frequency doubling of a 80-MHz mode-locked picosecond Ti：sapphire laser. A β-BaB2O4 walk-off compensation configuration and a KBe2BO3F2 prism-coupled device are adopted for the generation of second harmonic and fourth harmonics, respectively. The highest power is 3.72 mW at 193 nm, and the fluctuation at 2.85 mW in 130 rain is less than ±2%.
