Strong DC coupling with weak AC and large-scale renewable energy integration are the two significant characteristics of ultra-high-voltage AC/DC(UHVAC/DC)hybrid power grids in China.Strong coupling between AC and DC g...Strong DC coupling with weak AC and large-scale renewable energy integration are the two significant characteristics of ultra-high-voltage AC/DC(UHVAC/DC)hybrid power grids in China.Strong coupling between AC and DC grids and the different integration performance of renewable energy sources have profoundly changed the stability characteristics of the power system.The traditional stability control system is inadequate for the stability control of UHVAC/DC power grids.This paper analyzes the requirements for constructing an integrated defense system in a UHVAC/DC hybrid power grid(i.e.power system protection).The definition,connotation,and designing principles of power system protection are put forward.The relationship between the power system protection and the traditional three-defense lines is investigated.The design principles,general hardware structure and main functions of a power system protection are presented.Key problems and technologies are specified in the construction of the power system protection.展开更多
A gold electrode modified with adsorbed thionine monolayer was investigated with ac impedance and cyclic voltammetry method. It was found there were some different redox properties for the adsorbed thionine depended o...A gold electrode modified with adsorbed thionine monolayer was investigated with ac impedance and cyclic voltammetry method. It was found there were some different redox properties for the adsorbed thionine depended on the different potential scanning rate. At the slower potential scanning rate (10 mV? s?1), the dimer of thionine appeared and possessed the catalytic activity for the oxidation of ascorbic acid. The underpotential deposition (UPD) and the bulk deposition of Cu2+ were also employed to investigate the monolayer of adsorbed thionine.展开更多
With the continuous scaling in conventional CMOS technologies,the planar MOSFET device is limited by the severe short-channel-effect(SCE),Multi-gate FETs(MuG-FET)such as FinFETs and Nanowire,Nanosheet devices have eme...With the continuous scaling in conventional CMOS technologies,the planar MOSFET device is limited by the severe short-channel-effect(SCE),Multi-gate FETs(MuG-FET)such as FinFETs and Nanowire,Nanosheet devices have emerged as the most promising candidates to extend the CMOS scaling beyond sub-22 nm node.The multi-gate structure has better short channel behaviors due to enhanced control from the multiple gates.Due to the relatively more mature process and rich learning of the device physics,the FinFET is still extended to 5 nm technology node.In this paper,we proposed a 5 nm FINFET device,which is based on typical 5 nm logic design rules.To achieve the challenging device performance target,which is around 15%speed gain or 25%power reduction against the 7 nm device,we have performed an optimization on the process parameters and iterate through device simulation with the consideration of current process capability.Based on our preferred device architecture,we provide our brief process flow,key dimensions,and simulated device DC/AC performance,like Vt,Idsat,SS,DIBL and parasitic parameters.As a part of the final evaluation,RO simulation result has been checked,which demonstrates that the Performance Per Area(PPA)is close to industry reference 5 nm performance.展开更多
文摘Strong DC coupling with weak AC and large-scale renewable energy integration are the two significant characteristics of ultra-high-voltage AC/DC(UHVAC/DC)hybrid power grids in China.Strong coupling between AC and DC grids and the different integration performance of renewable energy sources have profoundly changed the stability characteristics of the power system.The traditional stability control system is inadequate for the stability control of UHVAC/DC power grids.This paper analyzes the requirements for constructing an integrated defense system in a UHVAC/DC hybrid power grid(i.e.power system protection).The definition,connotation,and designing principles of power system protection are put forward.The relationship between the power system protection and the traditional three-defense lines is investigated.The design principles,general hardware structure and main functions of a power system protection are presented.Key problems and technologies are specified in the construction of the power system protection.
文摘A gold electrode modified with adsorbed thionine monolayer was investigated with ac impedance and cyclic voltammetry method. It was found there were some different redox properties for the adsorbed thionine depended on the different potential scanning rate. At the slower potential scanning rate (10 mV? s?1), the dimer of thionine appeared and possessed the catalytic activity for the oxidation of ascorbic acid. The underpotential deposition (UPD) and the bulk deposition of Cu2+ were also employed to investigate the monolayer of adsorbed thionine.
基金The authors would like to thank the management team and all our team members in Shanghai ICRD center.
文摘With the continuous scaling in conventional CMOS technologies,the planar MOSFET device is limited by the severe short-channel-effect(SCE),Multi-gate FETs(MuG-FET)such as FinFETs and Nanowire,Nanosheet devices have emerged as the most promising candidates to extend the CMOS scaling beyond sub-22 nm node.The multi-gate structure has better short channel behaviors due to enhanced control from the multiple gates.Due to the relatively more mature process and rich learning of the device physics,the FinFET is still extended to 5 nm technology node.In this paper,we proposed a 5 nm FINFET device,which is based on typical 5 nm logic design rules.To achieve the challenging device performance target,which is around 15%speed gain or 25%power reduction against the 7 nm device,we have performed an optimization on the process parameters and iterate through device simulation with the consideration of current process capability.Based on our preferred device architecture,we provide our brief process flow,key dimensions,and simulated device DC/AC performance,like Vt,Idsat,SS,DIBL and parasitic parameters.As a part of the final evaluation,RO simulation result has been checked,which demonstrates that the Performance Per Area(PPA)is close to industry reference 5 nm performance.
