Correlation of work function and stacking fault energy through Kelvin probe force microscopy and nanohardness in diluteα-magnesium

Electronic interactions of the Group 2A elements with magnesium have been studied through the dilute solid solutions in binary Mg-Ca,Mg-Sr and Mg-Ba systems.This investigation incorporated the difference in the‘Work Function'(ΔWF)measured via Kelvin Probe Force Microscopy(KPFM),as a property directly affected by interatomic bond types,i.e.the electronic structure,nanoindentation measurements,and Stacking Fault Energy values reported in the literature.It was shown that the nano-hardness of the solid-solutionα-Mg phase changed in the order of Mg-Ca>Mg-Sr>Mg-Ba.Thus,it was shown,by also considering the nano-hardness levels,that SFE of a solid-solution is closely correlated with its‘Work Function'level.Nano-hardness measurements on the eutectics andΔWF difference between eutectic phases enabled an assessment of the relative bond strength and the pertinent electronic structures of the eutectics in the three alloys.Correlation withΔWF and at least qualitative verification of those computed SFE values with some experimental measurement techniques were considered important as those computational methods are based on zero Kelvin degree,relatively simple atomic models and a number of assumptions.As asserted by this investigation,if the results of measurement techniques can be qualitatively correlated with those of the computational methods,it can be possible to evaluate the electronic structures in alloys,starting from binary systems,going to ternary and then multi-elemental systems.Our investigation has shown that such a qualitative correlation is possible.After all,the SFE values are not treated as absolute values but rather become essential in comparative investigations when assessing the influences of alloying elements at a fundamental level,that is,free electron density distributions.Our study indicated that the principles of‘electronic metallurgy'in developing multi-elemental alloy systems can be followed via practical experimental methods,i.e.ΔWF measurements using KPFM and nanoindentation.

Electron trapping properties at HfO_2/SiO_2 interface, studied by Kelvin probe force microscopy and theoretical analysis

Electron trapping properties at the HfO2/SiO2 interface have been measured through Kelvin Probe force microscopy,between room temperature and 90 ℃.The electron diffusion in HfO2 shows a multiple-step process.After injection,electrons diffuse quickly toward the HfO2/SiO2 interface and then diffuse laterally near the interface in two sub-steps：The first is a fast diffusion through shallow trap centers and the second is a slow diffusion through deep trap centers.Evolution of contact potential difference profile in the fast lateral diffusion sub-step was simulated by solving a diffusion equation with a term describing the charge loss.In this way,the diffusion coefficient and the average life time at different temperatures were extracted.A value of 0.57 eV was calculated for the activation energy of the shallow trap centers in HfO2.

Unveiling localized electronic properties of ReS2 thin layers at nanoscale using Kelvin force probe microscopy combined with tip-enhanced Raman spectroscopy

Electronic properties of two-dimensional(2D) materials can be strongly modulated by localized strain. The typical spatial resolution of conventional Kelvin probe force microscopy(KPFM) is usually limited in a few hundreds of nanometers, and it is difficult to characterize localized electronic properties of 2D materials at nanoscales. Herein, tip-enhanced Raman spectroscopy(TERS) is proposed to combine with KPFM to break this restriction. TERS scan is conducted on ReS2bubbles deposited on a rough Au thin film to obtain strain distribution by using the Raman peak shift. The localized contact potential difference(CPD) is inversely calculated with a higher spatial resolution by using strain measured by TERS and CPD-strain working curve obtained using conventional KPFM and atomic force microscopy. This method enhances the spatial resolution of CPD measurements and can be potentially used to characterize localized electronic properties of 2D materials.

Probing CO on a rutile TiO_(2)(110)surface using atomic force microscopy and Kelvin probe force microscopy

Probing CO at a specific site on a metal oxide surface is essential for characterizing various applications such as CO oxidation,hydrogenation,and water–gas shift reaction.Herein,we use atomic force microscopy and Kelvin probe force microscopy to probe the CO on a rutile TiO_(2)(110)surface.Our results indicate that CO can be manipulated along the Ti row by the repulsive lateral force of“pushing”mode.Furthermore,the joint combination of precise manipulation and the distance dependence of local contact potential difference allow us to resolve the interatomic dipole moment and charge state of CO at atomic resolution.Therefore,we found that the negatively charged CO with the dipole moment of negative pole down on the rutile TiO_(2)(110)surface.Our results suppose that both the charge state as well as the on-surface dipole interaction are very effective for CO reaction on rutile TiO_(2)(110)surface.

Sodium dodecyl sulfate (SDS) as an effective corrosion inhibitor for Mg-8Li-3Al alloy in aqueous NaCl: A combined experimental and theoretical investigation

The corrosion inhibition behavior of Mg-8Li-3Al alloy in NaCl solution with sodium dodecyl sulfate(SDS)was investigated by hydrogen analysis,scanning electron microscopy(SEM),electrochemical test,scanning Kelvin probe force microscopy(SKPFM)and computational methods.Results showed that the corrosion resistance of Mg-8Li-3Al alloy in NaCl solution was effectively improved with SDS.The SEM and SKPFM results confirmed a dense,200 nm-thick SDS-adsorbed layer had formed on the alloy surface.The separation energy ΔE_(gap) and adsorption energy E_(ads) of SDS on the Mg surface were calculated by density functional theory and molecular dynamics simulations,respectively.And the corrosion inhibition mechanism was hypothesized and described.

Quantitative micro-electrochemical study of duplex stainless steel 2205 in 3.5wt%NaCl solution

Duplex stainless steels(DSSs)are suffering from various localized corrosion attacks such as pitting,selective dissolution,crevice corrosion during their service period.It is of great value to quantitatively analyze and grasp the micro-electrochemical corrosion behavior and related mechanism for DSSs on the micrometer or even smaller scales.In this work,scanning Kelvin probe force microscopy(SKPFM)and energy dispersive spectroscopy(EDS)measurements were performed to reveal the difference between the austenite phase and ferrite phase in microregion of DSS 2205.Then traditional electrochemical impedance spectroscopy(EIS)and potentiodynamic polarization(PDP)tests were employed for micro-electrochemical characterization of DSS 2205 with different proportion phases inϕ40 andϕ10μm micro holes.Both of them can only be utilized for qualitative or semi-quantitative micro-electrochemical characterization of DSS 2205.Coulostatic perturbation method was employed for quantitative micro-electrochemical characterization of DSS 2205.What is more,the applicable conditions of coulostatic perturbation were analyzed in depth by establishing a detailed electrochemical interface circuit.A series of microregion coulostatic perturbations for DSS 2205 with different proportion phases inϕ10μm micro holes showed that as the austenite proportion increases,the corresponding polarization resistance of microregion increases linearly.

Current improvement in substrate structured Sb2S3 solar cells with MoSe2 interlayer

Sb2S3 solar cells with substrate structure usually suffer from pretty low short circuit current(JSC)due to the defects and poor carrier transport.The Sb2S3,as a one-dimensional material,exhibits orientation-dependent carrier transport property.In this work,a thin MoSe2 layer is directly synthesized on the Mo substrate followed by depositing the Sb2S3 thin film.The x-ray diffraction(XRD)patterns confirm that a thin MoSe2 layer can improve the crystallization of the Sb2S3 film and induce(hk1)orientations,which can provide more carrier transport channels.Kelvin probe force microscopy(KPFM)results suggest that this modified Sb2S3 film has a benign surface with less defects and dangling bonds.The variation of the surface potential of Sb2S3 indicates a much more efficient carrier separation.Consequently,the power conversion efficiency(PCE)of the substrate structured Sb2S3 thin film solar cell is improved from 1.36%to 1.86%,which is the best efficiency of the substrate structured Sb2S3 thin film solar cell,and JSC significantly increases to 13.6 mA/cm^2.According to the external quantum efficiency(EQE)and C-V measurements,the modified crystallization and elevated built-in electric field are the main causes.

In situ strain electrical atomic force microscopy study on two-dimensional ternary transition metal dichalcogenides

Atomically thin two-dimensional(2D)alloys have attracted wide interests of study recently due to their potential in flexible electronic and optoelectronic applications.In particular,monolayer transition metal dichalcogenide(TMD)alloys have emerged as unique 2D semiconductors with tunable bandgaps,by means of alloying.However,response of surface electrical potential and barrier height to strain for 2D TMD alloys–electrode interface is rarely explored.Apparently,revealing such strain-dependent evolution of electrical properties is crucial for developing advanced 2D TMD based flexible electronics and opto-electronics.Here we performed in situ strain Kelvin probe force microscopy(KPFM)and conductive atomic force microscopy(C-AFM)investigations of monolayer Mo_(0.4)W_(0.6)Se_(2) on Au coated flexible substrate,where controlled uni-axial tensile strain is applied.Both contact potential difference(CPD)and Schottky barrier heights(SBH)of monolayer Mo_(0.4) W_(0.6)Se_(2) show obvious decreases with the increase of strain,which is mainly due to the strain-induced increment of TMD electron affinity.Our in situ strain photoluminescence(PL)measurements also indicate the changes of electronic band structures under strain.We further exploit the substrate effects on CPD by study the monolayer alloy on the mostly used substrates of SiO 2/Si and indium tin oxide(ITO)/glass.Our findings could strengthen the foundation for the potential applications of 2D TMD and their alloys in the fields of strain sensors,flexible photodetectors,and other wearable electronic devices.

Local Tuning of the Surface Potential in Silicon Carriers by Ion Beam Induced Intrinsic Defects

The immobilization of biomaterials on a carrier is the first step for many different applications in life science and medicine. The usage of surface-near electrostatic forces is one possible approach to guide the charged biomaterials to a specific location on the carrier. In this study, we investigate the effect of intrinsic defects on the surface potential of silicon carriers in the dark and under illumination by means of Kelvin probe force microscopy. The intrinsic defects were introduced into the carrier by local, stripe-patterned ion implantation of silicon ions with a fluence of 3 × 1013 Si ions/cm2 and 3 × 1015 Si ions/cm2 into a p-type silicon wafer with a dopant concentration of 9 × 1015 B/cm3. The patterned implantation allows a direct comparison between the surface potential of the silicon host against the surface potential of implanted stripes. The depth of the implanted silicon ions in the target and the concentration of displaced silicon atoms was simulated using the Stopping and Range of Ions in Matter (SRIM) software. The low fluence implantation shows a negligible effect on the measured Kelvin bias in the dark, whereas the large fluence implantation leads to an increased Kelvin bias, i.e. to a smaller surface work function according to the contact potential difference model. Illumination causes a reduced surface band bending and surface potential in the non-implanted regions. The change of the Kelvin bias in the implanted regions under illumination provides insight into the mobility and lifetime of photo-generated electron-hole pairs. Finally, the effect of annealing on the intrinsic defect density is discussed and compared with atomic force microscopy measurements on the 2nd harmonic. In addition, by using the Baumgart, Helm, Schmidt interpretation of the measured Kelvin bias, the dopant concentration after implantation is estimated.

Influence of Micro/Nano-Ti Particles on the Corrosion Behavior of AZ31-Ti Composites

Adding Ti particles to magnesium alloy simultaneously enhances its strength and ductility.However,how these particles influence on Mg alloy’s corrosion performance is seldom reported.The corrosion behavior of AZ31-Ti composites containing titanium nanoparticles(1.5 and 5 wt%)and micron particles(10 wt%)prepared by powder metallurgical in 3.5 wt%NaCl solution was investigated.The results indicate that Ti particles serve as the primary location for the cathodic hydrogen reduction reaction,resulting in intense galvanic corrosion between the Ti and Mg matrix.Ti nanoparticles distributed at the interface of the original AZ31 powder were in a discontinuous mesh structure,thus failing to act as a barrier against corrosion.The corrosion products with the existence of numerous cracks gradually peel off during the corrosion process and cannot protect the matrix.The average corrosion rate P_(w) of AZ31,AZ31-1.5%Ti,AZ31-5%Ti,and AZ31-10%Ti after 7 days of immersion is 27.55,105.65,283.67,and 99.35 mm/y,respectively.Therefore,AZ31-Ti composites can be considered as potential candidates for degradable fracturing tools.Otherwise,it is recommended to improve their corrosion resistance through surface treatment.

Quasi-in-situ Observation and SKPFM Studies on Phosphate Protective Film and Surface Micro-Galvanic Corrosion in Biological Mg-3Zn-xNd Alloys

The phosphate protective film and micro-galvanic corrosion of biological Mg-3Zn-xNd (x = 0, 0.6, 1.2) alloys were investigated by scanning and transmission electron microscopy, quasi-in-situ observation, scanning Kelvin probe force microscopy (SKPFM) and electrochemical tests. The results revealed the Mg-Zn-Nd phases formed in Mg-3Zn alloy contained with Nd. Adding Nd resulted in a significant decline in the cracks of the phosphate protective film and micro-galvanic corrosion of alloys, which were recorded by quasi-in-situ observation. In addition, the Volta potential difference of Mg-Zn-Nd/α-Mg (~ 188 mV) was lower than MgZn/α-Mg (~ 419 mV) and Zn-rich/α-Mg (~ 260 mV), and the corrosion rates of alloys markedly decreased after the addition of 0.6 wt% Nd. The improvement in corrosion resistance of Nd-containing alloys was mainly attributed to the following: (i) the addition of Nd reduced the Volta potential difference (second phases/α-Mg);(ii) the phosphate protective film containing Nd_(2)O_(3) deposited on the surface of the alloys, effectively preventing the penetration of harmful anions.

Nanotribological properties and scratch resistance of MoS_(2)bilayerona SiO_(2)/Si substrate

The tribological properties and scratch resistance of MoS_(2)bilayer deposited on SiO_(2)/Si substrates prepared via chemical vapor deposition are investigated.Friction force microscopy(FFM)is employed to investigate the friction and wear properties of the MoS_(2)bilayer at the nanoscale by applying a normal load ranging from 200 to 1,000 nN.Scratch resistance is measured using the scratch mode in FFM based on a linearly increasing load from 100 to 1,000 nN.Kelvin probe force microscopy(KPFM)is performed to locally measure the surface potential in the tested surface to qualitatively measure the wear/removal of Mos,layers and identify critical loads associated with the individual failures of the top and bottom layers.The analysis of the contact potential difference values as well as that of KPFM,friction,and height images show that the wear/removal of the top and bottom layers in the MoS_(2)bilayer system occurred consecutively.The FFM and KPFM results show that the top MoS_(2)layer begins to degrade at the end of the low friction stage,followed by the bottom layer,thereby resulting in a transitional friction stage owing to the direct contact between the diamond tip and SiO_(2)substrate.In the stable third stage,the transfer of lubricious MoS_(2)debris to the tip apex results in contact between the MoS_(2)-transferred tip and SiO_(2).Nanoscratch test results show two ranges of critical loads,which correspond to the sequential removal of the top and bottom layers.

Unusual local electric field concentration in multilayer ceramic capacitors

Local electric-field around multitype pores(dielectric pore,interface pore,electrode pore)in multilayer ceramic capacitors(MLCCs)was investigated using Kelvin probe force microscopy combined with the finite element simulation to understand the effect of pores on the electric reliability of MLCCs.Electricfield is found to be concentrated significantly in the vicinity of these pores and the strength of the local electric-field is 1.5e5.0 times of the nominal strength.Unexpectedly,the concentration degree of the pores in the inner electrode is much higher than that in the dielectrics and dielectric-electrode interfaces.Meanwhile,geometry orientations are found to have a remarkable influence on the local electric field strength.The pores act as an insulation degradation precursor via local electric,thermal center,and oxygen vacancies accumulation center.Such unusual local electric field concentration of multitype pores can provide new insights into the understanding of insulation degradation evolution,processing tailoring and design optimization for MLCCs.

Observation of room‐temperature out‐of‐plane switchable electric polarization in supported 3R‐MoS_(2) monolayers

Two‐dimensional(2D)ferroelectrics have attracted considerable attention due to their potential in the development of devices of miniaturization and multifunction.Although several van der Waals(vdW)‐layered materials show ferroelectricity,the experimental demonstrations of ferroelectric behavior in monolayers are very limited.Here we report the observation of room‐temperature out‐of‐plane switchable electric polarization in supported MoS_(2) monolayers exfoliated from 3R‐stacked bulk crystals under ambient conditions.Using in situ piezoelectric force microscopy and Kelvin probe force microscopy in a glovebox,we reveal that trapped water/ice molecules are responsible for this switchable electric polarization and this conclusion is strongly supported by theoretical simulations.It is worth noting that the water/ice trapping in the monolayers exfoliated from 2H‐stacked MoS_(2) crystals is not as much as that in 3R monolayers and,consequently,the out‐of‐plane electric polarization is missing there.Our findings indicate that monolayers with a trapped single layer of polar molecules might be emerging alternatives to 2D ferroelectrics.Furthermore,the stacking sequences may bring new properties and applications to 2D vdW materials not only when we stack them up but also when we thin them down.

Layer-dependent and light-tunable surface potential of two-dimensional indium selenide(InSe)flakes

As a fundamental surface property of two-dimensional(2 D)materials,surface potential is critical for their emerging electronic applications and essential for van der Waals heterostructure engineering.Here,we report the surface potential of few-layer InSe.The effect of layer count,light intensity and different deposited substrates is considered.Few-layer InSe flakes were exfoliated from bulk InSe crystals on Si/SiO_(2)with 300-nm-thick thermal oxide and Si/SiO_(2)with 300-nm-thick thermal oxide and prefabricated micro-wells with 3μm in diameter.The samples were measured by Kelvin probe force microscopy and tuned by an integrated 405-nm(3.06 eV)laser.Based on the work function of SiO_(2)(5.00 eV),the work functions of supported and suspended InSe are determined.These results show that the work function of InSe decreases with the increase in the layer count of both supported InSe and suspended InSe.Besides,by introducing a tunable laser light,the influence of light intensity on surface potential of supported InSe was studied.The surface potential(SP)and surface potential shift between light and dark states(ASP=SP_(lignt)-SP_(dark))of supported InSe were measured and determined.These results present that the surface potential of supported InSe decreases with the increase in the light intensity and also decreases with the increase in the layer count.This is evident that light excites electrons,resulting in decreased surface potential,and the amount of electrons excited is correlated with light intensity.Meanwhile,⊿SP between light and dark states decreases with the increase in the layer count,which suggests that the influence of light illumination decreases with the increase in the layer count of few-layer InSe flakes.

Ferroelectric polarization reversal tuned by magnetic field in a ferroelectric BiFeO3/Nb-doped SrTiO3 heterojunction

Interracial resistive switching of a ferroelectric semiconductor heterojunction is highly advantageous for the newly developed ferroelectric memristors. Moreover, the interfacial state in the ferroelectric semiconductor heterojunction can be gradually modified by polarization reversal, which may give rise to continuously tunable resistive switching behavior. In this work, the interfacial state of a ferroelectric BiFeO3/Nb-doped SrTiO3 junction was modulated by ferroelectric polarization reversal. The dynamics of surface screening charges on the BiFeO3 layer was also investigated by surface potential measure- ments, and the decay of the surface potential could be speeded up by the magnetic field. Moreover, ferroelectric polarization reversal of the BiFeO3 layer was tuned by the magnetic field. This finding could provide a method to enhance the ferroelectric and electrical properties of ferroelectric BiFeO3 films by tuning the magnetic field.