With the analysis of experiment and theory on GaN HEMT devices under DC sweep,an improved model for kink effect based on advanced SPICE model for high electron mobility transistors(ASM-HEMT)is pro⁃posed,considering th...With the analysis of experiment and theory on GaN HEMT devices under DC sweep,an improved model for kink effect based on advanced SPICE model for high electron mobility transistors(ASM-HEMT)is pro⁃posed,considering the relationship between the drain/gate-source voltage and kink effect.The improved model can not only accurately describe the trend of the drain-source current with the current collapse and kink effect,but also precisely fit different values of drain-source voltages at which the kink effect occurs under different gatesource voltages.Furthermore,it well characterizes the DC characteristics of GaN devices in the full operating range,with the fitting error less than 3%.To further verify the accuracy and convergence of the improved model,a load-pull system is built in ADS.The simulated result shows that although both the original ASM-HEMT and the improved model predict the output power for the maximum power matching of GaN devices well,the im⁃proved model predicts the power-added efficiency for the maximum efficiency matching more accurately,with 4%improved.展开更多
The original online version of this article （Journal of Electronics （China）, Vol. 28, No.3, May 2011, pp.389-395; DOI： 10.1007/s11767-011-0549-1） unfortunately contains a mistake on the author affiliation of Page...The original online version of this article （Journal of Electronics （China）, Vol. 28, No.3, May 2011, pp.389-395; DOI： 10.1007/s11767-011-0549-1） unfortunately contains a mistake on the author affiliation of Page 389. The correct form is given below：展开更多
基金Supported by the National Key R&D Program of China(2022YFF0707800,2022YFF0707801)Primary Research&Development Plan of Jiangsu Province(BE2022070,BE2022070-2)。
文摘With the analysis of experiment and theory on GaN HEMT devices under DC sweep,an improved model for kink effect based on advanced SPICE model for high electron mobility transistors(ASM-HEMT)is pro⁃posed,considering the relationship between the drain/gate-source voltage and kink effect.The improved model can not only accurately describe the trend of the drain-source current with the current collapse and kink effect,but also precisely fit different values of drain-source voltages at which the kink effect occurs under different gatesource voltages.Furthermore,it well characterizes the DC characteristics of GaN devices in the full operating range,with the fitting error less than 3%.To further verify the accuracy and convergence of the improved model,a load-pull system is built in ADS.The simulated result shows that although both the original ASM-HEMT and the improved model predict the output power for the maximum power matching of GaN devices well,the im⁃proved model predicts the power-added efficiency for the maximum efficiency matching more accurately,with 4%improved.
文摘The original online version of this article （Journal of Electronics （China）, Vol. 28, No.3, May 2011, pp.389-395; DOI： 10.1007/s11767-011-0549-1） unfortunately contains a mistake on the author affiliation of Page 389. The correct form is given below：
