H型栅NMOS器件Kink效应的研究

H型栅NMOS器件因其强抗辐照和低功耗等优势已逐渐成为PDSOI电路设计中的核心器件。但H型栅NMOS器件的Ids-Vds曲线会在漏极电压较高时发生明显的翘曲现象,称为Kink效应。该效应严重影响一定工作条件下的电路性能和稳定性。为此,依据实测和TCAD仿真数据,分析了H型栅NMOS器件发生Kink效应的机理,并且基于0.15μm SOI工艺,进一步量化分析了顶层硅膜厚度、阱浓度、栅尺寸、温度以及总剂量辐照等方面对Kink效应的影响。最终结果表明,高漏极电压下NMOS器件体区积累大量空穴导致寄生NPN三极管开启,从而引发了Kink效应。本工作完善了H型栅NMOS器件Kink效应的研究,为PDSOI电路设计中抑制Kink效应提供了有益的参考。

Geometry dependent photoconductivity of In2S3 kinks synthesized by kinetically controlled thermal deposition

High quality In2S3 kinks were synthesized via a kinetically controlled thermal deposition process and their optoelectronic characteristics were systematically explored. The growth mechanism was attributed to the combination of kinetic dynamic, crystal fadal energy, and surface roughness. Two trap induced emission bands were evidenced via a low temperature cathodoluminescence （CL） study. Furthermore, the nanowire junctions demonstrated a degenerative photodetection performance, as compared to the straight arms, attributed to a stress-induced extra series resistance measured from the kinked area. The well-controllable shape of the inorganic nanostructures and the detailed exploration of their optoelectronic properties are particularly valuable for their further practical applications.

Synthesis and High Electrocatalytic Performance of Hexagram Shaped Gold Particles Having an Open Surface Structure with Kinks

Hexagram shaped gold particles and their analogues enclosed by high index facets with kinks have been successfully synthesized by reducing HAuCl4 with ascorbic acid （AA） in the presence of poly（diallyldimethylammonium chloride） at room temperature. By using electron microscopy, the surfaces of the hexagram shaped Au particle were found to be {541} planes, which contain high-density steps and kinks. In addition, it was found that hexagonal shield-like and other kind of particles present in the product were analogues of the hexagram shaped Au particles structure, in that they had the same surface structure. In order to confirm the surface structure of all the prepared particles, surface structure sensitive underpotential deposition of Pb was carried out, and the cyclic voltammetric profile was in accordance with the proposed {541} surface. Finally, structure-property relationships of the Au hexagrams were experimentally analyzed by employing the electrocatalytic oxidation of AA as a probe reaction. The electrocatalytic reactions of gold cubes with low-index {100} facets and gold trioctahedra with {221} facets were studied as references. The experimental results showed that the hexagram shaped Au particles and their analogues with exposed {541} facets have the highest catalytic activity among the three kinds of gold particles, owing to the high density of kink atoms. This study should motivate us to further explore methods for the preparation of other well-defined polyhedral metal nanocrystals enclosed by high index surfaces.

Advantages of rapid solidification over casting of Mg-0.4Zn-1Y alloy

The Mg-Y-Zn magnesium alloy system is commonly recognized for its remarkable combination of high strength and ductility,achieved even with minimal amounts of alloying elements.This exceptional performance is attributed to its unique microstructure,which includes Long-Period Stacking Ordered(LPSO)phases or the distinctive microstructure derived from the LPSO phase,referred to as the Mille-Feuille structure(MFS).This study systematically compares the traditional ingot metallurgy method with the rapid solidification technique,coupled with diverse heat treatments and extrusion processes.Microscopic analyses reveal variations in the presence of LPSO phases,Mille-Feuille structure,and grain size,leading to divergent mechanical and corrosion properties.The rapid solidification approach stands out,ensuring superior mechanical properties alongside a reasonable corrosion rate.

An improved ASM-HEMT model for kink effect on GaN devices

With the analysis of experiment and theory on GaN HEMT devices under DC sweep,an improved model for kink effect based on advanced SPICE model for high electron mobility transistors(ASM-HEMT)is pro⁃posed,considering the relationship between the drain/gate-source voltage and kink effect.The improved model can not only accurately describe the trend of the drain-source current with the current collapse and kink effect,but also precisely fit different values of drain-source voltages at which the kink effect occurs under different gatesource voltages.Furthermore,it well characterizes the DC characteristics of GaN devices in the full operating range,with the fitting error less than 3%.To further verify the accuracy and convergence of the improved model,a load-pull system is built in ADS.The simulated result shows that although both the original ASM-HEMT and the improved model predict the output power for the maximum power matching of GaN devices well,the im⁃proved model predicts the power-added efficiency for the maximum efficiency matching more accurately,with 4%improved.

Observation of Doppler shift f_(D) modulated by the internal kink mode using conventional reflectometry in the EAST tokamak

In this paper we present a new experimental observation using a conventional reflectometry technique,poloidal correlation reflectometry(PCR),in the Experimental Advanced Superconducting Tokamak(EAST).The turbulence spectrum detected by the PCR system exhibits an asymmetry and induced Doppler shift f_(D)during the internal kink mode(IKM)rotation phase.This Doppler shift f_(D)is the target measurement of Doppler reflectometry,but captured by conventional reflectometry.Results show that the Doppler shift f_(D)is modulated by the periodic changes in the effective angle between the probing wave and cutoff layer normal,but not by plasma turbulence.The fishbone mode and saturated long-lived mode are typical IKMs,and this modulation phenomenon is observed in both cases.Moreover,the value of the Doppler shift f_(D)is positively correlated with the amplitude of the IKM,even when the latter is small.However,the positive and negative frequency components of the Doppler shift f_(D)can be asymmetric,which is related to the plasma configuration.A simulated analysis is performed by ray tracing to verify these observations.These results establish a clear link between f_(D)and IKM rotation,and are helpful for studying the characteristics of IKM and related physical phenomena.

WORKING OUT THE KINKS

With growing uncertainties in world trade, the economy, climate change and many other issues, the leaders of 19 courn tries and the European Union as members of the Group of 20(G20),as well as 17 guest countries and international organizations met in Osaka, Japan, for two days to seek possible solutions.

Parametrically excited internal wave breathers and kinks in liquids

In parametrically excited Faraday experiment the non-propagating solitons-breathers, kinksand breather pairs-have been observed at the interface of two insoluble liquids with different densities.Phenomena observed at the interface are similar to those on the surface, except that the eigenfrequencies are remarkably red-shifted, and the wave forms are flatter and less stable due to the presence of the upper liquid. A nonlinear Schrodinger equation with damping and drive terms has been derived to explain the new observations. Both experiment and theory show that the free surface wave is a special case of the interface wave.

Synergetic deformation mechanisms in an Mg-Zn-Y-Zr alloy with intragranular LPSO structures

Deformation kink is one of the important strengthening mechanisms of the long-period-stacking-ordered(LPSO)phase containing magnesium(Mg)alloys,while the deformation twin is generally suppressed.To optimize the mechanical properties of LPSO containing Mg alloy by simultaneously exciting kink and twin,we successfully prepared the Mg-Zn-Y-Zr alloy featuring intragranular LPSO phase and free grain boundary LPSO phase by homogenization.We unraveled the corresponding strengthening and toughening mechanisms through transmission electron microscopy characterization and theoretical analysis.The high strength and good plasticity of the homogenized alloy benefit from the synergistic deformation mechanism of multiple kinking and twining in the grains.And the activation of kinking and twinning depends on the thicknesses of LPSO lamellae and their relative spacing.These results may shed light on optimizing the design of Mg alloys regulating the microstructure of LPSO phases.

Kinking-facilitated nano-crystallization in a shock compressed Mg-1Zn alloy

The local deformation behavior and dynamic recrystallization of a shock compressed Mg-1Zn alloy was investigated through EBSD and TEM.Since dislocation slipping and twinning were locally suppressed during high strain-rate deformation,a more flexible kinking deformation was activated to adjusted local orientation and facilitate slipping and twinning within the kinks.Meanwhile,due to the slow heat dissipation that resulted in a local temperature elevating,the kink bands were evolved into deformation bands with recrystallized nano-grains.Such a finding provides a new perspective for kinking-facilitated nanocrystallization in Mg alloys and other anisotropic metallic materials.

Effect of ideal internal MHD instabilities on NBI fast ion redistribution in ITER 15 MA scenario

Transport of fast ions is a crucial issue during the operation of ITER.Redistribution of neutral beam injection(NBI)fast ions by the ideal internal magnetohydrodynamic(MHD)instabilities in ITER is studied utilizing the guiding-center code ORBIT(White R B and Chance M S 1984Phys.Fluids 272455).Effects of the perturbation amplitude A of the internal kink,the perturbation frequency f of the fishbone instability,and the toroidal mode number n of the internal kink are investigated,respectively,in this work.The n=1 internal kink mode can cause NBI fast ions transporting in real space from regions of 0<s≤0.32 to 0.32<s≤0.53,where s labels the normalized plasma radial coordinate.The transport of fast ions is greater as the perturbation amplitude increases.The maximum relative change of the number of fast ions approaches 5%when the perturbation amplitude rises to 500 G.A strong transport is generated between the regions of 0<s≤0.05 and 0.05<s≤0.12 in the presence of the fishbone instability.Higher frequency results in greater transport,and the number of fast ions in 0<s≤0.05 is reduced by 30%at the fishbone frequency of 100 k Hz.Perturbations with higher n will lead to the excursion of fast ion transport regions outward along the radial direction.The loss of fast ions,however,is not affected by the internal MHD perturbation.Strong transport from 0<s≤0.05 to 0.05<s≤0.12 does not influence the plasma heating power of ITER,since the NBI fast ions are still located in the plasma core.On the other hand,the influence of fast ion transport from 0<s≤0.32 to 0.32<s≤0.53 needs further study.

Analytical method for cell displacement defect quantum-dot cellular automata primitive

Quantum-dot cellular automata(QCA)is an emerging computational paradigm which can overcome scaling limitations of the existing complementary metal oxide semiconductor(CMOS)technology.The existence of defects cannot be ignored,considering the fabrication of QCA devices at the molecular level where it could alter the functionality.Therefore,defects in QCA devices need to be analyzed.So far,the simulation-based displacement defect analysis has been presented in the literature,which results in an increased demand in the corresponding mathematical model.In this paper,the displacement defect analysis of the QCA main primitive,majority voter(MV),is presented and carried out both in simulation and mathematics,where the kink energy based mathematical model is applied.The results demonstrate that this model is valid for the displacement defect in QCA MV.

等离子体压强对Line-tied扭曲不稳定性增长率和本征函数的影响

应用半解析方法,研究了直圆柱位形下等离子体压强P0分别为P0=0、P0=常数和P0=f(r)时Line-tied扭曲不稳定性的增长率和二维径向本征函数的演化规律。结果表明,P0=0和P0=常数时的轴向波数k的范围相同,但P0=常数时的增长率比P0=0时的小。P0=f(r)时的轴向波数k的范围和增长率则都比P0=0时的大,同时磁流体的速度变化也较大。因此,P0=f(r)更接近实际的物理模型(例如日冕的喷射问题)。

A Novel Ultra-Thin Channel Poly-Si TFT Technology

A novel low temperature poly\|Si(LTPS) ultra\|thin channel thin film transistor (UTC\|TFT) technology is proposed. The UTC\|TFT has an ultra\|thin channel region (30nm) and a thick drain/source region (300nm). The ultra\|thin channel region that can result in a lower grain\|boundary trap density in the channel is connected to the heavily\|doped thick drain/source region through a lightly\|doped overlapped region. The overlapped lightly\|doped region provides an effective way for the electric field to spread in the channel near the drain at high drain biases, thereby reducing the electric field there significantly. Simulation results show the UTC\|TFT experiences a 50% reduction in peak lateral electric field compared to that of the conventional TFT. With the low grain\|boundary trap density and low drain electric field, excellent current saturation characteristics and high drain breakdown voltage are achieved in the UTC\|TFT. Moreover, this technology provides the complementary LTPS\|TFTs with more than 2 times increase in on\|current, 3.5 times reduction in off\|current compared to the conventional thick channel LTPS TFTs.

Improved Breakdown Voltage of Partially Depleted SOI nMOSFETs with Half-Back-Channel Implantation

FB （floating-body） and BC （body-contact） partially depleted SOI nMOSFETs with HBC（half-back-channel） implantation are fabricated. Test results show that such devices have good performance in delaying the occurrence of the “kink” phenomenon and improving the breakdown voltage as compared to conventional PDSOI nMOS- FETs,while not decreasing the threshold voltage of the back gate obviously. Numerical simulation shows that a reduced electrical field in the drain contributes to the improvement of the breakdown voltage and a delay of the “kink” effect. A detailed analysis is given for the cause of such improvement of breakdown voltage and the delay of the “kink” effect.

电离辐射中SOI MOSFETs的背栅异常kink效应研究

采用10keVX射线研究了部分耗尽SOIMOSFETs的总剂量辐射效应.实验结果显示,在整个辐射剂量范围内,前栅特性保持良好;而nMOSFET和pMOSFET的背栅对数Id-Vg2曲线中同时出现了异常kink效应.分析表明电离辐射在埋氧/顶层硅(BOX/SOI)界面处产生的界面态陷阱是导致异常kink效应产生的原因.基于MEDICI的二维器件模拟结果进一步验证了这个结论.

SOI-NMOS场效应晶体管的Kink特性分析

本文研究了在室温(RT)、液氮温度(LN)和液氮温度(LHe)下的SOI-NMOS场效应晶体管的电流—电压特性。研究的器件制作在二氧化硅上的经激光退火后的多晶硅薄膜体上。结果表明室温下带有薄膜引出端的晶体管的I_D—V_D特性曲线的Kink形状和液氦下观测到的N-MOS场效应晶体管的Kink形状很类似。实验还表明Kink大小是液氮下比室温下大、液氦下比液氮下的大。应用电容效应,低温下载流子“冻结”机制和不同偏压下载流子产生和复合的物理过程分析可以相应地解释不同温度下Kink效应。

Nonlinear Vortex Structures in Obliquely Rotating Fluid

In this paper, we find a new large scale instability which appears in obliquely rotating flow with the small scale turbulence, generated by external force with small Reynolds number. The external force has no helicity. The theory is based on the rigorous method of multi-scale asymptotic expansion. Nonlinear equations for instability are obtained in the third order of the perturbation theory. In this article, we explain in detail the nonlinear stage of the instability and we find the nonlinear periodic vortices and the vortex kinks of Beltrami type.

一类检测DNA凝聚过程中“铰链结构”的氟化物探针

Bloomfield很早指出,在DNA凝聚过程中,急剧弯折会导致DNA分子中出现"铰链(kink)"结构,但未见实验证实。基于紫外可见分光光度法,分别在精胺、亚精胺与DNA凝聚体系中加入氟化物以及氯化物,发现二者虽同为卤族,但对精胺-DNA凝聚体系的效应不同。氟离子使精胺-DNA凝聚体系中出现了"蓝移增色"现象,氯离子仅使该体系出现微弱的增色效应,而二者对亚精胺-DNA凝聚体系的效应基本相同,均出现微弱增色效应。基于氟离子特殊性质,设计一种能够有效探测DNA凝聚过程中"铰链(kink)"结构氟化物探针,而且证实,第二类"铰链(kink)"结构出现在精胺-DNA凝聚体系中。

A New Poly-Si TFTs DC Model for Device Characterization and Circuit Simulation

A new physical current-voltage model for polysilicon thin-film transistors （poly-Si TFTs） is presented. Taking the V-shaped exponential distribution of trap states density into consideration,explicit calculation of surface potential is derived using the Lambert W function, which greatly improves computational efficiency and is critical in circuit simulation. Based on the exponential density of trap states and the calculated surface potential, the drain current characteristics of the subthreshold and the strong inversion region are predicted. A complete and unique drain current expression, including kink effect, is deduced. The model and the experimental data agree well over a wide range of channel lengths and operational regions.