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Itinerant to relocalized transition of felectrons in the Kondo insulator CeRu_(4)Sn_(6) 被引量:1
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作者 Fan-Ying Wu Qi-Yi Wu +14 位作者 Chen Zhang Yang Luo Xiangqi Liu Yuan-Feng Xu Dong-Hui Lu Makoto Hashimoto Hao Liu Yin-Zou Zhao Jiao-Jiao Song Ya-Hua Yuan Hai-Yun Liu Jun He Yu-Xia Duan Yan-Feng Guo Jian-Qiao Meng 《Frontiers of physics》 SCIE CSCD 2023年第5期153-160,共8页
The three-dimensional electronic structure and the nature of Ce 4f electrons of the Kondo insulator CeRu_(4)Sn_(6)are investigated by angle-resolved photoemission spectroscopy,utilizing tunable photon energies.Our res... The three-dimensional electronic structure and the nature of Ce 4f electrons of the Kondo insulator CeRu_(4)Sn_(6)are investigated by angle-resolved photoemission spectroscopy,utilizing tunable photon energies.Our results reveal(i)the three-dimensional k-space nature of the Fermi surface,(ii)the localized-to-itinerant transition of f electrons occurs at a much high temperature than the hybridization gap opening temperature,and(iii)the“relocalization”of itinerant f-electrons below 25 K,which could be the precursor to the establishment of magnetic order. 展开更多
关键词 kondo insulator heavy fermion ARPES electronic structure relocalization
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Quantum phase transition and destruction of Kondo effect in pressurized SmB6
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作者 yazhou zhou qi wu +19 位作者 priscila f.s.rosa rong yu jing guo wei yi shan zhang zhe wang honghong wang shu cai ke yang aiguo li zheng jiang shuo zhang xiangjun wei yuying huang peijie sun yi-feng yang zachary fisk qimiao si zhongxian zhao liling sun 《Science Bulletin》 SCIE EI CAS CSCD 2017年第21期1439-1444,共6页
SmB_6 has been a well-known Kondo insulator for decades, but recently attracts extensive new attention as a candidate topological system. Studying SmB_6 under pressure provides an opportunity to acquire the much-neede... SmB_6 has been a well-known Kondo insulator for decades, but recently attracts extensive new attention as a candidate topological system. Studying SmB_6 under pressure provides an opportunity to acquire the much-needed understanding about the effect of electron correlations on both the metallic surface state and bulk insulating state. Here we do so by studying the evolution of two transport gaps(low temperature gap E_l and high temperature gap E_h) associated with the Kondo effect by measuring the electrical resistivity under high pressure and low temperature(0.3 K) conditions. We associate the gaps with the bulk Kondo hybridization, and from their evolution with pressure we demonstrate an insulator-tometal transition at ~4 GPa. At the transition pressure, a large change in the Hall number and a divergence tendency of the electron-electron scattering coefficient provide evidence for a destruction of the Kondo entanglement in the ground state. Our results raise the new prospect for studying topological electronic states in quantum critical materials settings. 展开更多
关键词 kondo insulator Surface state SmB6 High pressure
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