A three-stage MMIC power amplifier operating from 6to 18GHz is fabricated using 0.25μm A1GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor（PHEMT）.The amplifier isfully monolithic,with all matching,bi...A three-stage MMIC power amplifier operating from 6to 18GHz is fabricated using 0.25μm A1GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor（PHEMT）.The amplifier isfully monolithic,with all matching,biasing,and DC block circuitry included on the chip.Thepower amplifier has an average power gain of 19dB over 6～18GHz.At operation frequenciesfrom 6 to 18GHz,the output power is above 33.3dBm,and the maximum output power of the MMICis 34.7dBm at 10Ghz.The input return loss is less than-10db and the out-put return is lessthan-6dB over operating frequency.This power amplifier has,to our knowledge,the best powergain flatness reported at C-X-Ku-band applications.展开更多
Using an in-house MMIC and an off-chip,high-quality varactor, a novel wide band VCO covered Ku band is introduced. In contrast to HMIC technology, this method reduces the complexity of microchip assembly. More importa...Using an in-house MMIC and an off-chip,high-quality varactor, a novel wide band VCO covered Ku band is introduced. In contrast to HMIC technology, this method reduces the complexity of microchip assembly. More importantly,it overcomes the constraint that the standard commercial GaAs pHEMT MMIC process is usually not compatible with highquality varactors for VCO,and it significantly improves the phase noise and frequency tuning linearity performances compared to either MMIC or HMIC implementation. It is a novel and high-quality method to develop microwave and millimeter wave VCO.展开更多
Monolithic GaAs pin diode single pole double throw （SPDT） switches based on the fabrication technology of IMECAS are designed,fabricated,and tested. These SPDT switches achieve an insertion loss of 1.5dB,isolation o...Monolithic GaAs pin diode single pole double throw （SPDT） switches based on the fabrication technology of IMECAS are designed,fabricated,and tested. These SPDT switches achieve an insertion loss of 1.5dB,isolation of 32dB, and input and output return losses over 10dB from 8 to 20GHz. The switch design uses 2.5μm thick I-region GaAs pin diodes and a series-shunt-shunt switch topology in each arm. These performance characteristics are measured at a normal bias setting of 1.3V,which corresponds to 7mA of series diode bias current.展开更多
This paper deals with the backscatter coefficients known as sigma0 at Ku band and C band based on the GDR-M (Merged Geophysical Data Record) of TOPEX/Poseidon (T/P) through Jan.1993 to Dec.2004 over land surface of Ch...This paper deals with the backscatter coefficients known as sigma0 at Ku band and C band based on the GDR-M (Merged Geophysical Data Record) of TOPEX/Poseidon (T/P) through Jan.1993 to Dec.2004 over land surface of China.After smoothing and interpolating the backscatter coefficients for both bands, we achieve the 5′×5′ grid data and the time series of backscatter coefficients in 12 years.The spatial distribution of sigma0 over typical areas (wetland, desert, mountainous area, agriculture base, etc.) of Chinese territory is analyzed and discussed.The fast Fourier transformation (FFT) is used to detect the cycles of seasonal variations of sigma0 time series and gives that the annual period is the major cycle.Meanwhile a semiannual period is also found in some places.We use the least squares method on both periods and find that the amplitude of annual period is obviously greater than that of semi-annual period.The relationship among the anomalousness of time series, variations of environment and climate change, and the serious natural calamity (flood, drought) is also discussed.Data of topography slope extracted from SRTM are used to do correlation analysis with the backscatter coefficients in parts of China to quantify the impact of slope on backscatter coefficients in Ku and C bands, and the results show that they all have a negative correlation but the magnitudes are different in different places with different coverages.Such as the area of Liaoning and Jilin has the maximum correlation -0.56, the Taklimakan Desert has the minimum correlation -0.11, and the other places commonly have correlations in (-0.3, -0.5).展开更多
文摘A three-stage MMIC power amplifier operating from 6to 18GHz is fabricated using 0.25μm A1GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor（PHEMT）.The amplifier isfully monolithic,with all matching,biasing,and DC block circuitry included on the chip.Thepower amplifier has an average power gain of 19dB over 6～18GHz.At operation frequenciesfrom 6 to 18GHz,the output power is above 33.3dBm,and the maximum output power of the MMICis 34.7dBm at 10Ghz.The input return loss is less than-10db and the out-put return is lessthan-6dB over operating frequency.This power amplifier has,to our knowledge,the best powergain flatness reported at C-X-Ku-band applications.
文摘Using an in-house MMIC and an off-chip,high-quality varactor, a novel wide band VCO covered Ku band is introduced. In contrast to HMIC technology, this method reduces the complexity of microchip assembly. More importantly,it overcomes the constraint that the standard commercial GaAs pHEMT MMIC process is usually not compatible with highquality varactors for VCO,and it significantly improves the phase noise and frequency tuning linearity performances compared to either MMIC or HMIC implementation. It is a novel and high-quality method to develop microwave and millimeter wave VCO.
文摘Monolithic GaAs pin diode single pole double throw （SPDT） switches based on the fabrication technology of IMECAS are designed,fabricated,and tested. These SPDT switches achieve an insertion loss of 1.5dB,isolation of 32dB, and input and output return losses over 10dB from 8 to 20GHz. The switch design uses 2.5μm thick I-region GaAs pin diodes and a series-shunt-shunt switch topology in each arm. These performance characteristics are measured at a normal bias setting of 1.3V,which corresponds to 7mA of series diode bias current.
基金supported by National Natural Science Founda-tion of China(Grant Nos.40974004 and 40774009)International Sci&Tech Cooperation Program of China(Grant No.2009DFB00130)+1 种基金Key Laboratory of Mapping from Space of NASMG,China(Grant No.K201103)the R&I Team Supporting Program and Graduate Sci.&Tech Innovation Fund of SDUST,China(Grant No.YCB110010)
文摘This paper deals with the backscatter coefficients known as sigma0 at Ku band and C band based on the GDR-M (Merged Geophysical Data Record) of TOPEX/Poseidon (T/P) through Jan.1993 to Dec.2004 over land surface of China.After smoothing and interpolating the backscatter coefficients for both bands, we achieve the 5′×5′ grid data and the time series of backscatter coefficients in 12 years.The spatial distribution of sigma0 over typical areas (wetland, desert, mountainous area, agriculture base, etc.) of Chinese territory is analyzed and discussed.The fast Fourier transformation (FFT) is used to detect the cycles of seasonal variations of sigma0 time series and gives that the annual period is the major cycle.Meanwhile a semiannual period is also found in some places.We use the least squares method on both periods and find that the amplitude of annual period is obviously greater than that of semi-annual period.The relationship among the anomalousness of time series, variations of environment and climate change, and the serious natural calamity (flood, drought) is also discussed.Data of topography slope extracted from SRTM are used to do correlation analysis with the backscatter coefficients in parts of China to quantify the impact of slope on backscatter coefficients in Ku and C bands, and the results show that they all have a negative correlation but the magnitudes are different in different places with different coverages.Such as the area of Liaoning and Jilin has the maximum correlation -0.56, the Taklimakan Desert has the minimum correlation -0.11, and the other places commonly have correlations in (-0.3, -0.5).
