To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 ? which is measured optically....To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 ? which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to –5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.展开更多
With the increasing interest in radio frequency switch by using the CMOS circuit technology for the wireless communication systems is in demand. A traditional n-MOS Single-Pole Double-Throw (SPDT) switch has good perf...With the increasing interest in radio frequency switch by using the CMOS circuit technology for the wireless communication systems is in demand. A traditional n-MOS Single-Pole Double-Throw (SPDT) switch has good performances but only for a single operating frequency. For multiple operating frequencies, to transmitting or receiving information through the multiple antennas systems, known as MIMO systems, it a new RF switch is required which should be capable of operating with multiple antennas and frequencies as well as minimizing signal distortions and power consumption. We already have proposed a Double-Pole Four-Throw (DP4T) RF switch and in this research article we are discussing a process for the characterization of the MOSFET with Virtual Instrumentation. The procedure to characterize oxide and conductor layers that are grown or deposited on semiconductors is by studying the characteristics of a MOS capacitor that is formed of the conductor (Metal)-insulator-semiconductor layers for the purpose of RF CMOS as a switch is presented. For a capacitor formed of Metal-silicon dioxide-silicon layers with a thick oxide measured opti-cally. Some of the calculated material parameters are away from the expected values. These errors might be due to several factors such as a possible offset capacitance of the probes due to improper contact with the wafer which is measured by using the LCR (Inductance-Capacitance-Resistance) meter with the help of Visual Engineering Environment Programming (VEE Pro, a Agilent product).展开更多
Mixed Mg-Cr Nano ferrites having the compositional formula MgCrxFe2-xO4 (where x = 0.0, 0.1, 0.3, 0.5, 0.7, 0.9 and 1.0) were synthesized using Citrate-Gel auto combustion method. Structural characterization was carri...Mixed Mg-Cr Nano ferrites having the compositional formula MgCrxFe2-xO4 (where x = 0.0, 0.1, 0.3, 0.5, 0.7, 0.9 and 1.0) were synthesized using Citrate-Gel auto combustion method. Structural characterization was carried out by XRD Analysis which confirmed the formation of single phase cubic spinel structure without any impurity peak. The dielectric properties such as Dielectric constant (ε'), Dielectric Loss tangent (tan δ) and AC conductivity (σAC) of Mg-Cr nano ferrites were studied at room temperature in the frequency range of 2 Hz - 2 MHz using Agilent E4980A Precision LCR meter. The dielectric constant, loss tangent and AC conductivity shows a normal behavior with frequency. A qulitative explanation is given for composition and frequency dependance of the dielectric constant, dielectric loss tangent and AC conductivity of the nano ferrite. The loss tangent for the synthesized samples was found to be decreased from 0.09 to 0.054 in higher frequency region showing the potential applications of these materials in high frequency micro wave devices. On the basis of these results the explanation of dielectric mechanism in Mg-Cr ferrites is suggested.展开更多
文摘To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 ? which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to –5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.
文摘With the increasing interest in radio frequency switch by using the CMOS circuit technology for the wireless communication systems is in demand. A traditional n-MOS Single-Pole Double-Throw (SPDT) switch has good performances but only for a single operating frequency. For multiple operating frequencies, to transmitting or receiving information through the multiple antennas systems, known as MIMO systems, it a new RF switch is required which should be capable of operating with multiple antennas and frequencies as well as minimizing signal distortions and power consumption. We already have proposed a Double-Pole Four-Throw (DP4T) RF switch and in this research article we are discussing a process for the characterization of the MOSFET with Virtual Instrumentation. The procedure to characterize oxide and conductor layers that are grown or deposited on semiconductors is by studying the characteristics of a MOS capacitor that is formed of the conductor (Metal)-insulator-semiconductor layers for the purpose of RF CMOS as a switch is presented. For a capacitor formed of Metal-silicon dioxide-silicon layers with a thick oxide measured opti-cally. Some of the calculated material parameters are away from the expected values. These errors might be due to several factors such as a possible offset capacitance of the probes due to improper contact with the wafer which is measured by using the LCR (Inductance-Capacitance-Resistance) meter with the help of Visual Engineering Environment Programming (VEE Pro, a Agilent product).
文摘Mixed Mg-Cr Nano ferrites having the compositional formula MgCrxFe2-xO4 (where x = 0.0, 0.1, 0.3, 0.5, 0.7, 0.9 and 1.0) were synthesized using Citrate-Gel auto combustion method. Structural characterization was carried out by XRD Analysis which confirmed the formation of single phase cubic spinel structure without any impurity peak. The dielectric properties such as Dielectric constant (ε'), Dielectric Loss tangent (tan δ) and AC conductivity (σAC) of Mg-Cr nano ferrites were studied at room temperature in the frequency range of 2 Hz - 2 MHz using Agilent E4980A Precision LCR meter. The dielectric constant, loss tangent and AC conductivity shows a normal behavior with frequency. A qulitative explanation is given for composition and frequency dependance of the dielectric constant, dielectric loss tangent and AC conductivity of the nano ferrite. The loss tangent for the synthesized samples was found to be decreased from 0.09 to 0.054 in higher frequency region showing the potential applications of these materials in high frequency micro wave devices. On the basis of these results the explanation of dielectric mechanism in Mg-Cr ferrites is suggested.
