0.8μm LDD CMOS Reliability Experiments and Analysis

In order to study the abnormal substrate current and reliability problem of LDDMOSFET observed in experiments, two dimensional numerical simulation for devices has been performed, and an optimum process for LDD is suggested.

LDD-CMOS中ESD及其相关机理

LDD工艺是CMOS集成电路进入亚微米后应用最广泛的技术 ,该技术很好地改善了沟道电场分布 ,避免了在器件漏端的强场效应 ,在可靠性方面明显地提高器件及电路的热载流子寿命 .然而 ,LDD结构的抗ESD的能力却大大降低了 .文中通过实验和分析 ,研究了在ESD过程中 ,LDDgg nMOS器件的Snapback对器件潜在损伤的影响 。