In order to study the abnormal substrate current and reliability problem of LDDMOSFET observed in experiments, two dimensional numerical simulation for devices has been performed, and an optimum process for LDD is sug...In order to study the abnormal substrate current and reliability problem of LDDMOSFET observed in experiments, two dimensional numerical simulation for devices has been performed, and an optimum process for LDD is suggested.展开更多
文摘In order to study the abnormal substrate current and reliability problem of LDDMOSFET observed in experiments, two dimensional numerical simulation for devices has been performed, and an optimum process for LDD is suggested.