This paper presents a simple novel technique-forward gated-diode R-G current method-to determine the lateral lightly-doped source/drain (S/D) region interface state density and effective surface doping concentration o...This paper presents a simple novel technique-forward gated-diode R-G current method-to determine the lateral lightly-doped source/drain (S/D) region interface state density and effective surface doping concentration of the lightly-doped drain (LDD) N- MOSFET's simultaneously. One interesting result of the numerical analysis is the direct characterization of the interface state density and characteristic gate voltage values corresponding to LDD effective surface doping concentration. It is observed that the S/D N- surface doping concentration and corresponding region's interface state density are R-G current peak position and amplitude dependent, respectively. It is convincible that the proposed method is well suitable for the characterization of deep sub-micron MOSFET's in the current ULSI technology.展开更多
In this paper,we present the effect of process parameters variations on Ⅰ-Ⅴ characteristics of LDD MOSFETs through a simulation study,applying also to any submicron device.In particular,we examine the effect of vari...In this paper,we present the effect of process parameters variations on Ⅰ-Ⅴ characteristics of LDD MOSFETs through a simulation study,applying also to any submicron device.In particular,we examine the effect of variation of ionic implantation for different channel doping involved in MOSFET production.At last,we examine a linear Ⅰ-Ⅴ model to simulate more adequately the effects of variation of the process parameters as correction to the base model.展开更多
基金Sponsored by Motorola CPTL(Contract No:MSPSDDLCHINA-0004)
文摘This paper presents a simple novel technique-forward gated-diode R-G current method-to determine the lateral lightly-doped source/drain (S/D) region interface state density and effective surface doping concentration of the lightly-doped drain (LDD) N- MOSFET's simultaneously. One interesting result of the numerical analysis is the direct characterization of the interface state density and characteristic gate voltage values corresponding to LDD effective surface doping concentration. It is observed that the S/D N- surface doping concentration and corresponding region's interface state density are R-G current peak position and amplitude dependent, respectively. It is convincible that the proposed method is well suitable for the characterization of deep sub-micron MOSFET's in the current ULSI technology.
文摘In this paper,we present the effect of process parameters variations on Ⅰ-Ⅴ characteristics of LDD MOSFETs through a simulation study,applying also to any submicron device.In particular,we examine the effect of variation of ionic implantation for different channel doping involved in MOSFET production.At last,we examine a linear Ⅰ-Ⅴ model to simulate more adequately the effects of variation of the process parameters as correction to the base model.
