The authors present a polymethyl methacrylate(PMMA)-based,reusable microsphere mask used in the laser sub-wavelength photolithography.In order to overcome the diffraction limit to achieve nano-structuring using l-|im ...The authors present a polymethyl methacrylate(PMMA)-based,reusable microsphere mask used in the laser sub-wavelength photolithography.In order to overcome the diffraction limit to achieve nano-structuring using l-|im laser wavelength,the photolithography technique was conventionally characterized by applying a one-off monolayer of silica microspheres serving as Mie scatterers.Addressing the major limitation of this technique,which was that the monolayer of microspheres must be prepared on the sample surface prior to fabrication,the proposed hot press approach could firmly fuse the 1silica microspheres to the PMMA base without the use of adhesives.The PMMA-based microsphere mask could hence reduce the amount of work for the monolayer preparation and was proven reusable for at least 20 times without damage to top or bottom surfaces.Using the mask,dimples that were 0.7 pm in diameter and 40 nm in depth were produced on tool steel by a single pulse of picosecond laser irradiation.展开更多
Photolithography has been a major enabler for the continuous shrink of the semiconductor manufacturing design rules.Throughout the years of the development of the photolithography,many new technologies have been inven...Photolithography has been a major enabler for the continuous shrink of the semiconductor manufacturing design rules.Throughout the years of the development of the photolithography,many new technologies have been invented and successfully implemented,such as image projection lithography,chemically amplified photoresist,phase shifting mask,optical proximity modeling and correction,etc.From 0.25μm technology to the current 7 nm technology,the linewidth has been shrunk from 250 nm to about 20 nm,or 12.5 times.Although imaging resolution is proportional to the illumination wavelength,with the new technologies,the wavelength has only been shrunk from 248 nm to 134.7 nm(193 nm immersion in water),less than 2 times.Would it mean that the imaging performance has been continuously declining?Or we have yet fully utilized the potential of the photolithography technology?In this paper,we will present a study on the key parameters and process window performance of the image projection photolithography from 0.25μm node to the current 7 nm node.展开更多
基金a core-funded project(No.C16-M-034)of SIMTech,A*STAR Research Entities.
文摘The authors present a polymethyl methacrylate(PMMA)-based,reusable microsphere mask used in the laser sub-wavelength photolithography.In order to overcome the diffraction limit to achieve nano-structuring using l-|im laser wavelength,the photolithography technique was conventionally characterized by applying a one-off monolayer of silica microspheres serving as Mie scatterers.Addressing the major limitation of this technique,which was that the monolayer of microspheres must be prepared on the sample surface prior to fabrication,the proposed hot press approach could firmly fuse the 1silica microspheres to the PMMA base without the use of adhesives.The PMMA-based microsphere mask could hence reduce the amount of work for the monolayer preparation and was proven reusable for at least 20 times without damage to top or bottom surfaces.Using the mask,dimples that were 0.7 pm in diameter and 40 nm in depth were produced on tool steel by a single pulse of picosecond laser irradiation.
文摘Photolithography has been a major enabler for the continuous shrink of the semiconductor manufacturing design rules.Throughout the years of the development of the photolithography,many new technologies have been invented and successfully implemented,such as image projection lithography,chemically amplified photoresist,phase shifting mask,optical proximity modeling and correction,etc.From 0.25μm technology to the current 7 nm technology,the linewidth has been shrunk from 250 nm to about 20 nm,or 12.5 times.Although imaging resolution is proportional to the illumination wavelength,with the new technologies,the wavelength has only been shrunk from 248 nm to 134.7 nm(193 nm immersion in water),less than 2 times.Would it mean that the imaging performance has been continuously declining?Or we have yet fully utilized the potential of the photolithography technology?In this paper,we will present a study on the key parameters and process window performance of the image projection photolithography from 0.25μm node to the current 7 nm node.
