Effects of Light-Emitting Diode (LED) Red and Blue Light on the Growth and Photosynthetic Characteristics of <i>Momordica charantia</i>L.

With andromonoecious Momordica charantia L. (bitter gourd) as material, three light qualities (50 μmol·m-2·s-1) including white LED light (WL), blue monochromatic light (B, 465 nm), and red monochromatic light (R, 650 nm) were carried out to investigate their effects on seed germination, physiological and biochemical parameters, sex differentiation and photosynthetic characteristics of bitter gourd. The results showed that compared to the WL treatment, the R treatment significantly promoted seed germination, seedling height elongation and soluble sugar content, the B treatment significantly increased seedling stem diameter, reducing sugar content and soluble protein content, the R and B treatments both significantly reduced sucrose content, but their POD activity showed no significant difference. Compared with the R treatment, the B treatment significantly increased the total female flower number and female flower nod ratio in 30 nods of main stems. The study of photosynthetic characteristics found that the R and B treatments could effectively increase the stomatal conductance (GS) of leaves, significantly improved the net photosynthetic rate (Pn) compared to the WL treatment, and the effect of the B treatment was better. Compared to the R and WL treatments, the B treatment increased the maximum photosynthetic rate (Pmax), apparent quantum efficiency (AQE) and light saturation point (LSP), and reduced the dark respiration rate (Rd) and light compensation point (LCP) of the leaves. Fit light response curves showed that the adaptability and utilization of weak light in bitter gourd were middle or below, but it showed higher adaptability and utilization of strong light. Thus, it suggests that Momordica charantia is a typical sun plan with lower Rd. In summary, it is concluded that blue light has a positive effect on the seed germination, seedling growth, sex differentiation and improving the photosynthetic performance, and this will lay the foundation for artificially regulating optimum photosynthesis using specific LEDs wavelength, and help to elucidate the relationship how light quality influences the sex differentiation of plant.

The strategies for preparing blue perovskite light-emitting diodes

Metal halide perovskites have attracted tremendous interest due to their excellent optical and electrical properties,and they find many promising applications in the optoelectronic fields of solar cells,light-emitting diodes,and photodetectors.Thanks to the contributions of international researchers,significant progress has been made for perovskite light-emitting diodes(Pero-LEDs).The external quantum efficiencies(EQEs)of Pero-LEDs with emission of green,red,and near-infrared have all exceeded 20%.However,the blue Pero-LEDs still lag due to the poor film quality and deficient device structure.Herein,we summarize the strategies for preparing blue-emitting perovskites and categorize them into two:compositional engineering and size controlling of the emitting units.The advantages and disadvantages of both strategies are discussed,and a perspective of preparing high-performance blue-emitting perovskite is proposed.The challenges and future directions of blue PeroLEDs fabrication are also discussed.

Pure blue and white light electroluminescence in a multilayer organic light-emitting diode using a new blue emitter

We characterized the 6,12-bis{[N-（3,4-dimethylphenyl）-N-（2,4,5-trimethylphenyl）]amino} chrysene （BmPAC）, which has been proven to be a blue fluorescent emission with high EL efficiency. The blue fluorescent device exhibits good performance with an external quantum efficiency of 5.8% and current efficiency of 8.9 cd/A, respectively. Using BmPAC, we also demonstrate a hybrid phosphorescence/fluorescence white organic light-emitting device （WOLED） with high efficiency of 36.3 cd/A. In order to improve the relative intensity of blue light, we plus a blue light-emitting layer （BEML） in front of the orange light emitting layer （YEML） to take advantage of the excess singlet excitons. With the new emitting layer of BEML/YEML/BEML, we demonstrate the fluorescence/phosphorescence/fluorescence WOLED exhibits good performance with a current efficiency of 47 cd/A and an enhanced relative intensity of blue light.

High color rendering index white organic light-emitting diode using levofloxacin as blue emitter

Levofloxacin （LOFX）, which is well-known as an antibiotic medicament, was shown to be useful as a 452-nm blue emitter for white organic light-emitting diodes （OLEDs）. In this paper, the fabricated white OLED contains a 452-nm blue emitting layer （thickness of 30 nm） with 1 wt% LOFX doped in CBP （4,4＇-bis（carbazol-9-yl）biphenyl） host and a 584-nm orange emitting layer （thickness of 10 nm） with 0.8 wt% DCJTB （4-（dicyanomethylene）-2-tert-butyl-6-（1,1,7,7- tetramethyljulolidin-4-yl-vinyl）-4H-pyran） doped in CBE which are separated by a 20-nm-thick buffer layer of TPBi （2,2＇,2＂-（benzene-1,3,5-triyl）-tri（1-phenyl-lH-benzimidazole）. A high color rendering index （CRI） of 84.5 and CIE chromaticity coordinates of （0.33, 0.32）, which is close to ideal white emission CIE （0.333, 0.333）, are obtained at a bias voltage of 14 V. Taking into account that LOFX is less expensive and the synthesis and purification technologies of LOFX are mature, these results indicate that blue fluorescence emitting LOFX is useful for applications to white OLEDs although the maximum current efficiency and luminance are not high. The present paper is expected to become a milestone to using medical drug materials for OLEDs.

Fine-tuning the thicknesses of organic layers to realize high-efficiency and long-lifetime blue organic light-emitting diodes

By using p-bis（p - N, N-diphenyl-aminostyryl）benzene doped 2-tert-butyl-9, 10-bis-β-naphthyl）-anthracene as an emitting layer, we fabricate a high-efficiency and long-lifetime blue organic light emitting diode with a maximum external quantum efficiency of 6.19% and a stable lifetime at a high initial current density of 0.0375 A/cm2. We demonstrate that the change in the thicknesses of organic layers affects the operating voltage and luminous efficiency greater than the lifetime. The lifetime being independent of thickness is beneficial in achieving high-quality full-colour display devices and white lighting sources with multi-emitters.

Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer

Blue InGaN light-emitting diodes （LEDs） with a conventional electron blocking layer （EBL）, a common n-A1GaN hole blocking layer （HBL）, and an n-A1GaN HBL with gradual A1 composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency （IQE）. The results indicate that LEDs with an n-AIGaN HBL with gradual AI composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conven tional p-A1GaN EBL or a common n-A1GaN HBL. Meanwhile, the efficiency droop is alleviated when an n-A1GaN HBL with gradual A1 composition is used.

Efficiency of Blue Organic Light-emitting Diodes Enhanced by Employing an Exciton Feedback Layer

We report that a novel exciton feedback effect is observed by introducing the bis（2-methyl-8-quinolinolato）（4- phenylphenolato）Muminum （BAlq） inserted between the emitting layer （EML） and the electron transporting layer in blue organic light emitting diodes. As an exciton feedback layer （EFL）, the BAlq does not act as a traditional hole blocking effect. The design of this kind of device structure can greatly reduce excitons＇ quenching due to accumulated space charge at the exciton formation interface. Meanwhile, the non-radiative energy transfer from EFL to the EML can also be utilized to enhance the excitons＇ formation, which is confirmed by the test of photolumimescent transient lifetime decay and electroluminescence enhancement of these devices. Accordingly, the optimal device presents the improved performances with the maximum current efficiency of 4.2 cd/A and the luminance of 24600cd/m2, which are about 1.45 times and 1.75 times higher than those of device A （control device） without the EFL, respectively. Simultaneously, the device shows an excellent color stability with a tiny offset of the CIE coordinates （△x = ±0.003, △y = ±0.004） and a relatively lower efficiency roll-off of 26.2% under the driving voltage varying from 3 V to 10 V.

A Method to Obtain Auger Recombination Coefficient in an InGaN-Based Blue Light-Emitting Diode

We propose and demonstrate to derive the Auger recombination coefficient by fitting efficiency-current and carrier lifetime-current curves simultaneously, which can minimize the uncertainty of fitting results. The obtained Auger recombination coefficient is 1.0x10(-31) cm(6)s(-1) in the present sample, which contributes slightly to efficiency droop effect.

Multiple-resonance thermally activated delayed emitters through multiple peripheral modulation to enable efficient blue OLEDs at high doping levels

Organic light-emitting diodes(OLEDs)based on multiple resonance-thermallyactivated delayedfluorescence(MR-TADF)have the advantages of high excitonutilization and excellent color purity.However,the large conjugated planarity of gen-eral MR-TADF emitters makes them easily aggregate in the form ofπ–πstacking,resulting in aggregation-caused quenching(ACQ)and the formation of excimers,which reduce exciton utilization efficiency and color purity.To address these issues,large shielding units can be incorporated to prevent interchromophore interactions,whereas the majority of reported molecules are limited to blue-green light emis-sions.This work proposes a strategy of incorporating steric hindrance groups atdifferent sites of the B/N core to suppress interactions between chromophore,con-tributing to blue MR-TADF emitters with high photo-luminance quantum yields(PLQYs≥95%)and narrow full width at half maximum(FWHM),and importantly,great suppression of the ACQ effect.Therefore,blue OLEDs achieve high externalquantum efficiencies up to 34.3%and high color purity with FWHM of about 27 nmand CIE around(0.12,0.15),even at a high doping concentration of 20 wt%.

Structure and luminescence of Ca_2Si_5N_8:Eu^(2+) phosphor for warm white light-emitting diodes

We have synthesized Ca2Si5N8：Eu^2＋ phosphor through a solid-state reaction and investigated its structural and luminescent properties. Our Rietveld refinement of the crystal structure of Ca1.9Eu0.1Si5N8 reveals that Eu atoms substituting for Ca atoms occupy two crystallographic positions. Between 10 K and 300 K, Ca2Si5N8：Eu^2＋ phosphor shows a broad red emission band centred at -1.97 eV-2.01 eV. The gravity centre of the excitation band is located at 3.0 eV 3.31 eV. The centroid shift of the 5d levels of Eu^2＋ is determined to be -1.17 eV, and the red-shift of the lowest absorption band to be - 0.54 eV due to the crystal field splitting. We have analysed the temperature dependence of PL by using a configuration coordinate model. The Huang-Rhys parameter S = 6.0, the phonon energy hv = 52 meV, and the Stokes shift △S = 0.57 eV are obtained. The emission intensity maximum occurring at -200 K can be explained by a trapping effect. Both photoluminescence （PL） emission intensity and decay time decrease with temperature increasing beyond 200 K due to the non-radiative process.

Enhancement in Light Extraction Efficiency of GaN-Based Light-Emitting Diodes Using Double Dielectric Surface Passivation

SiO2Al2O3 double dielectric stack layer was deposited on the surface of the GaN-based light-emitting diode (LED). The double dielectric stack layer enhances both the electrical characteristics and the optical output power of the LED because the first Al2O3 layer plays a role of effectively passivating the p-GaN surface and the second lower index SiO2 layer increases the critical angle of the light emitted from the LED surface. In addition, the effect of the Fresnel reflection is also responsible for the enhancement in output power of the double dielectric passivated LED. The leakage current of the LED passivated with Al2O3 layer was -3.46 × 10-11 A at -5 V, at least two and three orders lower in magnitude compared to that passivated with SiO2 layer (-7.14 × 10-9 A) and that of non-passivated LED (-1.9 × 10-8 A), respectively, which indicates that the Al2O3 layer is very effective in passivating the exposed GaN surface after dry etch and hence reduces nonradiative recombination as well as reabsorption of the emitted light near the etched surface.

Double superlattice structure for improving the performance of ultraviolet light-emitting diodes

The novel AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) with double superlattice structure(DSL) are proposed and demonstrated by numerical simulation and experimental verification. The DSL consists of 30-period Mg modulation-doped p-AlGaN/u-GaN superlattice(SL) and 4-period p-AlGaN/p-GaN SL electron blocking layer, which are used to replace the p-type GaN layer and electron blocking layer of conventional UV-LEDs, respectively. Due to the special effects and interfacial stress, the AlGaN/GaN short-period superlattice can reduce the acceptor ionization energy of the ptype regions, thereby increasing the hole concentration. Meanwhile, the multi-barrier electron blocking layers are effective in suppressing electron leakage and improving hole injection. Experimental results show that the enhancements of 22.5%and 37.9% in the output power and external quantum efficiency at 120 m A appear in the device with double superlattice structure.

The Transport Mechanisms of Reverse Leakage Current in Ultraviolet Light-Emitting Diodes

The transport mechanisms of the reverse leakage current in the UV light-emitting diodes （380nm） are investi- gated by the temperature-dependent current-voltage measurement first. Three possible transport mechanisms, the space-limited-charge conduction, the variable-range hopping and the Poole-Frenkel emission, are proposed to explain the transport process of the reverse leakage current above 295 K, respectively. With the in-depth investigation, the former two transport mechanisms are excluded. It is found that the experimental data agree well with the Poole Frenkel emission model. Furthermore, the activation energies of the traps that cause the reverse leakage current are extracted, which are 0.05eV, 0.09eV, and 0.11 eV, respectively. This indicates that at least three types of trap states are located below the bottom of the conduction band in the depletion region of the UV LEDs.

Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes

The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes （LEDs） is investigated. The LEDs with less Mg back-diffusion show blue shifts of longer wavelengths and larger wavelengths with the increasing current, which results from the Mg-dopant-related polarization screening. The LEDs show enhanced efficiency with the decreasing Mg back-diffusion in the lower current region. Light outputs follow the power law L α I^m, with smaller parameter m in the LEDs with less Mg back-diffusion, indicating a lower density of trap states. The trap-assisted tunneling current is also suppressed by reducing Mg- defect-related nonradiative centers in the active region. Furthermore, the forward current-voltage characteristics are improved.

Design of patterned sapphire substrates for GaN-based light-emitting diodes

A new method for patterned sapphire substrate （PSS） design is developed and proven to be reliable and cost-effective. As progress is made with LEDs＇ luminous efficiency, the pattern units of PSS become more complicated, and the effect of complicated geometrical features is almost impossible to study systematically by experiments only. By employing our new method, the influence of pattern parameters can be systematically studied, and various novel patterns are designed and optimized within a reasonable time span, with great improvement in LEDs＇ light extraction efficiency （LEE）. Clearly, PSS pattern design with such a method deserves particular attention. We foresee that GaN-based LEDs on these newly designed PSSs will achieve more progress in the coming years.

Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer

The characteristics of a blue light-emitting diode （LED） with a p-InA1GaN hole injection layer （HIL） is analyzed numerically. The simulation results indicate that the newly designed structure presents superior optical and electrical performance such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-InA1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.

Pterygium associated with light-emitting diode use:a case report

Background:Pterygium is a sun-related ocular surface disease secondary to ultraviolet(UV)radiation exposure.Outdoor occupational UV exposure is known to occur secondary to sun exposure.We present a unique case of pterygium associated with indoor occupational light-emitting diode(LED)exposure not previously described in the literature.Case Description:A mobile phone repairer presented with blurred vision and a superotemporal pterygium of his dominant left eye associated with a magnifying glass LED work lamp was diagnosed.This was excised routinely with conjunctival autografting to the defect.Histopathology confirmed benign pterygium and recovery was uncomplicated with resolution of blur.Conclusions:The development of pterygium in our patient may have arisen due to the LED lamp’s wavelengths possibly falling within the UV as well as the upper end of the visible light radiation spectrum.Given the increasing reliance on LED light sources in modern life,ocular conditions arising from exposure to these radiation sources may now need to be listed in the differential diagnoses of patients with pterygium.Appropriate UV protection counselling for these types of lights may also now need to be considered.

Review of blue perovskite light emitting diodes with optimization strategies for perovskite film and device structure

Perovskite light emitting diodes(PeLEDs)have attracted considerable research attention because of their external quantum efficiency(EQE)of>20%and have potential scope for further improvement.However,compared to red and green PeLEDs,blue PeLEDs have not been extensively investigated,which limits their commercial applications in the fields of luminance and full-color displays.In this review,blue-PeLED-related research is categorized by the composition of perovskite.The main challenges and corresponding optimization strategies for perovskite films are summarized.Next,the novel strategies for the design of device structures of blue PeLEDs are reviewed from the perspective of transport layers and interfacial layers.Accordingly,future directions for blue PeLEDs are discussed.This review can be a guideline for optimizing perovskite film and device structure of blue PeLEDs,thereby enhancing their development and application scope.

980 nm Near-Infrared Light-Emitting Diode Using All-Inorganic Perovskite Nanocrystals Doped with Ytterbium Ions

All-inorganic perovskite(CsPbX3)nanocrystals(NCs)have recently been widely investigated as versatile solution-processable light-emitting materials.Due to its wide-bandgap nature,the all-inorganic perovskite NC Light-Emitting Diode(LED)is limited to the visible region(400-700 nm).A particularly difficult challenge lies in the practical application of perovskite NCs in the infrared-spectrum region.In this work,a 980 nm NIR all-inorganic perovskite NC LED is demonstrated,which is based on an efficient energy transfer from wide-bandgap materials(CsPbCl3 NCs)to ytterbium ions(Yb3+)as an NIR emitter doped in perovskite NCs.The optimized CsPbCl3 NC with 15 mol%Yb3+doping concentration has the strongest 980 nm photoluminescence(PL)peak,with a PL quantum yield of 63%.An inverted perovskite NC LED is fabricated with the structure of ITO/PEDOT:PSS/poly-TPD/CsPbCl3:15 mol%Yb3+NCs/TPBi/LiF/Al.The LED has an External Quantum Efficiency(EQE)of 0.2%,a Full Width at Half Maximum(FWHM)of 47 nm,and a maximum luminescence of 182 cd/m?.The introduction of Yb3+doping in perovskite NCs makes it possible to expand its working wavelength to near-infrared band for next-generation light sources and shows potential applications for optoelectronic integration.

Developments and challenges ahead in blue perovskite light-emitting devices

Recently,perovskite light-emitting diodes(Pe LEDs)have developed rapidly in the green,red,and nearinfrared light emissions,owing to the unique optoelectronic characteristics of halide perovskites,such as high carrier mobility,narrow emission linewidths,high photoluminescence quantum yield,as well as bandgap tunability.However,the efficiency improvement in blue(especially deep-blue)Pe LEDs is still inferior to other analogs,which severely restricts the Pe LED applications.Here,we systematically summarize the substantial progress in the performance of blue Pe LEDs based on different blue perovskite candidates,and recent advances from three aspects(i.e.,the sky-blue,pure-blue,and deep-blue light emissions).Then,we point out several challenges existing in deep-blue Pe LEDs,such as the effect of Cl-ions incorporation,spectral instability,ion migration,and the difficulty of charge injection,and highlight the strategies to improve device efficiency,to motivate further research and development of blue Pe LEDs.