This work details the development of a broad-spectrum LNA (Low Noise Amplifier) circuit using a 65 nm CMOS technology. The design incorporates an inductive degeneracy circuit, employing a theoretical approach to enhan...This work details the development of a broad-spectrum LNA (Low Noise Amplifier) circuit using a 65 nm CMOS technology. The design incorporates an inductive degeneracy circuit, employing a theoretical approach to enhance gain, minimize noise levels, and uphold low power consumption. The progression includes a shift to a cascode structure to further refine LNA parameters. Ultimately, with a 1.8 V bias, the achieved performance showcases a gain-to-noise figure ratio of 16 dB/0.5 dB, an IIP3 linearity at 5.1 dBm, and a power consumption of 3 mW. This architecture is adept at operating across a wide frequency band spanning from 0.5 GHz to 6 GHz, rendering it applicable in diverse RF scenarios.展开更多
A 2.4GHz 0.18μm CMOS gain-switched single-end Low Noise Amplifier(LNA) and a passive mixer with no external balun for near-zero-IF(Intermediate Frequency)/RF(Radio Frequency) applications are described.The LNA,fabric...A 2.4GHz 0.18μm CMOS gain-switched single-end Low Noise Amplifier(LNA) and a passive mixer with no external balun for near-zero-IF(Intermediate Frequency)/RF(Radio Frequency) applications are described.The LNA,fabricated in the 0.18μm 1P6M CMOS technology,adopts a gain-switched technique to increase the linearity and enlarge the dynamic range.The mixer is an IQ-based passive topology.Measurements of the CMOS chip are performed on the FR-4 PCB and the input is matched to 50Ω.Combining LNA and mixer,the front-end measured performances in high gain state are:-15dB of S11,18.5dB of voltage gain,4.6dB of noise figure,-15dBm of ⅡP3,-85dBm to -10dBm dynamic range.The full circuit drains 6mA from a 1.8V supply.展开更多
The paper presents a fully integrated ultra-wide band(UWB)low noise amplifier(LNA)for 3-10 GHz applications.It employs self-biased resistive-feedback and current-reused technique to achieve wide input matching and low...The paper presents a fully integrated ultra-wide band(UWB)low noise amplifier(LNA)for 3-10 GHz applications.It employs self-biased resistive-feedback and current-reused technique to achieve wide input matching and low power characteristics.An improved biased architecture is adopted in the second stage to attain a better gain-compensation performance.The design is verified with TSMC standard 1 P6 M 0.18μm RF CMOS process.The measurement results show that the parasitic problem of the transistors at high frequencies is solved.A high and flat S21 of 9.7±1.5 dB and the lowest NF 3.5 dB are achieved in the desired frequency band.The power consumption is only 7.5 mA under 1.6 V supply.The proposed LNA achieves broadband flat gain,low noise,and high linearity performance simultaneously,allowing it to be used in 3-10 GHz UWB applications.展开更多
设计了一款采用可调谐有源电感(TAI)的可调增益的小面积超宽带低噪声放大器(LNA),输入级采用共基极结构,输出级采用射随器结构,分别实现了宽带输入和输出匹配;放大级采用带有反馈电阻的共射共基结构以取得宽的带宽,并采用TAI作负载,通...设计了一款采用可调谐有源电感(TAI)的可调增益的小面积超宽带低噪声放大器(LNA),输入级采用共基极结构,输出级采用射随器结构,分别实现了宽带输入和输出匹配;放大级采用带有反馈电阻的共射共基结构以取得宽的带宽,并采用TAI作负载,通过调节TAI的多个外部偏压使LNA的增益可调。结果表明,该LNA在2 GHz^9 GHz的频带内,通过组合调节有源电感调节端口的偏压可实现S21在16.5 d B^21.1 d B的连续可调;S_(11)小于-14.7 d B;S_(22)小于-19.3 d B;NF小于4.9 d B;芯片面积仅为0.049 mm^2。展开更多
文摘This work details the development of a broad-spectrum LNA (Low Noise Amplifier) circuit using a 65 nm CMOS technology. The design incorporates an inductive degeneracy circuit, employing a theoretical approach to enhance gain, minimize noise levels, and uphold low power consumption. The progression includes a shift to a cascode structure to further refine LNA parameters. Ultimately, with a 1.8 V bias, the achieved performance showcases a gain-to-noise figure ratio of 16 dB/0.5 dB, an IIP3 linearity at 5.1 dBm, and a power consumption of 3 mW. This architecture is adept at operating across a wide frequency band spanning from 0.5 GHz to 6 GHz, rendering it applicable in diverse RF scenarios.
文摘A 2.4GHz 0.18μm CMOS gain-switched single-end Low Noise Amplifier(LNA) and a passive mixer with no external balun for near-zero-IF(Intermediate Frequency)/RF(Radio Frequency) applications are described.The LNA,fabricated in the 0.18μm 1P6M CMOS technology,adopts a gain-switched technique to increase the linearity and enlarge the dynamic range.The mixer is an IQ-based passive topology.Measurements of the CMOS chip are performed on the FR-4 PCB and the input is matched to 50Ω.Combining LNA and mixer,the front-end measured performances in high gain state are:-15dB of S11,18.5dB of voltage gain,4.6dB of noise figure,-15dBm of ⅡP3,-85dBm to -10dBm dynamic range.The full circuit drains 6mA from a 1.8V supply.
基金Supported by the National Natural Science Foundation of China(No.61534003,61874024,61871116)
文摘The paper presents a fully integrated ultra-wide band(UWB)low noise amplifier(LNA)for 3-10 GHz applications.It employs self-biased resistive-feedback and current-reused technique to achieve wide input matching and low power characteristics.An improved biased architecture is adopted in the second stage to attain a better gain-compensation performance.The design is verified with TSMC standard 1 P6 M 0.18μm RF CMOS process.The measurement results show that the parasitic problem of the transistors at high frequencies is solved.A high and flat S21 of 9.7±1.5 dB and the lowest NF 3.5 dB are achieved in the desired frequency band.The power consumption is only 7.5 mA under 1.6 V supply.The proposed LNA achieves broadband flat gain,low noise,and high linearity performance simultaneously,allowing it to be used in 3-10 GHz UWB applications.
文摘设计了一款采用可调谐有源电感(TAI)的可调增益的小面积超宽带低噪声放大器(LNA),输入级采用共基极结构,输出级采用射随器结构,分别实现了宽带输入和输出匹配;放大级采用带有反馈电阻的共射共基结构以取得宽的带宽,并采用TAI作负载,通过调节TAI的多个外部偏压使LNA的增益可调。结果表明,该LNA在2 GHz^9 GHz的频带内,通过组合调节有源电感调节端口的偏压可实现S21在16.5 d B^21.1 d B的连续可调;S_(11)小于-14.7 d B;S_(22)小于-19.3 d B;NF小于4.9 d B;芯片面积仅为0.049 mm^2。
