采用Si C衬底0.25μm Al Ga N/Ga N高电子迁移率晶体管（HEMT）工艺,研制了一款X波段Ga N单片微波集成电路（MMIC）低噪声放大器（LNA）。放大器采用三级级联拓扑,第一级采用源极电感匹配,在确保良好的输入回波损耗的同时优化放大器噪...采用Si C衬底0.25μm Al Ga N/Ga N高电子迁移率晶体管（HEMT）工艺,研制了一款X波段Ga N单片微波集成电路（MMIC）低噪声放大器（LNA）。放大器采用三级级联拓扑,第一级采用源极电感匹配,在确保良好的输入回波损耗的同时优化放大器噪声系数;第三级采用电阻电容串联负反馈匹配,在尽量降低噪声系数的前提下,保证良好的增益平坦度、输出端口回波损耗以及输出功率。在片测试表明,在10 V漏级电压、-2 V栅极电压偏置下,放大器静态电流为60 m A,8~12 GHz内增益为22.5 d B,增益平坦度为±1.2 d B,输入输出回波损耗均优于-11 d B,噪声系数小于1.55 d B,1 d B增益压缩点输出功率大于11.9 d Bm,其芯片尺寸为2.2 mm×1.1 mm。装配测试表明,噪声系数典型值小于1.6 d B,可承受33 d Bm连续波输入功率。该X波段Ga N低噪声放大器与高功率放大器工艺兼容,可以实现多功能集成,具有广阔的工程应用前景。展开更多
This investigation explores a low-noise amplifier （LNA） with a coplanar waveguide （CPW） structure, in which a two-stage amplifier is associated with a cascade schematic circuit, implemented in 0.15μm GaAs pseudom...This investigation explores a low-noise amplifier （LNA） with a coplanar waveguide （CPW） structure, in which a two-stage amplifier is associated with a cascade schematic circuit, implemented in 0.15μm GaAs pseudomorphic high electron mobility transistor （pHEMT） technology in a Ka-band （26.540.0 GHz） microwave monolithic integrated circuit （MMIC）. The experimental results demonstrate that the proposed LNA has a peak gain of 12.53 dt3 at 30 GHz and a minimum noise figure of 3.3 dB at 29.5 GHz, when biased at a Vds of 2 V and a Vgs of-0.6 V with a drain current of 16 mA in the circuit. The results show that the millimeter-wave LNA with coplanar waveguide structure has a higher gain and wider bandwidth than a conventional circuit. Finally, the overall LNA characterization exhibits high gain and low noise, indicating that the LNA has a compact circuit and favorable RF characteristics. The strong RF character exhibited by the LNA circuit can be used in millimeter-wave circuit applications.展开更多
With rapid development communication system, high signal to noise ratio （SNR） system is required. In high frequency bandwidth, high loss, low Q inductors and high noise figure is a significant challenge with on-chip...With rapid development communication system, high signal to noise ratio （SNR） system is required. In high frequency bandwidth, high loss, low Q inductors and high noise figure is a significant challenge with on-chip monolithic microwave integrated circuits （MMICs）. To overcome this problem, high Q, low loss transmission line characteristics was analyzed. Compared with the same inductor value of the lumped component and the transmission line, it has a higher Q value and lower loss performance in high frequency, and a 2-stage common-source low noise amplifier （LNA） was presented, which employs source inductor feedback technology and high Q low loss transmission line matching network technique with over 17.6 dB small signal gain and 1.1 dB noise figure in 15 GHz-18 GHz. The LNA was fabricated by WIN semiconductors company 0.15 μm gallium arsenide （GaAs） P high electron mobility transistor （P-HEMT） process. The total Current is 15 mA, while the DC power consumption is only 45 mW.展开更多
文摘采用Si C衬底0.25μm Al Ga N/Ga N高电子迁移率晶体管（HEMT）工艺,研制了一款X波段Ga N单片微波集成电路（MMIC）低噪声放大器（LNA）。放大器采用三级级联拓扑,第一级采用源极电感匹配,在确保良好的输入回波损耗的同时优化放大器噪声系数;第三级采用电阻电容串联负反馈匹配,在尽量降低噪声系数的前提下,保证良好的增益平坦度、输出端口回波损耗以及输出功率。在片测试表明,在10 V漏级电压、-2 V栅极电压偏置下,放大器静态电流为60 m A,8~12 GHz内增益为22.5 d B,增益平坦度为±1.2 d B,输入输出回波损耗均优于-11 d B,噪声系数小于1.55 d B,1 d B增益压缩点输出功率大于11.9 d Bm,其芯片尺寸为2.2 mm×1.1 mm。装配测试表明,噪声系数典型值小于1.6 d B,可承受33 d Bm连续波输入功率。该X波段Ga N低噪声放大器与高功率放大器工艺兼容,可以实现多功能集成,具有广阔的工程应用前景。
文摘This investigation explores a low-noise amplifier （LNA） with a coplanar waveguide （CPW） structure, in which a two-stage amplifier is associated with a cascade schematic circuit, implemented in 0.15μm GaAs pseudomorphic high electron mobility transistor （pHEMT） technology in a Ka-band （26.540.0 GHz） microwave monolithic integrated circuit （MMIC）. The experimental results demonstrate that the proposed LNA has a peak gain of 12.53 dt3 at 30 GHz and a minimum noise figure of 3.3 dB at 29.5 GHz, when biased at a Vds of 2 V and a Vgs of-0.6 V with a drain current of 16 mA in the circuit. The results show that the millimeter-wave LNA with coplanar waveguide structure has a higher gain and wider bandwidth than a conventional circuit. Finally, the overall LNA characterization exhibits high gain and low noise, indicating that the LNA has a compact circuit and favorable RF characteristics. The strong RF character exhibited by the LNA circuit can be used in millimeter-wave circuit applications.
文摘With rapid development communication system, high signal to noise ratio （SNR） system is required. In high frequency bandwidth, high loss, low Q inductors and high noise figure is a significant challenge with on-chip monolithic microwave integrated circuits （MMICs）. To overcome this problem, high Q, low loss transmission line characteristics was analyzed. Compared with the same inductor value of the lumped component and the transmission line, it has a higher Q value and lower loss performance in high frequency, and a 2-stage common-source low noise amplifier （LNA） was presented, which employs source inductor feedback technology and high Q low loss transmission line matching network technique with over 17.6 dB small signal gain and 1.1 dB noise figure in 15 GHz-18 GHz. The LNA was fabricated by WIN semiconductors company 0.15 μm gallium arsenide （GaAs） P high electron mobility transistor （P-HEMT） process. The total Current is 15 mA, while the DC power consumption is only 45 mW.
