A fully integrated low noise amplifier( LNA) for WLAN 802. 11 ac is presented in this article.A cascode topology combining BJT and MOS transistor is used for better performance. An inductive source degeneration is cho...A fully integrated low noise amplifier( LNA) for WLAN 802. 11 ac is presented in this article.A cascode topology combining BJT and MOS transistor is used for better performance. An inductive source degeneration is chosen to get 50 Ohm impedance matching at the input. The noise contribution of common gate transistor is analyzed for the first time. The designed LNA is verified with IBM silicon-germanium(SiGe ) 0. 13μm BiCMOS process. The measured results show that the designed LNA has the gain of 13 dB and NF of 2. 8 dB at the center frequency of 5. 5 GHz. The input reflection S11 and output reflection S22 are equal to-19 dB and-11 dB respectively. The P-1 dB and IIP3 are-8. 9 dBm and 6. 6 dBm for the linearity performance respectively. The power consumption is only 1. 3 mW under the 1. 2 V supply. LNA achieves high gain,low noise,and high linearity performance,allowing it to be used for the WLAN 802. 11 ac applications.展开更多
In this paper, we present the design of an integrated low noise amplifier （LNA） for wireless local area network （WLAN） applications in the 5.15-5.825 GHz range using a SiGe BiCMOS technology. A novel method that c...In this paper, we present the design of an integrated low noise amplifier （LNA） for wireless local area network （WLAN） applications in the 5.15-5.825 GHz range using a SiGe BiCMOS technology. A novel method that can determine both the optimum bias point and the frequency point for achieving the minimum noise figure is put forward. The method can be used to determine the optimum impedance over a relevant wider operating frequency range. The results show that this kind of optimizing method is more suitable for the WLAN circuits design. The LNA gain is optimized and the noise figure （NF） is reduced. This method can also achieve the noise match and power match simultaneously. This proposal is applied on designing a LNA for IEEE 802.1 la WLAN. The LNA exhibits a power gain large than 16 dB from 5.15 to 5.825 GHz range. The noise figure is lower than 2 dB. The OIP3 is -8 dBm. Also the LNA is matched to 50 Ω input impedance with 6 mA DC current for differential design.展开更多
A high linearity 1.575 GHz SiGe：HBT low noise amplifier （LNA） for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS pro...A high linearity 1.575 GHz SiGe：HBT low noise amplifier （LNA） for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS process, A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1. I 1 dB, a power gain of 18 dB, an output 1 dB compression point of ＋7.8 dBm and an input third-order intercept point of ＋1.8 dBm. The chip occupies a 500 × 560μm^2 area and consumes 3.6 mA from a 2.85 V power supply.展开更多
Focusing on the linearity shortcoming on a bipolar low noise amplifier(LNA),a new 6 ~14GHz four stage SiGe HBT LNA is proposed.This amplifier adopts a method of gain allocation on multiple stages to avoid the limitati...Focusing on the linearity shortcoming on a bipolar low noise amplifier(LNA),a new 6 ~14GHz four stage SiGe HBT LNA is proposed.This amplifier adopts a method of gain allocation on multiple stages to avoid the limitation on linearity especially with the addition of negative gain on the third stage.To realize gain flatness,extra zero is introduced to compensate the gain roll-off formed by pole,and local shunt-shunt negative feedback is used to widen the bandwidth as well as optimize circuit' s noise.Simulated results have shown that in 6 ~14GHz,this circuit achieves noise figure(NF) less than 3dB,gain of 17.8dB(+0.2dB),input and output reflection parameters of less than- 10 dB,and the K factor is above 1.15.展开更多
该文设计和制作了一款单片集成硅锗异质结双极晶体管(SiGe HBT)低噪声放大器(LNA)。由于放大器采用复合型电阻负反馈结构,所以可灵活调整不同反馈电阻,同时获得合适的偏置、良好的端口匹配和低的噪声系数。基于0.35μm Si CMOS平面工艺...该文设计和制作了一款单片集成硅锗异质结双极晶体管(SiGe HBT)低噪声放大器(LNA)。由于放大器采用复合型电阻负反馈结构,所以可灵活调整不同反馈电阻,同时获得合适的偏置、良好的端口匹配和低的噪声系数。基于0.35μm Si CMOS平面工艺制定了放大器单芯片集成的工艺流程。为了进一步降低放大器的噪声系数,在制作放大器中SiGe器件时,采用钛硅合金(TiSi2)来减小晶体管基极电阻。由于没有使用占片面积大的螺旋电感,最终研制出的SiGe HBT LNA芯片面积仅为0.282mm2。测试结果表明,在工作频带0.2-1.2GHz内,LNA噪声系数低至2.5dB,增益高达26.7dB,输入输出端口反射系数分别小于-7.4dB和-10dB。展开更多
We present the design of a wide-band low-noise amplifier （LNA） implemented in 0.35μm SiGe BiCMOS technology for cable and terrestrial tuner applications. The LNA utilizes current injection to achieve high linearity...We present the design of a wide-band low-noise amplifier （LNA） implemented in 0.35μm SiGe BiCMOS technology for cable and terrestrial tuner applications. The LNA utilizes current injection to achieve high linearity. Without using inductors, the LNA achieves 0.1 ～ 1GHz wide bandwidth and 18. 8dB gain with less than 1.4dB of gain variation. The noise figure of the wideband LNA is 5dB, and its 1dB compression point is - 2dBm and IIP3 is 8dBm. The LNA dissipates 120mW of power with a 5V supply.展开更多
基金Supported by the National Natural Science Foundation of China(No.61534003)
文摘A fully integrated low noise amplifier( LNA) for WLAN 802. 11 ac is presented in this article.A cascode topology combining BJT and MOS transistor is used for better performance. An inductive source degeneration is chosen to get 50 Ohm impedance matching at the input. The noise contribution of common gate transistor is analyzed for the first time. The designed LNA is verified with IBM silicon-germanium(SiGe ) 0. 13μm BiCMOS process. The measured results show that the designed LNA has the gain of 13 dB and NF of 2. 8 dB at the center frequency of 5. 5 GHz. The input reflection S11 and output reflection S22 are equal to-19 dB and-11 dB respectively. The P-1 dB and IIP3 are-8. 9 dBm and 6. 6 dBm for the linearity performance respectively. The power consumption is only 1. 3 mW under the 1. 2 V supply. LNA achieves high gain,low noise,and high linearity performance,allowing it to be used for the WLAN 802. 11 ac applications.
文摘In this paper, we present the design of an integrated low noise amplifier （LNA） for wireless local area network （WLAN） applications in the 5.15-5.825 GHz range using a SiGe BiCMOS technology. A novel method that can determine both the optimum bias point and the frequency point for achieving the minimum noise figure is put forward. The method can be used to determine the optimum impedance over a relevant wider operating frequency range. The results show that this kind of optimizing method is more suitable for the WLAN circuits design. The LNA gain is optimized and the noise figure （NF） is reduced. This method can also achieve the noise match and power match simultaneously. This proposal is applied on designing a LNA for IEEE 802.1 la WLAN. The LNA exhibits a power gain large than 16 dB from 5.15 to 5.825 GHz range. The noise figure is lower than 2 dB. The OIP3 is -8 dBm. Also the LNA is matched to 50 Ω input impedance with 6 mA DC current for differential design.
文摘A high linearity 1.575 GHz SiGe：HBT low noise amplifier （LNA） for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS process, A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1. I 1 dB, a power gain of 18 dB, an output 1 dB compression point of ＋7.8 dBm and an input third-order intercept point of ＋1.8 dBm. The chip occupies a 500 × 560μm^2 area and consumes 3.6 mA from a 2.85 V power supply.
基金Supported by the National Natural Science Foundation of China(No.61076101,61204092,61306033)
文摘Focusing on the linearity shortcoming on a bipolar low noise amplifier(LNA),a new 6 ~14GHz four stage SiGe HBT LNA is proposed.This amplifier adopts a method of gain allocation on multiple stages to avoid the limitation on linearity especially with the addition of negative gain on the third stage.To realize gain flatness,extra zero is introduced to compensate the gain roll-off formed by pole,and local shunt-shunt negative feedback is used to widen the bandwidth as well as optimize circuit' s noise.Simulated results have shown that in 6 ~14GHz,this circuit achieves noise figure(NF) less than 3dB,gain of 17.8dB(+0.2dB),input and output reflection parameters of less than- 10 dB,and the K factor is above 1.15.
文摘We present the design of a wide-band low-noise amplifier （LNA） implemented in 0.35μm SiGe BiCMOS technology for cable and terrestrial tuner applications. The LNA utilizes current injection to achieve high linearity. Without using inductors, the LNA achieves 0.1 ～ 1GHz wide bandwidth and 18. 8dB gain with less than 1.4dB of gain variation. The noise figure of the wideband LNA is 5dB, and its 1dB compression point is - 2dBm and IIP3 is 8dBm. The LNA dissipates 120mW of power with a 5V supply.
