There is an urgent demand to explore new approaches of improving the electric breakdown strength of the ferroelectric thin-film capacitor without the degradation of the high dielectric constant.In this work,LaNiO_(3)/...There is an urgent demand to explore new approaches of improving the electric breakdown strength of the ferroelectric thin-film capacitor without the degradation of the high dielectric constant.In this work,LaNiO_(3)/Ba_(0.67)Sr_(0.33)TiO_(3)(LNO/BST) thin film and SrTiO_(3)(STO)/LNO/BST/SrTiO_(3)(STO) were prepared by using radio frequency(RF) magnetron sputtering technique and ultrathin STO insulator layers were inserted between the LNO/BST and metal electrodes(Au or Pt) to improve the electric breakdown strength and the leakage current of the LNO/BST thin film.X-ray diffraction(XRD) and scanning electron microscopy(SEM) investigations revealed that these multilayer thin films show compact,smooth and uniform morphologies.The leakage current density of STO/LNO/BST/STO thin film was decreased by one order of magnitude and breakdown strength of STO/LNO/BST/STO thin film was enhanced from 0.72 to 1.26 MV-cm-1compared with that of LNO/BST thin film.Moreover,the dielectric constant of the STO/LNO/BST/STO thin film keeps at the same level as that of LNO/BST thin film,and dielectric loss of the STO/LNO/BST/STO thin film was decreased slightly compared with that of LNO/BST thin film.展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.u1601208,51802204)。
文摘There is an urgent demand to explore new approaches of improving the electric breakdown strength of the ferroelectric thin-film capacitor without the degradation of the high dielectric constant.In this work,LaNiO_(3)/Ba_(0.67)Sr_(0.33)TiO_(3)(LNO/BST) thin film and SrTiO_(3)(STO)/LNO/BST/SrTiO_(3)(STO) were prepared by using radio frequency(RF) magnetron sputtering technique and ultrathin STO insulator layers were inserted between the LNO/BST and metal electrodes(Au or Pt) to improve the electric breakdown strength and the leakage current of the LNO/BST thin film.X-ray diffraction(XRD) and scanning electron microscopy(SEM) investigations revealed that these multilayer thin films show compact,smooth and uniform morphologies.The leakage current density of STO/LNO/BST/STO thin film was decreased by one order of magnitude and breakdown strength of STO/LNO/BST/STO thin film was enhanced from 0.72 to 1.26 MV-cm-1compared with that of LNO/BST thin film.Moreover,the dielectric constant of the STO/LNO/BST/STO thin film keeps at the same level as that of LNO/BST thin film,and dielectric loss of the STO/LNO/BST/STO thin film was decreased slightly compared with that of LNO/BST thin film.
