The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phono-plasmon coupled （LOPC） m...The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phono-plasmon coupled （LOPC） modes, and compared with those determined by Hall-effect measurement and that provided by the vendors. The transport properties of thick and thin 4H-SiC epilayers grown in both vertical and horizontal reactors were also studied. The free carrier density ranges between 2× 10^18 cm^-3 and 8× 10^18 cm^-3with a carrier mobility of 30-55 cm2/（V.s） for ntype 4H-SiC substrates and 1× 10^16 -3× 10^16 cm^-3 with mobility of 290-490 cm2/（V.s） for both thick and thin 4H-SiC epilayers grown in a horizontal reactor, while thick 4H-SiC epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1×10^16 cm^-3 with mobility of 380 cm2/（V.s）. It was shown that Raman spectroscopy is a potential technique for determining the transport properties of 4H-SiC wafers with the advantage of being able to probe very small volumes and also being non-destructive. This is especially useful for future mass production of 4H-SiC epi-wafers.展开更多
Annealing nanodiamonds(ND) at high temperatures up to 1700 ℃ is a common method to synthesize carbon onions. The transformation from NDs to carbon onions is particularly interesting because of carbon onions' pote...Annealing nanodiamonds(ND) at high temperatures up to 1700 ℃ is a common method to synthesize carbon onions. The transformation from NDs to carbon onions is particularly interesting because of carbon onions' potential in the field of tribology and their application in ultra-charge/discharge devices. In this paper, a novel surface-enhanced Raman scattering technique that involves coating the sample with nanoscopic gold particles is proposed to characterize the NDs after different annealing treatments. Conventional Raman and surfaceenhanced Raman spectra were obtained, and the changes of peak parameters as the function of annealing temperature were evaluated. It was found that the widths of the D and the G peaks decreased with increasing annealing temperature, reflecting an improved order in the sp^2-hybridized carbon during the transformation from NDs to carbon onions. After annealing at 1700 ℃, the sp^2?carbon was highly ordered, indicating desirable electrical conductivity and lubricity. With increasing annealing temperature, the D peak showed a blue shift of almost30 cm^(-1), while the G peak merely shifted by 5 cm^(-1). For annealing temperatures above 1100 ℃, an increase of intensity ratio ID/IGwas observed. Compared to the uncoated area, red shifts of 0.5-2 cm^(-1) and of 5-9 cm^(-1) for the G and D peaks, respectively, were detected for the gold-coated area, which was due to the coupling of the plasmons and the phonons of the samples.展开更多
We systematically investigate the optical properties of the InP1-xBix ternary alloys with 0≤x≤2.46%,by using high resolution polarized Raman scattering measurement.Both InP-like and InBi-like optical vibration modes...We systematically investigate the optical properties of the InP1-xBix ternary alloys with 0≤x≤2.46%,by using high resolution polarized Raman scattering measurement.Both InP-like and InBi-like optical vibration modes（LO） are identified in all the samples,suggesting that most of the Bi-atoms are incorporated into the lattice sites to substitute Patoms.And the intensity of the InBi-like Raman mode is positively proportional to the Bi-content.Linear red-shift of the InP-like longitudinal optical vibration mode is observed to be 1.1 cm-1/Bi%,while that of the InP-like optical vibration overtone（2LO） is nearly doubled.In addition,through comparing the（XX） and Z（XY） Raman spectra,longitudinaloptical-plasmon-coupled（LOPC） modes are identified in all the samples,and their intensities are found to be proportional to the electron concentrations.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 60876003)the Knowledge Innovation Project of Chinese Academy of Sciences (Grant Nos. Y072011000 and ISCAS2008T04)the Science and Technology Projects of the State Grid Corporation of China (ZL71-09-001)
文摘The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phono-plasmon coupled （LOPC） modes, and compared with those determined by Hall-effect measurement and that provided by the vendors. The transport properties of thick and thin 4H-SiC epilayers grown in both vertical and horizontal reactors were also studied. The free carrier density ranges between 2× 10^18 cm^-3 and 8× 10^18 cm^-3with a carrier mobility of 30-55 cm2/（V.s） for ntype 4H-SiC substrates and 1× 10^16 -3× 10^16 cm^-3 with mobility of 290-490 cm2/（V.s） for both thick and thin 4H-SiC epilayers grown in a horizontal reactor, while thick 4H-SiC epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1×10^16 cm^-3 with mobility of 380 cm2/（V.s）. It was shown that Raman spectroscopy is a potential technique for determining the transport properties of 4H-SiC wafers with the advantage of being able to probe very small volumes and also being non-destructive. This is especially useful for future mass production of 4H-SiC epi-wafers.
基金supported by National Natural Science Foundation of China (No. 51575389, 51761135106, 51511130074)National Key Research and Development Program of China (2016YFB1102203)State key laboratory of precision measuring technology and instruments (Pilt1705)
文摘Annealing nanodiamonds(ND) at high temperatures up to 1700 ℃ is a common method to synthesize carbon onions. The transformation from NDs to carbon onions is particularly interesting because of carbon onions' potential in the field of tribology and their application in ultra-charge/discharge devices. In this paper, a novel surface-enhanced Raman scattering technique that involves coating the sample with nanoscopic gold particles is proposed to characterize the NDs after different annealing treatments. Conventional Raman and surfaceenhanced Raman spectra were obtained, and the changes of peak parameters as the function of annealing temperature were evaluated. It was found that the widths of the D and the G peaks decreased with increasing annealing temperature, reflecting an improved order in the sp^2-hybridized carbon during the transformation from NDs to carbon onions. After annealing at 1700 ℃, the sp^2?carbon was highly ordered, indicating desirable electrical conductivity and lubricity. With increasing annealing temperature, the D peak showed a blue shift of almost30 cm^(-1), while the G peak merely shifted by 5 cm^(-1). For annealing temperatures above 1100 ℃, an increase of intensity ratio ID/IGwas observed. Compared to the uncoated area, red shifts of 0.5-2 cm^(-1) and of 5-9 cm^(-1) for the G and D peaks, respectively, were detected for the gold-coated area, which was due to the coupling of the plasmons and the phonons of the samples.
基金Project supported by the National Basic Research Program of China(Grant No.2014CB643903)the National Natural Science Foundation of China(Grant Nos.61225021,11474272.and 11174272)
文摘We systematically investigate the optical properties of the InP1-xBix ternary alloys with 0≤x≤2.46%,by using high resolution polarized Raman scattering measurement.Both InP-like and InBi-like optical vibration modes（LO） are identified in all the samples,suggesting that most of the Bi-atoms are incorporated into the lattice sites to substitute Patoms.And the intensity of the InBi-like Raman mode is positively proportional to the Bi-content.Linear red-shift of the InP-like longitudinal optical vibration mode is observed to be 1.1 cm-1/Bi%,while that of the InP-like optical vibration overtone（2LO） is nearly doubled.In addition,through comparing the（XX） and Z（XY） Raman spectra,longitudinaloptical-plasmon-coupled（LOPC） modes are identified in all the samples,and their intensities are found to be proportional to the electron concentrations.
