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4H-SiC同质外延拉曼散射光谱 被引量:2
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作者 王守国 柴泾睿 王登 《西北大学学报(自然科学版)》 CAS CSCD 北大核心 2015年第2期229-232,共4页
在4H-SiC(0001)衬底上,使用CVD法生长不同掺杂浓度的外延层。将不同掺杂浓度的4H-SiC外延层,用拉曼散射光谱进行了研究。使用Matlab拟合了LOPC模的线型,并从理论上计算出载流子浓度,载流子浓度的理论计算值与SIMS测量的结果符合良好。... 在4H-SiC(0001)衬底上,使用CVD法生长不同掺杂浓度的外延层。将不同掺杂浓度的4H-SiC外延层,用拉曼散射光谱进行了研究。使用Matlab拟合了LOPC模的线型,并从理论上计算出载流子浓度,载流子浓度的理论计算值与SIMS测量的结果符合良好。随着掺杂浓度的变大,载流子浓度变大,LOPC峰发生蓝移,频移变大,散射强度变小,峰宽变宽。分析认为,LOPC峰发生蓝移主要和晶格振动有关,浓度越大,使得原子之间和晶胞之间的相互作用越强,致使出现蓝移现象。随着掺杂浓度的增大,声子增加,进而散射概率增加,散射概率降低了声子寿命,声子寿命和峰宽成反比,随着掺杂浓度增大,峰宽变宽。随着掺杂浓度的增大,散射强度越来越小。 展开更多
关键词 4H-SIC 拉曼光谱 掺杂浓度 lopc
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Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 被引量:2
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作者 孙国胜 刘兴昉 +8 位作者 吴海雷 闫果果 董林 郑柳 赵万顺 王雷 曾一平 李锡光 王占国 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第3期185-190,共6页
The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phono-plasmon coupled (LOPC) m... The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phono-plasmon coupled (LOPC) modes, and compared with those determined by Hall-effect measurement and that provided by the vendors. The transport properties of thick and thin 4H-SiC epilayers grown in both vertical and horizontal reactors were also studied. The free carrier density ranges between 2× 10^18 cm^-3 and 8× 10^18 cm^-3with a carrier mobility of 30-55 cm2/(V.s) for ntype 4H-SiC substrates and 1× 10^16 -3× 10^16 cm^-3 with mobility of 290-490 cm2/(V.s) for both thick and thin 4H-SiC epilayers grown in a horizontal reactor, while thick 4H-SiC epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1×10^16 cm^-3 with mobility of 380 cm2/(V.s). It was shown that Raman spectroscopy is a potential technique for determining the transport properties of 4H-SiC wafers with the advantage of being able to probe very small volumes and also being non-destructive. This is especially useful for future mass production of 4H-SiC epi-wafers. 展开更多
关键词 4H-SIC Raman scattering lopc modes transport properties
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Bismuth-content-dependent polarized Raman spectrum of InPBi alloy 被引量:1
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作者 魏冠男 谭青海 +8 位作者 戴兴 冯琦 骆文刚 盛宇 王凯 潘文武 张立瑶 王庶民 王开友 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第6期53-58,共6页
We systematically investigate the optical properties of the InP1-xBix ternary alloys with 0≤x≤2.46%,by using high resolution polarized Raman scattering measurement.Both InP-like and InBi-like optical vibration modes... We systematically investigate the optical properties of the InP1-xBix ternary alloys with 0≤x≤2.46%,by using high resolution polarized Raman scattering measurement.Both InP-like and InBi-like optical vibration modes(LO) are identified in all the samples,suggesting that most of the Bi-atoms are incorporated into the lattice sites to substitute Patoms.And the intensity of the InBi-like Raman mode is positively proportional to the Bi-content.Linear red-shift of the InP-like longitudinal optical vibration mode is observed to be 1.1 cm-1/Bi%,while that of the InP-like optical vibration overtone(2LO) is nearly doubled.In addition,through comparing the(XX) and Z(XY) Raman spectra,longitudinaloptical-plasmon-coupled(LOPC) modes are identified in all the samples,and their intensities are found to be proportional to the electron concentrations. 展开更多
关键词 InPBi Raman spectra RED-SHIFT lopc modes
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Surface-enhanced Raman scattering on nanodiamond-derived carbon onions 被引量:1
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作者 Ying Song Zongwei Xu +3 位作者 Andreas Rosenkranz Mathias Rommel Changkun Shi Fengzhou Fang 《Nanotechnology and Precision Engineering》 EI CAS CSCD 2019年第1期35-39,共5页
Annealing nanodiamonds(ND) at high temperatures up to 1700 ℃ is a common method to synthesize carbon onions. The transformation from NDs to carbon onions is particularly interesting because of carbon onions' pote... Annealing nanodiamonds(ND) at high temperatures up to 1700 ℃ is a common method to synthesize carbon onions. The transformation from NDs to carbon onions is particularly interesting because of carbon onions' potential in the field of tribology and their application in ultra-charge/discharge devices. In this paper, a novel surface-enhanced Raman scattering technique that involves coating the sample with nanoscopic gold particles is proposed to characterize the NDs after different annealing treatments. Conventional Raman and surfaceenhanced Raman spectra were obtained, and the changes of peak parameters as the function of annealing temperature were evaluated. It was found that the widths of the D and the G peaks decreased with increasing annealing temperature, reflecting an improved order in the sp^2-hybridized carbon during the transformation from NDs to carbon onions. After annealing at 1700 ℃, the sp^2?carbon was highly ordered, indicating desirable electrical conductivity and lubricity. With increasing annealing temperature, the D peak showed a blue shift of almost30 cm^(-1), while the G peak merely shifted by 5 cm^(-1). For annealing temperatures above 1100 ℃, an increase of intensity ratio ID/IGwas observed. Compared to the uncoated area, red shifts of 0.5-2 cm^(-1) and of 5-9 cm^(-1) for the G and D peaks, respectively, were detected for the gold-coated area, which was due to the coupling of the plasmons and the phonons of the samples. 展开更多
关键词 NANODIAMONDS CARBON onions Surface-enhanced RAMAN SCATTERING lopc mode
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