Plasma-assisted chemical vapor deposition (PCVD) was applied for amorphous TiOx deposition on Pyrex-glass substrate at low temperature below 90°C to control orientation of anatase-TiO2 layer by low pressure chemi...Plasma-assisted chemical vapor deposition (PCVD) was applied for amorphous TiOx deposition on Pyrex-glass substrate at low temperature below 90°C to control orientation of anatase-TiO2 layer by low pressure chemical vapor deposition (LPCVD) using TTIP-single precursor. Preferentially -oriented anatase-TiO2 layer was successfully deposited with the orientation ratio as high as 68% on the initial layer of the thickness around 70 nm. Contact angle water was quickly decreased by UV-irradiation on the highly -oriented TiO2 layer comparing with the layer directly deposited on glass, whereas surface roughness on the former was significantly reduced in comparison to that on the latter. Methyleneblue (MB) aqueous solution with the concentration of 2 mmol/L was used to evaluate photocatalytic property on the layer. Rate constant of MB-decomposition via first order kinetics increased with the orientation ratio above 60% was resulted in 2.3 × 10-1?min-1 for the layer with -orientation ratio of 68%, whereas the constant was 2.8 × 10-3 min-1 for the layer directly deposited on glass.展开更多
Atomic H generated by a plasma NH3 source at 400 ℃ was demonstrated to passivate dehydrogenated Si3N4/SiO2/Si stacks effectively by bonding with defects in the Si3N4 film and at the Si-SiO2 interface. A subsequent an...Atomic H generated by a plasma NH3 source at 400 ℃ was demonstrated to passivate dehydrogenated Si3N4/SiO2/Si stacks effectively by bonding with defects in the Si3N4 film and at the Si-SiO2 interface. A subsequent anneal in N2 after atomic H reintroduction was demonstrated to further improve passivation of the Si-SiO2 interface. Isothermal and isochronal anneals in N2 were carried out in order to determine the optimized annealing conditions.展开更多
Nb and F co-doped anatase TiO2 layers were deposited by low pressure chemical vapor deposition (LPCVD) at pressure of 3 mtorr using titanium-tetra-iso-propoxide (TTIP), O2 and NbF5 as precursor, oxidant and dopant res...Nb and F co-doped anatase TiO2 layers were deposited by low pressure chemical vapor deposition (LPCVD) at pressure of 3 mtorr using titanium-tetra-iso-propoxide (TTIP), O2 and NbF5 as precursor, oxidant and dopant respectively. Resistivity beyond 100 Ωcm for undoped layer was decreased with increasing supply of the dopant and dependent on the supply ratio of O2 to TTIP and decreased to 0.2 Ωcm by the optimization. X-ray fluorescent spectroscopy showed Nb-content in the layer was decreased with the O2-supply ratio. X-ray photo-spectroscopy indicated that F substituted O-site in TiO2 by O2-supply but carbon-contamination and F missing substitution in the O-site were significantly increased by excess O2-supply. Further, it was suggested that the substituted F played an important role to reduce resistivity without significant contribution of O-vacancies. XRD spectra showed F missing substitution in the O-site degraded the crystallinity.展开更多
Low pressure chemical vapor deposition (LPCVD) of anatase TiO2?as a reduction gas was demonstrated at pres- sure of 3 mtorr in comparison to that using TTIP and O2 with study for the property of the layers. Dissociati...Low pressure chemical vapor deposition (LPCVD) of anatase TiO2?as a reduction gas was demonstrated at pres- sure of 3 mtorr in comparison to that using TTIP and O2 with study for the property of the layers. Dissociation energy of TTIP in H2 was higher than that in O2 but resistivity of the layer deposited in H2 was significantly decreased to 0.2 Ω cm in contrast to the high resistivity beyond 100 Ω cm of the layer deposited in O2. UV-Vis optical transmission spectra showed absorption around 2.2 eV was increased in the layer deposited by TTIP + H2 in addition to decrease of forbidden energy gap due to increase of Urbach tail. Resistivity at low temperature below 100 K indicating the layer deposited in H2-ambient was degenerated by the high electron density but the resistivity was decreased with temperature above 100 K with the activation energy about 100 meV. A possible electronic conduction model based on kernel, grain boundary and surface trap to clarify the temperature dependent resistivity suggesting resistivity of the layer was limited by depletion region in the grain-boundary extended from the surface and the kernel with significantly low resistivity in 10-3 Ω cm order was formed in the layer.展开更多
Titanium-oxide layer was grown on glass substrate by plasma-assisted chemical vapor deposition (PCVD) using oxygen gas plasma excited by radio-frequency power at 13.56 MHz in the pressure as low as 3mtorr at relativel...Titanium-oxide layer was grown on glass substrate by plasma-assisted chemical vapor deposition (PCVD) using oxygen gas plasma excited by radio-frequency power at 13.56 MHz in the pressure as low as 3mtorr at relatively low temperature below 400oC, and studied on the crystallographic properties with the hydrophilic behavior comparing to the layer deposited by low-pressure chemical vapor deposition (LPCVD). Raman spectra indicated anatase-phase TiO2 layer without amorphous-phase could be formed above 340oC by simultaneous supply of plasma-cracked and non-cracked titanium-tetra-iso-propoxide (TTIP) used as preliminary precursor. Surface Scanning Electron Microscope images indicated the PCVD-layer consists of distinct nanometer-size plate-like columnar grains, in contrast to rugged micrometer-size grains in the LPCVD-layer. Extremely small water contact angle about 5o in dark and the quick conversion to super-hydrophilicity by UV-irradiation with a light-power density as low as 50 W/cm2 were observed on the PCVD- layer grown at 380oC, while the large initial contact angle was above 40o and the response for the UV-irradiation was gradual on the LPCVD-layer.展开更多
Poly-crystalline anatase TiO2 layer fabricated by LPCVD using titanium-tetra-iso-propoxide and NbF5 in H2-ambient was treated in conc.-HCl solution after thin layer of IIIb-group metal was deposited on the TiO2 layer....Poly-crystalline anatase TiO2 layer fabricated by LPCVD using titanium-tetra-iso-propoxide and NbF5 in H2-ambient was treated in conc.-HCl solution after thin layer of IIIb-group metal was deposited on the TiO2 layer. Resistivity of the as-deposited layer about 1 × 10-1 Ω·cm was drastically reduced to 3 × 10-3 Ω·cm by the wet-treatment using indium. Temperature dependence of the resistivity increased with temperature above 100 K for the wet-treated layer was quite different from that decreased above 100 K for the as-deposited layer, whereas the resistivity was saturated at lower temperatures. The resistivity at room-temperature was decreased with the thickness before the wet-treatment but independent on the thickness above 100 nm for the wet-treated layer. Indium was more effective for the resistivity reduction than gallium but aluminum was not useful for the treatment. As the results that the wet-treatment using indium was examined for the TiO2 layers deposited by various conditions, the optimum deposition condition to reduce the resistivity of the layer after the wet-treatment was clearly different from that for the as-deposited layer.展开更多
文摘Plasma-assisted chemical vapor deposition (PCVD) was applied for amorphous TiOx deposition on Pyrex-glass substrate at low temperature below 90°C to control orientation of anatase-TiO2 layer by low pressure chemical vapor deposition (LPCVD) using TTIP-single precursor. Preferentially -oriented anatase-TiO2 layer was successfully deposited with the orientation ratio as high as 68% on the initial layer of the thickness around 70 nm. Contact angle water was quickly decreased by UV-irradiation on the highly -oriented TiO2 layer comparing with the layer directly deposited on glass, whereas surface roughness on the former was significantly reduced in comparison to that on the latter. Methyleneblue (MB) aqueous solution with the concentration of 2 mmol/L was used to evaluate photocatalytic property on the layer. Rate constant of MB-decomposition via first order kinetics increased with the orientation ratio above 60% was resulted in 2.3 × 10-1?min-1 for the layer with -orientation ratio of 68%, whereas the constant was 2.8 × 10-3 min-1 for the layer directly deposited on glass.
基金The project was financially supported by the Australian Research Council
文摘Atomic H generated by a plasma NH3 source at 400 ℃ was demonstrated to passivate dehydrogenated Si3N4/SiO2/Si stacks effectively by bonding with defects in the Si3N4 film and at the Si-SiO2 interface. A subsequent anneal in N2 after atomic H reintroduction was demonstrated to further improve passivation of the Si-SiO2 interface. Isothermal and isochronal anneals in N2 were carried out in order to determine the optimized annealing conditions.
文摘Nb and F co-doped anatase TiO2 layers were deposited by low pressure chemical vapor deposition (LPCVD) at pressure of 3 mtorr using titanium-tetra-iso-propoxide (TTIP), O2 and NbF5 as precursor, oxidant and dopant respectively. Resistivity beyond 100 Ωcm for undoped layer was decreased with increasing supply of the dopant and dependent on the supply ratio of O2 to TTIP and decreased to 0.2 Ωcm by the optimization. X-ray fluorescent spectroscopy showed Nb-content in the layer was decreased with the O2-supply ratio. X-ray photo-spectroscopy indicated that F substituted O-site in TiO2 by O2-supply but carbon-contamination and F missing substitution in the O-site were significantly increased by excess O2-supply. Further, it was suggested that the substituted F played an important role to reduce resistivity without significant contribution of O-vacancies. XRD spectra showed F missing substitution in the O-site degraded the crystallinity.
文摘Low pressure chemical vapor deposition (LPCVD) of anatase TiO2?as a reduction gas was demonstrated at pres- sure of 3 mtorr in comparison to that using TTIP and O2 with study for the property of the layers. Dissociation energy of TTIP in H2 was higher than that in O2 but resistivity of the layer deposited in H2 was significantly decreased to 0.2 Ω cm in contrast to the high resistivity beyond 100 Ω cm of the layer deposited in O2. UV-Vis optical transmission spectra showed absorption around 2.2 eV was increased in the layer deposited by TTIP + H2 in addition to decrease of forbidden energy gap due to increase of Urbach tail. Resistivity at low temperature below 100 K indicating the layer deposited in H2-ambient was degenerated by the high electron density but the resistivity was decreased with temperature above 100 K with the activation energy about 100 meV. A possible electronic conduction model based on kernel, grain boundary and surface trap to clarify the temperature dependent resistivity suggesting resistivity of the layer was limited by depletion region in the grain-boundary extended from the surface and the kernel with significantly low resistivity in 10-3 Ω cm order was formed in the layer.
文摘Titanium-oxide layer was grown on glass substrate by plasma-assisted chemical vapor deposition (PCVD) using oxygen gas plasma excited by radio-frequency power at 13.56 MHz in the pressure as low as 3mtorr at relatively low temperature below 400oC, and studied on the crystallographic properties with the hydrophilic behavior comparing to the layer deposited by low-pressure chemical vapor deposition (LPCVD). Raman spectra indicated anatase-phase TiO2 layer without amorphous-phase could be formed above 340oC by simultaneous supply of plasma-cracked and non-cracked titanium-tetra-iso-propoxide (TTIP) used as preliminary precursor. Surface Scanning Electron Microscope images indicated the PCVD-layer consists of distinct nanometer-size plate-like columnar grains, in contrast to rugged micrometer-size grains in the LPCVD-layer. Extremely small water contact angle about 5o in dark and the quick conversion to super-hydrophilicity by UV-irradiation with a light-power density as low as 50 W/cm2 were observed on the PCVD- layer grown at 380oC, while the large initial contact angle was above 40o and the response for the UV-irradiation was gradual on the LPCVD-layer.
文摘Poly-crystalline anatase TiO2 layer fabricated by LPCVD using titanium-tetra-iso-propoxide and NbF5 in H2-ambient was treated in conc.-HCl solution after thin layer of IIIb-group metal was deposited on the TiO2 layer. Resistivity of the as-deposited layer about 1 × 10-1 Ω·cm was drastically reduced to 3 × 10-3 Ω·cm by the wet-treatment using indium. Temperature dependence of the resistivity increased with temperature above 100 K for the wet-treated layer was quite different from that decreased above 100 K for the as-deposited layer, whereas the resistivity was saturated at lower temperatures. The resistivity at room-temperature was decreased with the thickness before the wet-treatment but independent on the thickness above 100 nm for the wet-treated layer. Indium was more effective for the resistivity reduction than gallium but aluminum was not useful for the treatment. As the results that the wet-treatment using indium was examined for the TiO2 layers deposited by various conditions, the optimum deposition condition to reduce the resistivity of the layer after the wet-treatment was clearly different from that for the as-deposited layer.
