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不同宽长比的柔性LTPS TFT的电应力可靠性
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作者 张之壤 朱慧 +3 位作者 刘行 张轶群 徐朝 郑文轩 《半导体技术》 CAS 北大核心 2024年第6期589-595,共7页
为了研究不同宽长比的柔性低温多晶硅薄膜晶体管(LTPS TFT)的电应力可靠性,测试了器件的I-V特性,以表征器件在强电场直流应力下由于自热效应和热载流子效应带来的电学性能退化。通过瞬态电流法表征了器件在强电场直流应力下的时间常数谱... 为了研究不同宽长比的柔性低温多晶硅薄膜晶体管(LTPS TFT)的电应力可靠性,测试了器件的I-V特性,以表征器件在强电场直流应力下由于自热效应和热载流子效应带来的电学性能退化。通过瞬态电流法表征了器件在强电场直流应力下的时间常数谱,并对其产生的新陷阱进行定位,分析了产生陷阱的内在机理。结果表明,在相同的强电场直流应力下宽长比为3/2.5的器件,其电学参数变化最大,自热效应以及热载流子效应带来的影响也最大。自热效应导致器件性能退化的主要原因是较大的栅源电压导致Si/SiO2界面处和栅氧化层中的陷阱增多,而热载流子效应导致器件性能退化的主要原因则是由于较大的漏源电压使得漏极晶界陷阱态密度急剧升高。 展开更多
关键词 柔性低温多晶硅薄膜晶体管(ltps tft) 自热效应 热载流子效应 瞬态电流 强电场直流应力
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Poly-Si TFTs integrated gate driver circuit with charge-sharing structure 被引量:1
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作者 Meng Chen Jiefeng Lei +2 位作者 Shengxiang Huang Congwei Liao Lianwen Deng 《Journal of Semiconductors》 EI CAS CSCD 2017年第5期88-93,共6页
A p-type low-temperature poly-Si thin film transistors(LTPS TFTs) integrated gate driver using 2 nonoverlapped clocks is proposed.This gate driver features charge-sharing structure to turn off buffer TFT and suppres... A p-type low-temperature poly-Si thin film transistors(LTPS TFTs) integrated gate driver using 2 nonoverlapped clocks is proposed.This gate driver features charge-sharing structure to turn off buffer TFT and suppresses voltage feed-through effects.It is analyzed that the conventional gate driver suffers from waveform distortions due to voltage uncertainty of internal nodes for the initial period.The proposed charge-sharing structure also helps to suppress the unexpected pulses during the initialization phases.The proposed gate driver shows a simple circuit,as only 6 TFTs and 1 capacitor are used for single-stage,and the buffer TFT is used for both pulling-down and pulling-up of output electrode.Feasibility of the proposed gate driver is proven through detailed analyses.Investigations show that voltage bootrapping can be maintained once the bootrapping capacitance is larger than0.8 pF,and pulse of gate driver outputs can be reduced to 5μs.The proposed gate driver can still function properly with positive V(TH)shift within 0.4 V and negative V(TH) shift within-1.2 V and it is robust and promising for high-resolution display. 展开更多
关键词 ltps tft charge-sharing integrated gate driver
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