Ag/La0.5 Mg0.5 MnO3/p+-Si resistance switching device for nonvolatile memory application was fabricated by sol-gel method. The thickness effects of La0.5 Mg0.5 MnO3（LMMO） films on current-voltage（I-V） characterist...Ag/La0.5 Mg0.5 MnO3/p+-Si resistance switching device for nonvolatile memory application was fabricated by sol-gel method. The thickness effects of La0.5 Mg0.5 MnO3（LMMO） films on current-voltage（I-V） characteristics, resistance switching behaviour and endurance characteristics of Ag/LMMO/p+-Si device were investigated. The same crystallisation and phase structure were confirmed in the LMMO films with increased film thickness. The Ag/LMMO/p+-Si device exhibits the typical bipolar resistive switching behaviour. As the LMMO thickness and the stable repetition switching cycle numbers increase, VSet, and VReset of the device will increase, but the RHRS/RLRS will decrease. The Ag/LMMO/p+-Si device with 165 nm thick LMMO films exhibit the best performance, in which the RHRS/RLRS exceeds 104 for 1 000 switching cycles, and its degradation is invisible for more than 106 s.展开更多
Synthesis, structure and magnetic properties of Ru doped perovskite structured manganite La0.5Sr0.5MnO3 were investigated experimentally. A hydrothermal method was used for the preparation of the samples. A high-tempe...Synthesis, structure and magnetic properties of Ru doped perovskite structured manganite La0.5Sr0.5MnO3 were investigated experimentally. A hydrothermal method was used for the preparation of the samples. A high-temperature annealing process was also employed to make a comparison. A slightly enhancement of the unit cell volume was observed with the increase of Ru concentration. Scanning electron microscopy shows that the materials are made up of cube-shaped particles with dimension of several micrometers. Importantly, it is found that both the Curie temperature TC and saturation moment can be reduced by Ru doping. The value of coercive field is not affected by the introduction of Ru.展开更多
基金Funded by the National Natural Science Foundation of China(No.51262003)the Guangxi Natural Science Foundation(No.2015GXNSFAA139253)
文摘Ag/La0.5 Mg0.5 MnO3/p+-Si resistance switching device for nonvolatile memory application was fabricated by sol-gel method. The thickness effects of La0.5 Mg0.5 MnO3（LMMO） films on current-voltage（I-V） characteristics, resistance switching behaviour and endurance characteristics of Ag/LMMO/p+-Si device were investigated. The same crystallisation and phase structure were confirmed in the LMMO films with increased film thickness. The Ag/LMMO/p+-Si device exhibits the typical bipolar resistive switching behaviour. As the LMMO thickness and the stable repetition switching cycle numbers increase, VSet, and VReset of the device will increase, but the RHRS/RLRS will decrease. The Ag/LMMO/p+-Si device with 165 nm thick LMMO films exhibit the best performance, in which the RHRS/RLRS exceeds 104 for 1 000 switching cycles, and its degradation is invisible for more than 106 s.
基金supported by the Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2015187)the National Natural Science Foundation of China (Grant No. 11204338).
文摘Synthesis, structure and magnetic properties of Ru doped perovskite structured manganite La0.5Sr0.5MnO3 were investigated experimentally. A hydrothermal method was used for the preparation of the samples. A high-temperature annealing process was also employed to make a comparison. A slightly enhancement of the unit cell volume was observed with the increase of Ru concentration. Scanning electron microscopy shows that the materials are made up of cube-shaped particles with dimension of several micrometers. Importantly, it is found that both the Curie temperature TC and saturation moment can be reduced by Ru doping. The value of coercive field is not affected by the introduction of Ru.
