The magneto-optical Kerr effect of La0.7Ca0.3MnO3 at low temperature in far-infrared terahertz and mid-infrared region from 0.2 to 1.2 eV is theoretically investigated by means of the Drude model. The complex con-duct...The magneto-optical Kerr effect of La0.7Ca0.3MnO3 at low temperature in far-infrared terahertz and mid-infrared region from 0.2 to 1.2 eV is theoretically investigated by means of the Drude model. The complex con-ductivity and dielectric constants are obtained. The spectra of Kerr rotation with different external magnetic fields B and temperatures T are numerically analyzed. A large Kerr rotation in mid-infrared region could be explained as the incoherent hopping motion of polarons.展开更多
Infrared absorption spectra of La0.67-xPrxCa0.33MnO3 （x= 0, 0.18 and 0.36） are experimentally studied in the temperature range 20 -300K. Absorption peak splitting corresponding to the stretching oscillation of the M...Infrared absorption spectra of La0.67-xPrxCa0.33MnO3 （x= 0, 0.18 and 0.36） are experimentally studied in the temperature range 20 -300K. Absorption peak splitting corresponding to the stretching oscillation of the Mn-O bond, together with a shift of peak position, is observed below the Curie temperature. These features weaken and even disappear as the samples are warmed up to the Curie temperature, which indicates that this anomaly may be a result of phase separation in the compounds.展开更多
The magnetron sputtered La0.7Sr0.3MnO3 films were implanted with different doses (5 ′ 1015 ions×cm?2 and 5 ′ 1016 ions×cm-2) of Al ions at different negative pulsed voltages (30 kV and 50 kV) by plasma bas...The magnetron sputtered La0.7Sr0.3MnO3 films were implanted with different doses (5 ′ 1015 ions×cm?2 and 5 ′ 1016 ions×cm-2) of Al ions at different negative pulsed voltages (30 kV and 50 kV) by plasma based ion implantation and then annealed at 973 K for 1 h in air. The microstructure, surface morphologies, surface roughness, metal-insulator transition and room temperature emittance properties of the post-implantation annealed films were investigated and compared with those of the La0.7Sr0.3MnO3 film annealed at 973 K for 1 h in air. The results indicate that the post- implantation annealed films show single perovskite phase and obvious (100) preferred orientation growth. The Mn-O bond length, surface roughness and metal-insulator transition temperature (TMI) of the films can be effectively adjusted by changing implantation voltage or implantation dose of Al ions. However, the change of implantation parameters just has a small effect on room temperature emittance of the films. Compared with the annealed film, the post-implantation annealed films have shorter Mn-O bond length and lower room temperature emittance. The TMI of the films implanted at low voltage is lower than that of the annealed film, which mainly results from the degradation of oxidization during annealing process and the part displacement of Mn3+-O2+- Mn4+ double exchange channels by Al3+-O2?-Mn4+. The post-implanted annealed film implanted at 50 kV/5 ′ 1016 ions×cm-2 has a higher TMI than the annealed film, which is 247 K. The increase of TMI of the film implanted with high dose of Al ions at high voltage can be attributed to the improvement of microstructure.展开更多
The La0.67Sr0.33MnO3 +δ/Pr0.7Ca0.3MnO3 +δ/La0.67Sr0.33MnO3 +δ(LPL) trilayered films on (100)LaA-1O3 substrates are prepared by using direct current (DC) magnetron sputtering method. The results obtained by means of...The La0.67Sr0.33MnO3 +δ/Pr0.7Ca0.3MnO3 +δ/La0.67Sr0.33MnO3 +δ(LPL) trilayered films on (100)LaA-1O3 substrates are prepared by using direct current (DC) magnetron sputtering method. The results obtained by means of X-ray powder diffractometer show that all films are the high quality epitaxial films. The results gained by SQUID magnetometer indicate that there is a magnetic coupling in the LPL trilayered films. The resistivities of LSMO, PC-MO and LPL films are measured using standard four-probe method and analyzed log ρ/T curve. From the results it is concluded that the middle-layered PCMO which is ferromagnetic may play a role of intra-magnetic field, which weakens the paramagnetism of LSMO film, lowers ρmax and enlarges Tp which is the transition temperature from metal to insulator, just as the applied magnetic field does. And the middle-layered PCMO may induce the change of the density of states in the LSMO' s gap. The two reasons above make the resistivity and Tp of the samples in zero field change with the thickness of PCMO layers.展开更多
基金Supported by the Major Project of Knowledge Innovation Project of Chinese Academy of Science (No. KJCX2SW-N02)
文摘The magneto-optical Kerr effect of La0.7Ca0.3MnO3 at low temperature in far-infrared terahertz and mid-infrared region from 0.2 to 1.2 eV is theoretically investigated by means of the Drude model. The complex con-ductivity and dielectric constants are obtained. The spectra of Kerr rotation with different external magnetic fields B and temperatures T are numerically analyzed. A large Kerr rotation in mid-infrared region could be explained as the incoherent hopping motion of polarons.
基金Supported by the National Natural Science Foundation of China under Grant Nos G50225209 and G50271023, the Key Foundation of Education Ministry of China under Grant G02017 and the Natural Science Foundation of Hebei Province under Grant No G503031.
文摘Infrared absorption spectra of La0.67-xPrxCa0.33MnO3 （x= 0, 0.18 and 0.36） are experimentally studied in the temperature range 20 -300K. Absorption peak splitting corresponding to the stretching oscillation of the Mn-O bond, together with a shift of peak position, is observed below the Curie temperature. These features weaken and even disappear as the samples are warmed up to the Curie temperature, which indicates that this anomaly may be a result of phase separation in the compounds.
文摘The magnetron sputtered La0.7Sr0.3MnO3 films were implanted with different doses (5 ′ 1015 ions×cm?2 and 5 ′ 1016 ions×cm-2) of Al ions at different negative pulsed voltages (30 kV and 50 kV) by plasma based ion implantation and then annealed at 973 K for 1 h in air. The microstructure, surface morphologies, surface roughness, metal-insulator transition and room temperature emittance properties of the post-implantation annealed films were investigated and compared with those of the La0.7Sr0.3MnO3 film annealed at 973 K for 1 h in air. The results indicate that the post- implantation annealed films show single perovskite phase and obvious (100) preferred orientation growth. The Mn-O bond length, surface roughness and metal-insulator transition temperature (TMI) of the films can be effectively adjusted by changing implantation voltage or implantation dose of Al ions. However, the change of implantation parameters just has a small effect on room temperature emittance of the films. Compared with the annealed film, the post-implantation annealed films have shorter Mn-O bond length and lower room temperature emittance. The TMI of the films implanted at low voltage is lower than that of the annealed film, which mainly results from the degradation of oxidization during annealing process and the part displacement of Mn3+-O2+- Mn4+ double exchange channels by Al3+-O2?-Mn4+. The post-implanted annealed film implanted at 50 kV/5 ′ 1016 ions×cm-2 has a higher TMI than the annealed film, which is 247 K. The increase of TMI of the film implanted with high dose of Al ions at high voltage can be attributed to the improvement of microstructure.
基金Project supported by the Chinese Academy of Sciences the Foundation of State ScienceTechnology Commission of China
文摘The La0.67Sr0.33MnO3 +δ/Pr0.7Ca0.3MnO3 +δ/La0.67Sr0.33MnO3 +δ(LPL) trilayered films on (100)LaA-1O3 substrates are prepared by using direct current (DC) magnetron sputtering method. The results obtained by means of X-ray powder diffractometer show that all films are the high quality epitaxial films. The results gained by SQUID magnetometer indicate that there is a magnetic coupling in the LPL trilayered films. The resistivities of LSMO, PC-MO and LPL films are measured using standard four-probe method and analyzed log ρ/T curve. From the results it is concluded that the middle-layered PCMO which is ferromagnetic may play a role of intra-magnetic field, which weakens the paramagnetism of LSMO film, lowers ρmax and enlarges Tp which is the transition temperature from metal to insulator, just as the applied magnetic field does. And the middle-layered PCMO may induce the change of the density of states in the LSMO' s gap. The two reasons above make the resistivity and Tp of the samples in zero field change with the thickness of PCMO layers.
