In this study,a simple template consisted of Y2O3 and La2Zr2O7 (LZO) layers was fabricated on rolling assisted biaxially textured Ni-5at%W substrates for YBa2Cu3O7-δ (YBCO) coated conductors.A thin sputtered Y2O3 lay...In this study,a simple template consisted of Y2O3 and La2Zr2O7 (LZO) layers was fabricated on rolling assisted biaxially textured Ni-5at%W substrates for YBa2Cu3O7-δ (YBCO) coated conductors.A thin sputtered Y2O3 layer (～20 nm) was introduced as a seed layer in order to induce epitaxial growth of metal organic deposited LZO layer.The effects of Y2O3 layer,annealing temperature and dwelling time on the phase and texture of the LZO films were systematically investigated.X-ray diffraction exhibited that the LZO films were purely c-axis-oriented with full width at half maximum value of out-of-plane and in-plane less than 4° and 6° respectively.Atomic force microscope analysis indicated the surface of such films was smooth,dense and crack-free.1.2μm-thick YBCO films were prepared directly on this 2-layer template with a critical current density of 0.58 MA/cm2 at 77 K and self field and Ic value of 70 A/cm-width,indicating a combination of LZO/Y2O3 is a promising buffer architecture for low cost production of high performance coated conductors.展开更多
The metal organic deposition (MOD) method was used for the epitaxial growth of the CeO2/La2Zr2O7(LZO)/LZO seed layer structure on a cube-textured Ni5W substrate layer by layer. The material phase and the macro-orienta...The metal organic deposition (MOD) method was used for the epitaxial growth of the CeO2/La2Zr2O7(LZO)/LZO seed layer structure on a cube-textured Ni5W substrate layer by layer. The material phase and the macro-orientations were analyzed by XRD. The surface morphology and the blocking performance of the buffer layer were investigated by SEM and AES. The grain orientation and the crystallographic growth mode of the CeO2 layer were first characterized by electron backscattering diffraction (EBSD). The uniformly distributed islanded LZO seed layer optimized both the in-plan and the out-plan orientation of the CeO2/LZO buffer layers, and the CeO2/LZO buffer layers with a thickness of 175 nm acted as an efficient Ni,W barrier. The EBSD analysis indicated that the crystallographic orientation of each layer can be obtained at various accelerating voltages for the multilayer sample, the percentage of {001}<110> rotated cube texture of CeO2 layer reaching 97.4% at the accelerating voltage of 15 kV, thus showing epitaxial deposition with a high texture.展开更多
基金National Science Foundation of China (51002024)"863" High-Tech Project (2007AA032201)
文摘In this study,a simple template consisted of Y2O3 and La2Zr2O7 (LZO) layers was fabricated on rolling assisted biaxially textured Ni-5at%W substrates for YBa2Cu3O7-δ (YBCO) coated conductors.A thin sputtered Y2O3 layer (～20 nm) was introduced as a seed layer in order to induce epitaxial growth of metal organic deposited LZO layer.The effects of Y2O3 layer,annealing temperature and dwelling time on the phase and texture of the LZO films were systematically investigated.X-ray diffraction exhibited that the LZO films were purely c-axis-oriented with full width at half maximum value of out-of-plane and in-plane less than 4° and 6° respectively.Atomic force microscope analysis indicated the surface of such films was smooth,dense and crack-free.1.2μm-thick YBCO films were prepared directly on this 2-layer template with a critical current density of 0.58 MA/cm2 at 77 K and self field and Ic value of 70 A/cm-width,indicating a combination of LZO/Y2O3 is a promising buffer architecture for low cost production of high performance coated conductors.
基金National Basic Research Program "973" of China (2006CB601005)National Natural Science Foundation of China (50771003)National High Technology Research and Development Program of "863" (2009AA032401)
文摘The metal organic deposition (MOD) method was used for the epitaxial growth of the CeO2/La2Zr2O7(LZO)/LZO seed layer structure on a cube-textured Ni5W substrate layer by layer. The material phase and the macro-orientations were analyzed by XRD. The surface morphology and the blocking performance of the buffer layer were investigated by SEM and AES. The grain orientation and the crystallographic growth mode of the CeO2 layer were first characterized by electron backscattering diffraction (EBSD). The uniformly distributed islanded LZO seed layer optimized both the in-plan and the out-plan orientation of the CeO2/LZO buffer layers, and the CeO2/LZO buffer layers with a thickness of 175 nm acted as an efficient Ni,W barrier. The EBSD analysis indicated that the crystallographic orientation of each layer can be obtained at various accelerating voltages for the multilayer sample, the percentage of {001}<110> rotated cube texture of CeO2 layer reaching 97.4% at the accelerating voltage of 15 kV, thus showing epitaxial deposition with a high texture.
