Based on the first-principles method, the structural stability and the contribution of point defects such as O, Sr or Ti vacancies on two-dimensional electron gas of n- and p-type LaAlO3/SrTiO3 interfaces are investig...Based on the first-principles method, the structural stability and the contribution of point defects such as O, Sr or Ti vacancies on two-dimensional electron gas of n- and p-type LaAlO3/SrTiO3 interfaces are investigated. The results show that O vacancies at p-type interfaces have much lower formation energies, and Sr or Ti vacancies at n-type interfaces are more stable than the ones at p-type interfaces under O-rich conditions. The calculated densities of states indicate that O vacancies act as donors and give a significant compensation to hole carriers, resulting in insulating behavior at p-type interfaces. In contrast, Sr or Ti vacancies tend to trap electrons and behave as acceptors. Sr vacancies are the most stable defects at high oxygen partial pressures, and the Sr vacancies rather than Ti vacancies are responsible for the insulator-metal transition of n-type interface. The calculated results can be helpful to understand the tuned electronic properties of LaAlO3 /SrTiO3 heterointerfaces.展开更多
Recently, the quasi-two-dimensional electron gas （q2DEG） confined at the interface between LaAlO3 and SrTiO3 has attracted significant attention. In this paper, we briefly review experimental methods that have been ...Recently, the quasi-two-dimensional electron gas （q2DEG） confined at the interface between LaAlO3 and SrTiO3 has attracted significant attention. In this paper, we briefly review experimental methods that have been used to tune the carrier density and mobility of this q2DEG. These methods can be classified into two categories： growth-related tuning （i.e. substrate, growth temperature, oxygen pressure, post-annealing, LaAlO3 thickness, stoichiometry, and capping layers） and post-growth tuning （i.e. electrostatic field gating, conductive atomic force microscopy and surface adsorbates）. Taken together, these methods enable the broad tuning of the electronic properties of this interface.展开更多
Strontium titanate(SrTiO3),which is a crucial perovskite oxide with a direct energy band gap of 3.2 eV,holds great promise for ultraviolet(UV)photodetection.However,the response performance of the conventional SrTiO3-...Strontium titanate(SrTiO3),which is a crucial perovskite oxide with a direct energy band gap of 3.2 eV,holds great promise for ultraviolet(UV)photodetection.However,the response performance of the conventional SrTiO3-based photodetectors is limited by the large relative dielectric constant of the material,which reduces the internal electric field for electron-hole pair separation to form a current collected by electrodes.Recently,graphene/semiconductor hybrid photodetectors by van-der-Waals heteroepitaxy method demonstrate ultrahigh sensitivity,which is benefit from the interface junction architecture and then prolonged lifetime of photoexcited carriers.Here,a graphene/SrTiO3 interface-based photodetector is demonstrated with an ultrahigh responsivity of 1.2×106 A/W at the wavelength of 325 nm and∼2.4×104 A/W at 261 nm.The corresponding response time is in the order of∼ms.Compared with graphene/GaN interface junctionbased hybrid photodetectors,∼2 orders of magnitude improvement of the ultrahigh responsivity originates from a gain mechanism which correlates with the large work function difference induced long photo-carrier lifetime as well as the low background carrier density.The performance of high responsivity and fast response speed facilitates SrTiO3 material for further efforts seeking practical applications.展开更多
The two-dimensional electron gas at SrTiO3-based heterointerfaces has received a great deal of attention in recent years owing to their potential for the exploration of emergent physics and the next generation of elec...The two-dimensional electron gas at SrTiO3-based heterointerfaces has received a great deal of attention in recent years owing to their potential for the exploration of emergent physics and the next generation of electronics. One of the most fascinating aspects in this system is that the light, as a powerful external perturbation, can modify its transport properties. Recent studies have reported that SrTiO3-based heterointerfaces exhibit the persistent photoconductivity and can be tuned by the surface and interface engineering. These researches not only reveal the intrinsic physical mechanisms in the photoresponsive process, but also highlight the ability to be used as a tool for novel all-oxide optical devices. This review mainly contraposes the studies of photoresponse at SrTiO3-based heterointerfaces.展开更多
The first-principles calculations are employed to investigate the stability, magnetic, and electrical properties of the oxide heterostructure of LaAIO3/SrTiO3 （110）. By comparing their interface energies, it is obta...The first-principles calculations are employed to investigate the stability, magnetic, and electrical properties of the oxide heterostructure of LaAIO3/SrTiO3 （110）. By comparing their interface energies, it is obtained that the buckled interface is more stable than the abrupt interface. This result is consistent with experimental observation. At the interface of LaAIO3/SrTiO3 （110） heterostructure, the Ti-O octahedron distortions cause the Ti tzg orbitals to split into the two- fold degenerate dxz/dyz and nondegenerate dxy orbitals. The former has higher energy than the latter. The partly filled two-fold degenerate t2g orbitals are the origin of two-dimensional electron gas, which is confined at the interface. Lattice mismatch between LaA103 and SrTiO3 leads to ferroelectric-like lattice distortions at the interface, and this is the origin of spin-splitting of Ti 3d electrons. Hence the magnetism appears at the interface of LaAIO3/SrTiO3 （110）.展开更多
Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electro...Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas （2DEG） at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm2·V-1·s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.展开更多
Oxide heterointerface is a platform to create unprecedented two-dimensional electron gas, superconductivity and ferromagnetism, arising from a polar discontinuity at the interface. In particular, the ability to tune t...Oxide heterointerface is a platform to create unprecedented two-dimensional electron gas, superconductivity and ferromagnetism, arising from a polar discontinuity at the interface. In particular, the ability to tune these intriguing effects paves a way to elucidate their fundamental physics and to develop novel electronic/magnetic devices. In this work, we report for the first time that a ferroelectric polarization screening at SrTiO_(3)/PbTiO_(3) interface is able to drive an electronic construction of Ti atom, giving rise to room-temperature ferromagnetism. Surprisingly, such ferromagnetism can be switched to antiferromagnetism by applying a magnetic field, which is reversible. A coupling of itinerant electrons with local moments at interfacial Ti3d orbital was proposed to explain the magnetism. The localization of the itinerant electrons under a magnetic field is responsible for the suppression of magnetism. These findings provide new insights into interfacial magnetism and their control by magnetic field relevant interfacial electrons promising for device applications.展开更多
基金Supported by the National Natural Science Foundation of China Under Grant No 61205180the Natural Science Foundation of Hebei Province under Grant No E2014201188+1 种基金the Hebei University Science Funds for Distinguished Young Scholars under Grant No 2012JQ01the Program for Top Young Talents of Hebei Province
文摘Based on the first-principles method, the structural stability and the contribution of point defects such as O, Sr or Ti vacancies on two-dimensional electron gas of n- and p-type LaAlO3/SrTiO3 interfaces are investigated. The results show that O vacancies at p-type interfaces have much lower formation energies, and Sr or Ti vacancies at n-type interfaces are more stable than the ones at p-type interfaces under O-rich conditions. The calculated densities of states indicate that O vacancies act as donors and give a significant compensation to hole carriers, resulting in insulating behavior at p-type interfaces. In contrast, Sr or Ti vacancies tend to trap electrons and behave as acceptors. Sr vacancies are the most stable defects at high oxygen partial pressures, and the Sr vacancies rather than Ti vacancies are responsible for the insulator-metal transition of n-type interface. The calculated results can be helpful to understand the tuned electronic properties of LaAlO3 /SrTiO3 heterointerfaces.
基金Project supported by the Department of Energy,Office of Basic Energy Sciences(Grant No.DE-AC02-76SF00515)
文摘Recently, the quasi-two-dimensional electron gas （q2DEG） confined at the interface between LaAlO3 and SrTiO3 has attracted significant attention. In this paper, we briefly review experimental methods that have been used to tune the carrier density and mobility of this q2DEG. These methods can be classified into two categories： growth-related tuning （i.e. substrate, growth temperature, oxygen pressure, post-annealing, LaAlO3 thickness, stoichiometry, and capping layers） and post-growth tuning （i.e. electrostatic field gating, conductive atomic force microscopy and surface adsorbates）. Taken together, these methods enable the broad tuning of the electronic properties of this interface.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFF0104801 and 2018YFB0406601)the National Natural Science Foundation of China(Grant Nos.61804012 and 11721404).
文摘Strontium titanate(SrTiO3),which is a crucial perovskite oxide with a direct energy band gap of 3.2 eV,holds great promise for ultraviolet(UV)photodetection.However,the response performance of the conventional SrTiO3-based photodetectors is limited by the large relative dielectric constant of the material,which reduces the internal electric field for electron-hole pair separation to form a current collected by electrodes.Recently,graphene/semiconductor hybrid photodetectors by van-der-Waals heteroepitaxy method demonstrate ultrahigh sensitivity,which is benefit from the interface junction architecture and then prolonged lifetime of photoexcited carriers.Here,a graphene/SrTiO3 interface-based photodetector is demonstrated with an ultrahigh responsivity of 1.2×106 A/W at the wavelength of 325 nm and∼2.4×104 A/W at 261 nm.The corresponding response time is in the order of∼ms.Compared with graphene/GaN interface junctionbased hybrid photodetectors,∼2 orders of magnitude improvement of the ultrahigh responsivity originates from a gain mechanism which correlates with the large work function difference induced long photo-carrier lifetime as well as the low background carrier density.The performance of high responsivity and fast response speed facilitates SrTiO3 material for further efforts seeking practical applications.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51572222 and 11604265)Innovation Foundation for Doctor Dissertation of Northwestern Polytechnical University,China(Grant No.CX201836)
文摘The two-dimensional electron gas at SrTiO3-based heterointerfaces has received a great deal of attention in recent years owing to their potential for the exploration of emergent physics and the next generation of electronics. One of the most fascinating aspects in this system is that the light, as a powerful external perturbation, can modify its transport properties. Recent studies have reported that SrTiO3-based heterointerfaces exhibit the persistent photoconductivity and can be tuned by the surface and interface engineering. These researches not only reveal the intrinsic physical mechanisms in the photoresponsive process, but also highlight the ability to be used as a tool for novel all-oxide optical devices. This review mainly contraposes the studies of photoresponse at SrTiO3-based heterointerfaces.
基金Project supported by the National Basis Research Program of China(Grant No.2013CB632506)the National Natural Science Foundation of China(Grant Nos.11374186,51231007,and 51202132)the Independent Innovation Foundation of Shandong University,China(Grant No.2012TS027)
文摘The first-principles calculations are employed to investigate the stability, magnetic, and electrical properties of the oxide heterostructure of LaAIO3/SrTiO3 （110）. By comparing their interface energies, it is obtained that the buckled interface is more stable than the abrupt interface. This result is consistent with experimental observation. At the interface of LaAIO3/SrTiO3 （110） heterostructure, the Ti-O octahedron distortions cause the Ti tzg orbitals to split into the two- fold degenerate dxz/dyz and nondegenerate dxy orbitals. The former has higher energy than the latter. The partly filled two-fold degenerate t2g orbitals are the origin of two-dimensional electron gas, which is confined at the interface. Lattice mismatch between LaA103 and SrTiO3 leads to ferroelectric-like lattice distortions at the interface, and this is the origin of spin-splitting of Ti 3d electrons. Hence the magnetism appears at the interface of LaAIO3/SrTiO3 （110）.
文摘Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas （2DEG） at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm2·V-1·s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.
基金supported by the National Natural Science Foundation of China (U1909212, U1809217, and 11474249)supported by the U.S. Department of Energy, Office of Basic Energy Science, Division of Materials Sciences and Engineering (Ames Laboratory is operated for the U.S. Department of Energy by Iowa State University under Contract No. DE-AC02-07CH11358)。
文摘Oxide heterointerface is a platform to create unprecedented two-dimensional electron gas, superconductivity and ferromagnetism, arising from a polar discontinuity at the interface. In particular, the ability to tune these intriguing effects paves a way to elucidate their fundamental physics and to develop novel electronic/magnetic devices. In this work, we report for the first time that a ferroelectric polarization screening at SrTiO_(3)/PbTiO_(3) interface is able to drive an electronic construction of Ti atom, giving rise to room-temperature ferromagnetism. Surprisingly, such ferromagnetism can be switched to antiferromagnetism by applying a magnetic field, which is reversible. A coupling of itinerant electrons with local moments at interfacial Ti3d orbital was proposed to explain the magnetism. The localization of the itinerant electrons under a magnetic field is responsible for the suppression of magnetism. These findings provide new insights into interfacial magnetism and their control by magnetic field relevant interfacial electrons promising for device applications.
