In an attempt of being used as buffer layers and electrodes for the textured BaTiO3 （BTO） ferroelectric thin films, highly （100）-oriented LaNiO3 （LNO） thin films of different thicknesses were deposited directly ...In an attempt of being used as buffer layers and electrodes for the textured BaTiO3 （BTO） ferroelectric thin films, highly （100）-oriented LaNiO3 （LNO） thin films of different thicknesses were deposited directly on Si （100） substrate with radio-frequency （RF） magnetron sputtering method. It is observed that the substrate temperatures and the film thicknesses bring main influences on the microstructures and orientation of the thin film. The effects of the thicknesses and substrate temperatures on the orientation of the films were studied on the LNO films of different thicknesses. The highly （100）-oriented LNO thin films were obtained at the substrate temperature of 600℃. The existence of epitaxially grown BTO films indicates that the oriented LNO thin films obtained in this work could be used as a buffer layer for epitaxial growth.展开更多
The Bi4Zr0.5Ti2.5O12 (BZT) thin films were fabricated on the LaNiO3 bottom electrode using sol-gel method. The structure and morphology of the films were character-ized using X-ray diffraction, AFM and SEM. The result...The Bi4Zr0.5Ti2.5O12 (BZT) thin films were fabricated on the LaNiO3 bottom electrode using sol-gel method. The structure and morphology of the films were character-ized using X-ray diffraction, AFM and SEM. The results show that the films have a perovskite phase and dense microstructure. The 2Pr and 2Vc of the Pt/BZT/LaNiO3 capacitor are 28.2 μC/cm2 and 14.7 V respectively at an applied voltage of 25 V. After the switching of 1×1010 cycles, the Pr value decreases to 87% of its pre-fatigue val-ues. The dielectric constant (ε) and the dissipation factor (tanδ) of the BZT thin films are about 204 and 0.029 at 1 kHz, respectively. The films show good insulating behavior according to the test of leakage current. The clockwise C-V hysteresis curve observed shows that the Pt/BZT/LaNiO3 structure has a memory effect be-cause of the BZT film’s ferroelectric polarization.展开更多
文摘In an attempt of being used as buffer layers and electrodes for the textured BaTiO3 （BTO） ferroelectric thin films, highly （100）-oriented LaNiO3 （LNO） thin films of different thicknesses were deposited directly on Si （100） substrate with radio-frequency （RF） magnetron sputtering method. It is observed that the substrate temperatures and the film thicknesses bring main influences on the microstructures and orientation of the thin film. The effects of the thicknesses and substrate temperatures on the orientation of the films were studied on the LNO films of different thicknesses. The highly （100）-oriented LNO thin films were obtained at the substrate temperature of 600℃. The existence of epitaxially grown BTO films indicates that the oriented LNO thin films obtained in this work could be used as a buffer layer for epitaxial growth.
基金Supported by Natural Science Foundation of Hubei Province (Grant No. 2004ABA082)
文摘The Bi4Zr0.5Ti2.5O12 (BZT) thin films were fabricated on the LaNiO3 bottom electrode using sol-gel method. The structure and morphology of the films were character-ized using X-ray diffraction, AFM and SEM. The results show that the films have a perovskite phase and dense microstructure. The 2Pr and 2Vc of the Pt/BZT/LaNiO3 capacitor are 28.2 μC/cm2 and 14.7 V respectively at an applied voltage of 25 V. After the switching of 1×1010 cycles, the Pr value decreases to 87% of its pre-fatigue val-ues. The dielectric constant (ε) and the dissipation factor (tanδ) of the BZT thin films are about 204 and 0.029 at 1 kHz, respectively. The films show good insulating behavior according to the test of leakage current. The clockwise C-V hysteresis curve observed shows that the Pt/BZT/LaNiO3 structure has a memory effect be-cause of the BZT film’s ferroelectric polarization.
