A lateral photovoltaic effect （LPE） is discovered in an LaTiO3＋8 film epitaxially grown on a （100） SrTiO3 substrate. Under the illumination of a continuous 808 nm laser beam that is focused on the LaTiO3＋δ film...A lateral photovoltaic effect （LPE） is discovered in an LaTiO3＋8 film epitaxially grown on a （100） SrTiO3 substrate. Under the illumination of a continuous 808 nm laser beam that is focused on the LaTiO3＋δ film through the SrTiO3 substrate, the open-circuit photovoltage depends linearly on the illuminated position. The sensitivity of the LPE can be modified by the bias current. The LaTiO3＋δ film shows a stable photoelectric property under the high pressure, up to 9 MPa. These results indicate that the LaTiO3＋δ films can give rise to a potentially photoelectronic device for near-infrared position-sensitive detection in high-pressure environments.展开更多
基金supported by the National 973 Program of China (No. 2014CB744302)the Specially Founded Program on National Key Scientific Instruments and Equipment Development (No. 2012YQ140005)
文摘A lateral photovoltaic effect （LPE） is discovered in an LaTiO3＋8 film epitaxially grown on a （100） SrTiO3 substrate. Under the illumination of a continuous 808 nm laser beam that is focused on the LaTiO3＋δ film through the SrTiO3 substrate, the open-circuit photovoltage depends linearly on the illuminated position. The sensitivity of the LPE can be modified by the bias current. The LaTiO3＋δ film shows a stable photoelectric property under the high pressure, up to 9 MPa. These results indicate that the LaTiO3＋δ films can give rise to a potentially photoelectronic device for near-infrared position-sensitive detection in high-pressure environments.
