Gd_(0.67)Ca_(0.33)MnO_3(GCMO)thin films grown by laser ablation on SrTiO_3(100)(STO)substrates was studied. Films are highly crystallized, very well epitaxial and single-phased. The ordering magnetic temperature(T_c)o...Gd_(0.67)Ca_(0.33)MnO_3(GCMO)thin films grown by laser ablation on SrTiO_3(100)(STO)substrates was studied. Films are highly crystallized, very well epitaxial and single-phased. The ordering magnetic temperature(T_c)of the films is much higher than the value of bulk samples of similar composition. It is found that the GCMO film exhibits a reversal of its magnetization at low temperature when cooled under a magnetic field. The negative magnetization is a consequence of the rapid increase(～1/T)with decreasing temperature of the magnetization of a sublattice aligned antiparallel to the local field, relative to the magnetic contribution of a second sublattice which is aligned parallel to the applied field.展开更多
Structure model of charge-ordered La_0.33 Ca_0.67 MnO_3, perovskite is one of current focused study in condensed matter physics. There are great discrepancies in previous studies in this field. Our transmission electr...Structure model of charge-ordered La_0.33 Ca_0.67 MnO_3, perovskite is one of current focused study in condensed matter physics. There are great discrepancies in previous studies in this field. Our transmission electron microscopy study confirms Wigner crystal model with transverse displacement and is not consisent with the hi-stripe model with longitudinal displacement. We observed incommensurate modulation and anti-phase domains with a displacement vector a_co/3 in charge--ordered La_0.33 Ca_0.67 MnO_3, perovskite.展开更多
The effects of Al ion doping on the Mn site were studied for the colossal magnetoresistance material La_(0.67)Ca_(0.33)MnO_3. It is found that the volume of the crystal cell decreases monotonically when the population...The effects of Al ion doping on the Mn site were studied for the colossal magnetoresistance material La_(0.67)Ca_(0.33)MnO_3. It is found that the volume of the crystal cell decreases monotonically when the population of Al^(3+) increases across the entire doping range. As the Al^(3+) population increases, the resistance of the material rises rapidly, while the insulator-metal transition temperature T_(IM) decreases linearly. At small Al^(3+) dosage, a thermal activation model properly describes the transport properties at T>T_(IM), while a metallic model is more suitable at T<T_(IM). The variation of transport properties with the change of Al dosage may be attributed to lattice distortion caused by the destruction of Mn^(3+)-O^(2-)-Mn^(4+) double exchange channel as a result of Al^(3+)-doping. The doped Al^(3+) ions may modify the local field for electrons so to affect the transport properties.展开更多
With substitution of La by Tb in (La_(1-x)Tb_x)_(0.67)Sr_(0.33)MnO_3, the room temperature magnetoresistance △R/R_0drops at first, then undergoes an increase near x≈0.1, and finally drops again. The value of room te...With substitution of La by Tb in (La_(1-x)Tb_x)_(0.67)Sr_(0.33)MnO_3, the room temperature magnetoresistance △R/R_0drops at first, then undergoes an increase near x≈0.1, and finally drops again. The value of room temperaturemagnetoresistance at a field H=12 kOe for (La_(0.9)Tb_(0.1))_(0.67)Sr_(0.33)MnO_3 is -3.56%. The enhancement of the roomtemperature magnetoresistance induced by an appropriate Tb substitution in (La_(1-x)Tb_x)_(0.67)Sr_(0.33)MnO_3 is correlatedwith the shifts of the Curie temperature and metal-insulator temperature to near room temperature. The drop ofthe room temperature magnetoresistance at large Tb doping-contents may be due to its lower T_C and T_(MI) far fromthe room temperature.展开更多
The La0.67Sr0.33MnO3 +δ/Pr0.7Ca0.3MnO3 +δ/La0.67Sr0.33MnO3 +δ(LPL) trilayered films on (100)LaA-1O3 substrates are prepared by using direct current (DC) magnetron sputtering method. The results obtained by means of...The La0.67Sr0.33MnO3 +δ/Pr0.7Ca0.3MnO3 +δ/La0.67Sr0.33MnO3 +δ(LPL) trilayered films on (100)LaA-1O3 substrates are prepared by using direct current (DC) magnetron sputtering method. The results obtained by means of X-ray powder diffractometer show that all films are the high quality epitaxial films. The results gained by SQUID magnetometer indicate that there is a magnetic coupling in the LPL trilayered films. The resistivities of LSMO, PC-MO and LPL films are measured using standard four-probe method and analyzed log ρ/T curve. From the results it is concluded that the middle-layered PCMO which is ferromagnetic may play a role of intra-magnetic field, which weakens the paramagnetism of LSMO film, lowers ρmax and enlarges Tp which is the transition temperature from metal to insulator, just as the applied magnetic field does. And the middle-layered PCMO may induce the change of the density of states in the LSMO' s gap. The two reasons above make the resistivity and Tp of the samples in zero field change with the thickness of PCMO layers.展开更多
THE colossal magnetoresistance (CMR) effects in doped perovskite-like oxide have stimulatedconsiderable attention to the study of fundamental physics and the application of new type ma-terials. It was reported that a ...THE colossal magnetoresistance (CMR) effects in doped perovskite-like oxide have stimulatedconsiderable attention to the study of fundamental physics and the application of new type ma-terials. It was reported that a large CMR effect and a high critical temperature T_c shown展开更多
Magnetoresistanoe in the temperature region from 300 K to liquid helium temperature has been measured on good (100) oriented La2/3Ca1/3MnO2 thin films prepared by d.c. magnetron sputtering on ZrO2 (100) substrates. It...Magnetoresistanoe in the temperature region from 300 K to liquid helium temperature has been measured on good (100) oriented La2/3Ca1/3MnO2 thin films prepared by d.c. magnetron sputtering on ZrO2 (100) substrates. It is found that there appears a resistance peak at about TP = 72K at zero magnetic field, and this peak moves to higher temperature with increasing field H, and R decreases simultaneously. However, the magnetoresistance ratio MR = 5R /R (H) = (Ro~ RH) /RH has a different temperature dependence. There are also MR peaks, but the temperature of maximum MR is at about 25 K which does not change with changing external magnetic field. The heat treatment (annealed at 700C in 105’Pa O2 for 30min) will make R reduce dramatically and has an effect on the temperature dependence of R and its MR.展开更多
Epitaxial La2/3Ca1/3 MnO3 thin films were prepared on NdGaO3(110) substrates by d. c. magnetron sputtering method. The measurements of magnetoresistance ρ(H) upon magnetic field at different temperatures were carried...Epitaxial La2/3Ca1/3 MnO3 thin films were prepared on NdGaO3(110) substrates by d. c. magnetron sputtering method. The measurements of magnetoresistance ρ(H) upon magnetic field at different temperatures were carried out in the field range of 0 - 8 T. It is found that p(H) obeys the following relations: when the temperature(T) is higher than the Curie temperature Tc, ρ ( H ) =1/α(T)+β(T)H2; below Tc, ρ ( H ) = ρ0 ( T ) 1/A(T)+B(T)exp(H/C(Y)),and ρ(H) =1/κa(T)+γ(T)H when T is far below TC. It is Suggested that the negative magnetoresistive effect is mainly due to enhancement of the magnetoconductance.展开更多
SINCE Jin et al. discovered the surprising giant magnetoresistance （GMR） effects in oxide films, the GMR oxide materials have attracted much attention. The cause of the GMR effects has been understood on the basis o...SINCE Jin et al. discovered the surprising giant magnetoresistance （GMR） effects in oxide films, the GMR oxide materials have attracted much attention. The cause of the GMR effects has been understood on the basis of mixed valences of manganese ion. Therefore, pairs of Mn<sup>3+</sup> and Mn<sup>4+</sup> can be controlled by oxygen behavior, which affects the magnetic and electnc properties of those materials. Some researchers have experimentally shown that展开更多
文摘Gd_(0.67)Ca_(0.33)MnO_3(GCMO)thin films grown by laser ablation on SrTiO_3(100)(STO)substrates was studied. Films are highly crystallized, very well epitaxial and single-phased. The ordering magnetic temperature(T_c)of the films is much higher than the value of bulk samples of similar composition. It is found that the GCMO film exhibits a reversal of its magnetization at low temperature when cooled under a magnetic field. The negative magnetization is a consequence of the rapid increase(～1/T)with decreasing temperature of the magnetization of a sublattice aligned antiparallel to the local field, relative to the magnetic contribution of a second sublattice which is aligned parallel to the applied field.
文摘Structure model of charge-ordered La_0.33 Ca_0.67 MnO_3, perovskite is one of current focused study in condensed matter physics. There are great discrepancies in previous studies in this field. Our transmission electron microscopy study confirms Wigner crystal model with transverse displacement and is not consisent with the hi-stripe model with longitudinal displacement. We observed incommensurate modulation and anti-phase domains with a displacement vector a_co/3 in charge--ordered La_0.33 Ca_0.67 MnO_3, perovskite.
文摘The effects of Al ion doping on the Mn site were studied for the colossal magnetoresistance material La_(0.67)Ca_(0.33)MnO_3. It is found that the volume of the crystal cell decreases monotonically when the population of Al^(3+) increases across the entire doping range. As the Al^(3+) population increases, the resistance of the material rises rapidly, while the insulator-metal transition temperature T_(IM) decreases linearly. At small Al^(3+) dosage, a thermal activation model properly describes the transport properties at T>T_(IM), while a metallic model is more suitable at T<T_(IM). The variation of transport properties with the change of Al dosage may be attributed to lattice distortion caused by the destruction of Mn^(3+)-O^(2-)-Mn^(4+) double exchange channel as a result of Al^(3+)-doping. The doped Al^(3+) ions may modify the local field for electrons so to affect the transport properties.
文摘With substitution of La by Tb in (La_(1-x)Tb_x)_(0.67)Sr_(0.33)MnO_3, the room temperature magnetoresistance △R/R_0drops at first, then undergoes an increase near x≈0.1, and finally drops again. The value of room temperaturemagnetoresistance at a field H=12 kOe for (La_(0.9)Tb_(0.1))_(0.67)Sr_(0.33)MnO_3 is -3.56%. The enhancement of the roomtemperature magnetoresistance induced by an appropriate Tb substitution in (La_(1-x)Tb_x)_(0.67)Sr_(0.33)MnO_3 is correlatedwith the shifts of the Curie temperature and metal-insulator temperature to near room temperature. The drop ofthe room temperature magnetoresistance at large Tb doping-contents may be due to its lower T_C and T_(MI) far fromthe room temperature.
基金supported by Beijing Natural Science Foundation(Z190010)the National Key Basic Research Program of China(2017YFA0303604,2019YFA0308500)+4 种基金the Key research projects of Frontier Science of Chinese Academy of Sciences(QYZDB-SSW-JSC035)the Youth Innovation Promotion Association of CAS(2018008)the National Natural Science Foundation of China(51672307,51991344,52025025,52072400,12074416,12074434,52250402)China National Postdoctoral Program for Innovative Talents(BX20220166)China Postdoctoral Science Foundation(2023M731863)。
基金Project supported by the Chinese Academy of Sciences the Foundation of State ScienceTechnology Commission of China
文摘The La0.67Sr0.33MnO3 +δ/Pr0.7Ca0.3MnO3 +δ/La0.67Sr0.33MnO3 +δ(LPL) trilayered films on (100)LaA-1O3 substrates are prepared by using direct current (DC) magnetron sputtering method. The results obtained by means of X-ray powder diffractometer show that all films are the high quality epitaxial films. The results gained by SQUID magnetometer indicate that there is a magnetic coupling in the LPL trilayered films. The resistivities of LSMO, PC-MO and LPL films are measured using standard four-probe method and analyzed log ρ/T curve. From the results it is concluded that the middle-layered PCMO which is ferromagnetic may play a role of intra-magnetic field, which weakens the paramagnetism of LSMO film, lowers ρmax and enlarges Tp which is the transition temperature from metal to insulator, just as the applied magnetic field does. And the middle-layered PCMO may induce the change of the density of states in the LSMO' s gap. The two reasons above make the resistivity and Tp of the samples in zero field change with the thickness of PCMO layers.
文摘THE colossal magnetoresistance (CMR) effects in doped perovskite-like oxide have stimulatedconsiderable attention to the study of fundamental physics and the application of new type ma-terials. It was reported that a large CMR effect and a high critical temperature T_c shown
基金supported by the National Natural Science Foundation of China.
文摘Magnetoresistanoe in the temperature region from 300 K to liquid helium temperature has been measured on good (100) oriented La2/3Ca1/3MnO2 thin films prepared by d.c. magnetron sputtering on ZrO2 (100) substrates. It is found that there appears a resistance peak at about TP = 72K at zero magnetic field, and this peak moves to higher temperature with increasing field H, and R decreases simultaneously. However, the magnetoresistance ratio MR = 5R /R (H) = (Ro~ RH) /RH has a different temperature dependence. There are also MR peaks, but the temperature of maximum MR is at about 25 K which does not change with changing external magnetic field. The heat treatment (annealed at 700C in 105’Pa O2 for 30min) will make R reduce dramatically and has an effect on the temperature dependence of R and its MR.
基金Project supported by the National Natural Science Foundation of China (Grant No. 19504012) the Chinese Academy of Sciences
文摘Epitaxial La2/3Ca1/3 MnO3 thin films were prepared on NdGaO3(110) substrates by d. c. magnetron sputtering method. The measurements of magnetoresistance ρ(H) upon magnetic field at different temperatures were carried out in the field range of 0 - 8 T. It is found that p(H) obeys the following relations: when the temperature(T) is higher than the Curie temperature Tc, ρ ( H ) =1/α(T)+β(T)H2; below Tc, ρ ( H ) = ρ0 ( T ) 1/A(T)+B(T)exp(H/C(Y)),and ρ(H) =1/κa(T)+γ(T)H when T is far below TC. It is Suggested that the negative magnetoresistive effect is mainly due to enhancement of the magnetoconductance.
文摘SINCE Jin et al. discovered the surprising giant magnetoresistance （GMR） effects in oxide films, the GMR oxide materials have attracted much attention. The cause of the GMR effects has been understood on the basis of mixed valences of manganese ion. Therefore, pairs of Mn<sup>3+</sup> and Mn<sup>4+</sup> can be controlled by oxygen behavior, which affects the magnetic and electnc properties of those materials. Some researchers have experimentally shown that
