The modification of the structure lanthanum orthoferrites(LaFeO_(3))to obtain ceramic materials with enhanced structural,optical,and electrical properties constitutes an active area of research.The preparation of La_(...The modification of the structure lanthanum orthoferrites(LaFeO_(3))to obtain ceramic materials with enhanced structural,optical,and electrical properties constitutes an active area of research.The preparation of La_(0.8)Pb_(0.2)(Fe,Ti)_(0.5)O_(3)(LPFTO)ceramic nanoparticles by following a cation substitution approach from LaFeO_(3)using sol–gel and sintering methods is described.The electrical and dielectric properties of the obtained material are investigated.The contribution of grain and grain boundary in the conduction mechanism is demonstrated by complex impedance analysis.The LPFTO ceramic nanoparticles exhibit a giant dielectric constant of the order of 108.The conductivity analysis suggests the occurrence of thermally activated semiconductor behavior.Moreover,the ferromagnetic–paramagnetic semiconductor transition temperature is observed at 385 K.The ac conductivity behavior satisfies the nonoverlapping small-polaron tunneling(NSPT)model.展开更多
基金support from the University of Indonesia under Grants No.NKB-0024/UN2.R3.1/HKP.05.00/2019.
文摘The modification of the structure lanthanum orthoferrites(LaFeO_(3))to obtain ceramic materials with enhanced structural,optical,and electrical properties constitutes an active area of research.The preparation of La_(0.8)Pb_(0.2)(Fe,Ti)_(0.5)O_(3)(LPFTO)ceramic nanoparticles by following a cation substitution approach from LaFeO_(3)using sol–gel and sintering methods is described.The electrical and dielectric properties of the obtained material are investigated.The contribution of grain and grain boundary in the conduction mechanism is demonstrated by complex impedance analysis.The LPFTO ceramic nanoparticles exhibit a giant dielectric constant of the order of 108.The conductivity analysis suggests the occurrence of thermally activated semiconductor behavior.Moreover,the ferromagnetic–paramagnetic semiconductor transition temperature is observed at 385 K.The ac conductivity behavior satisfies the nonoverlapping small-polaron tunneling(NSPT)model.
