Implementation of a DC-10Mb/s 0.5μm CMOS Laser Diode Driver

A DC-10Mb/s laser diode driver,compatible with TTL and CMOS levels,is presented. The optical power corresponding to‘1＇ and ‘0＇ can be set independently with resistors off-chip and stabilized with a closed loop. A novel peak-to- peak optical power monitor and stabilization mechanism is introduced. The circuit, fabricated in a CSMC 0. 5μm mixed signal CMOS process, can provide 120mA maximum drive current and 0. 6dB extinction ration fluctuation over - 20 ＋ 80℃ ,which is independent of input pattern.

0.6μm CMOS Laser Diode Driver for Optical Access Networks

Using native CMOS technology,EDA tool,and adopting full-custom design methodology,a laser diode driver for the use of STM-1 and STM-4 optical access network,is realized by CSMC-HJ 0.6μm CMOS technology to modulate laser diodes at 155Mb/s (STM-1),622Mb/s (STM-4) with adjustable modulation current from 0 to 50mA for an equivalent 50Ω load.The maximum modulation voltage is over 2.5V pp corresponding to a 3V DC bias for output stage.The time range of rise and fall from 360ps to 471ps is measured from the output voltage pulse.The RMS jitter is no more than 30ps for four bit rates.The power consumption is less than 410mW under a power supply voltage of 5V.According to the experimental results,the laser diode driver achieves the same level as their counterparts worldwide.

A 10 Gb/s laser diode driver in 0.35 μm SiGe BiCMOS technology

This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology. The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage. With the current mode logic （CML） structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data. By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate. The core circuit is operated under a 3. 3 V supply, while the output stage is operated under 5.5 V for sufficient headroom across the laser diode. The chip occupies a die area of 600 μm × 800μm. Measurements on chip show clear electrical eye diagrams over 10 Gb/s, which can well meet the specifications defined by SDH STM64/SONET OC192 and a 10 Gb/s Ethemet eye mask. Under a 5. 5 V supply voltage, the maximum output swing is 3.0 V with a 50 12 load （the corresponding modulation current is 60 mA）, and the total power dissipation is 660 mW.

A 15 Gbps-NRZ, 30 Gbps-PAM4, 120 mA laser diode driver implemented in 0.15-μm GaAs E-mode pHEMT technology

This paper presents the design and testing of a 15 Gbps non-return-to-zero(NRZ),30 Gbps 4-level pulse amplitude modulation(PAM4)configurable laser diode driver(LDD)implemented in 0.15-μm GaAs E-mode pHEMT technology.The driver bandwidth is enhanced by utilizing cross-coupled neutralization capacitors across the output stage.The output transmission-line back-termination,which absorbs signal reflections from the imperfectly matched load,is performed passively with on-chip 50-Ωresistors.The proposed 30 Gbps PAM4 LDD is implemented by combining two 15 Gbps-NRZ LDDs,as the high and low amplification paths,to generate PAM4 output current signal with levels of 0,40,80,and 120 mA when driving 25-Ωlasers.The high and low amplification paths can be used separately or simultaneously as a 15 Gbps-NRZ LDD.The measurement results show clear output eye diagrams at speeds of up to 15 and 30 Gbps for the NRZ and PAM4 drivers,respectively.At a maximum output current of 120 mA,the driver consumes 1.228 W from a single supply voltage of-5.2 V.The proposed driver shows a high current driving capability with a better output power to power dissipation ratio,which makes it suitable for driving high current distributed feedback(DFB)lasers.The chip occupies a total area of 0.7×1.3 mm^(2).

A 155 Mbps laser diode driver with automatic power and extinction ratio control

An integrated laser diode driver(LDD) driving an edge-emitting laser diode was designed and fabricated by 0.35 μm BiCMOS technology. This paper proposes a scheme which combines the automatic power control loop and temperature com-pensation for modulation current in order to maintain constant extinction ratio and average optical power. To implement tem-perature compensation for modulation current,a novel circuit which generates a PTAT current by using the injecting base current of a bipolar transistor in saturation region,and alternates the amplifier feedback loop(closed or not) to control the state of the current path is presented. Simulation results showed that programmed by choice of external resistors,the IC can provide modu-lation current from 5 mA to 85 mA with temperature compensation adjustments and independent bias current from 4 mA to 100 mA. Optical test results showed that clear eye-diagrams can be obtained at 155 Mbps,with the output optical power being nearly constant,and the variation of extinction ratio being lower than 0.7 dB.

Laser diode drive method with narrow-width and high-peak current for multi-line LIDAR

Light detection and ranging (LIDAR) based on time of flight (TOF) method is widely used in many fields related to distance measurement. LIDAR generally uses laser diode (LD) to emit the pulsed laser with high peak power and short duration to ensure a large distance measurement range and eye safety. To achieve this goal, we propose a pulsed LD drive method producing the drive current with high peak and narrow pulse width. We analyze the key issues and related theories of the drive current generation based on this method and design an LD driver. A model of drive current generation is established and the influence of operating frequency on drive current is discussed. The LD driver is simulated by software and verified by experiments. The working frequency of the driver changes from 20 kHz to 100 kHz and the charging voltage is set at 130 V. The current produced by this driver has a duration of 8.8 ns and a peak of about 35 A, and the peak output optical power of the LD exceeds 75 W.