The slip mechanism on the surface of silicon wafers under laser irradiation was studied by numerical simulations and experiments. Firstly, the slip was explained by an analysis of the generalized stacking fault energy...The slip mechanism on the surface of silicon wafers under laser irradiation was studied by numerical simulations and experiments. Firstly, the slip was explained by an analysis of the generalized stacking fault energy and the associated restoring forces. Activation of unexpected {110} slip planes was predicted to be a surface phenomenon. Experimentally,{110} slip planes were activated by changing doping concentrations of wafers and laser parameters respectively. Slip planes were {110} when slipping started within several atomic layers under the surface and turned into {111} with deeper slip.The scale effect was shown to be an intrinsic property of silicon.展开更多
Induced loss at 633 nm is tested in Yb3＋∕Al3＋co-doped silica fiber by a core pumped with a 974 nm laser and probed with a 633 nm laser. The fiber is prepared by the modified chemical vapor deposition method combine...Induced loss at 633 nm is tested in Yb3＋∕Al3＋co-doped silica fiber by a core pumped with a 974 nm laser and probed with a 633 nm laser. The fiber is prepared by the modified chemical vapor deposition method combined with solution doping. Different power scales of pump light and probe light are used in the tests. It is found that there is a dynamic equilibrium between photobleaching induced by 633 nm probe light and photodarkening（PD）induced by 974 nm pump light. For the first time to our knowledge, the effect of 633 nm probe laser power on an induced loss test of Yb3＋∕Al3＋co-doped silica fiber is studied quantitatively. It suggests that as long as the633 nm probe light power is less than 0.2 m W, the induced loss is mainly contributed by the PD effect of pumping light, and the deviation of induced loss is less than 5%.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61605079)
文摘The slip mechanism on the surface of silicon wafers under laser irradiation was studied by numerical simulations and experiments. Firstly, the slip was explained by an analysis of the generalized stacking fault energy and the associated restoring forces. Activation of unexpected {110} slip planes was predicted to be a surface phenomenon. Experimentally,{110} slip planes were activated by changing doping concentrations of wafers and laser parameters respectively. Slip planes were {110} when slipping started within several atomic layers under the surface and turned into {111} with deeper slip.The scale effect was shown to be an intrinsic property of silicon.
基金supported by the Young Scientists Fund of the National Natural Science Foundation of China(No.61405215)the Youth Innovation Promotion Associationthe Special Program for Advanced Electronic Materials of the Ministry of Science and Technology,China(No.2016YFB0402201)
文摘Induced loss at 633 nm is tested in Yb3＋∕Al3＋co-doped silica fiber by a core pumped with a 974 nm laser and probed with a 633 nm laser. The fiber is prepared by the modified chemical vapor deposition method combined with solution doping. Different power scales of pump light and probe light are used in the tests. It is found that there is a dynamic equilibrium between photobleaching induced by 633 nm probe light and photodarkening（PD）induced by 974 nm pump light. For the first time to our knowledge, the effect of 633 nm probe laser power on an induced loss test of Yb3＋∕Al3＋co-doped silica fiber is studied quantitatively. It suggests that as long as the633 nm probe light power is less than 0.2 m W, the induced loss is mainly contributed by the PD effect of pumping light, and the deviation of induced loss is less than 5%.
