The La0.85Sr0.015MnO3/Fe heterostructure deposited on Si （100） substrate was prepared by the magnetron sputtering. The laser-induced voltage in the sample and the difference in the voltage signals between the curre...The La0.85Sr0.015MnO3/Fe heterostructure deposited on Si （100） substrate was prepared by the magnetron sputtering. The laser-induced voltage in the sample and the difference in the voltage signals between the current-in-plane geometry and current-perpendicular-to-plane geometry at 77 K were investigated. This difference can be attributed to the different transport mechanisms.展开更多
基金The authors are thankful to the National Natural Science Foundation of China （Grant No. 50331040）NWPU Doctor Foundation for supporting this work.
文摘The La0.85Sr0.015MnO3/Fe heterostructure deposited on Si （100） substrate was prepared by the magnetron sputtering. The laser-induced voltage in the sample and the difference in the voltage signals between the current-in-plane geometry and current-perpendicular-to-plane geometry at 77 K were investigated. This difference can be attributed to the different transport mechanisms.
